Abstract: A method of modifying a boundary region (9) of a substrate (3) bounded by a surface (10), wherein an evacuated process chamber (2) is provided having a plasma source (4) for generating a directed plasma jet (5), and wherein furthermore a reactive component is supplied into the process chamber (2) with a flow of a predefined size, and wherein the substrate (3) is heated to a predefined reaction temperature, characterized in that the reactive component is diffusion-activated by the directed plasma jet (5) such that the reactive component diffuses into the boundary region (11) of the substrate (3) at a predefinable diffusion rate.

Abstract: A plasma coating plant for coating or treating the surface of a substrate having a work chamber which can be evacuated and into which the substrate can be placed, and having a plasma torch for generating a plasma jet by heating a process gas, wherein the plasma torch has a nozzle through which the plasma jet can exit the plasma torch and can extend along a longitudinal axis (A) into the work chamber, wherein a mechanical limiting apparatus is provided downstream of the nozzle in the work chamber, which mechanical limiting apparatus extends along the longitudinal axis (A) and protects the plasma jet against an unwanted lateral intrusion of particles. A corresponding method is also disclosed.

Abstract: The invention relates to a plasma spraying device (1) for spraying a coating (2) onto a substrate (3) by a thermal spray process. Said plasma spraying device (1) includes a plasma torch (4) for heating up a plasma gas (5) in a heating zone (6), wherein the plasma torch (4) includes a nozzle body (7) for forming a plasma gas stream (8), and said plasma torch (4) has an aperture (9) running along a central longitudinal axis (10) through said nozzle body (7). The aperture (9) has an convergent section (11) with an inlet (12) for the plasma gas (5), a throat section (13) including a minimum cross-sectional area of the aperture, and a divergent section (14) with an outlet (15) for the plasma gas stream (8), wherein an introducing duct (16) is provided for introducing a liquid precursor (17) into the plasma gas stream (8). According to the invention a penetration means (18, 161, 181, 182) is provided to penetrate the liquid precursor (17) inside the plasma gas stream (8).

Abstract: For the coating and for the surface treatment of substrates by means of a plasma beam a working chamber (2) with a plasma torch (4) is made available, a plasma beam (5) is produced in that a plasma gas is directed through the plasma torch (4) and is heated in the same by means of electrical gas discharge, electromagnetic induction or microwaves, and the plasma beam (5) is directed onto a substrate (3) introduced into the working chamber, wherein the plasma torch (4) which is made available has a power for the thermal plasma spraying of solid material particles. During the coating and/or the surface treatment, the pressure in the working chamber (2) amounts to between 0.01 and 10 mbar, and at least one reactive component in liquid or gaseous form is injected into the plasma beam (5) in order to coat the surface of a substrate (3) or to treat it.

Abstract: A semi-conducting device has at least one layer doped with a doping agent and a layer of another type deposited on the doped layer in a single reaction chamber. An operation for avoiding the contamination of the other layer by the doping agent separates the steps of depositing each of the layers.

Abstract: A semi-conducting device has at least one layer doped with a doping agent and a layer of another type deposited on the doped layer in a single reaction chamber. An operation for avoiding the contamination of the other layer by the doping agent separates the steps of depositing each of the layers.

Abstract: A semi-conducting device has at least one layer doped with a doping agent and a layer of another type deposited on the doped layer in a single reaction chamber. An operation for avoiding the contamination of the other layer by the doping agent separates the steps of depositing each of the layers.

Abstract: A semi-conducting device has at least one layer doped with a doping agent and a layer of another type deposited on the doped layer in a single reaction chamber. An operation for avoiding the contamination of the other layer by the doping agent separates the steps of depositing each of the layers.

Abstract: The invention relates to a plasma spraying device (1) for spraying a coating (2) onto a substrate (3) by a thermal spray process. Said plasma spraying device (1) includes a plasma torch (4) for heating up a plasma gas (5) in a heating zone (6), wherein the plasma torch (4) includes a nozzle body (7) for forming a plasma gas stream (8), and said plasma torch (4) having an aperture (9) running along a central longitudinal axis (10) through said nozzle body (7). The aperture (9) has an convergent section (11) with an inlet (12) for the plasma gas (5), a throat section (13) including a minimum cross-sectional area of the aperture, and a divergent section (14) with an outlet (15) for the plasma gas stream (8), wherein an introducing duct (16) is provided for introducing a liquid precursor (17) into the plasma gas stream (8). According to the invention a penetration means (18, 161, 181, 182) is provided to penetrate the liquid precursor (17) inside the plasma gas stream (8).

Abstract: A semi-conducting device has at least one layer doped with a doping agent and a layer of another type deposited on the doped layer in a single reaction chamber. An operation for avoiding the contamination of the other layer by the doping agent separates the steps of depositing each of the layers.

Abstract: Method for coating workpieces generates a beam of a plasma in an evacuated container. A region of highest plasma density is at the beam axis and workpieces having surfaces to be coated, are radially offset from, and extend along the axis with the surfaces facing the axis and being in the container. Fresh reactive gas is inlet into the container and consumed gas is removed from the container. Coating material is deposited upon the surfaces with a deposition rate of at least 400 nm/min and at a maximum temperature of the surfaces being 550° C.