Abstract: The present invention relates to a micromechanical HF switching element, in which a freestanding movable element is situated above a metallic surface on a substrate in such way that it is drawn to the metallic surface, to which a dielectric layer is applied, by applying an electrical voltage between the metallic surface and the movable element. The present invention also relates to a method for producing micromechanical HF switching elements of this type, in which the dielectric layer is deposited on the metal surface. The present method is distinguished in that a piezoelectric AlN layer having a columnar, polycrystalline structure and a texture is deposited on the metallic surface as the dielectric layer. Significantly reduced charging of the dielectric material and increased long-term stability of the switching element are achieved by the present method and the HF switching element thus produced.

Abstract: The present invention relates to a micromechanical HF switching element, in which a freestanding movable element (5) is situated above a metallic surface (2) on a substrate (1) in such way that it is drawn to the metallic surface (2), to which a dielectric layer (3) is applied, by applying an electrical voltage between the metallic surface (2) and the movable element (5). The present invention also relates to a method for producing micromechanical HF switching elements of this type, in which the dielectric layer (3) is deposited on the metallic surface (2). The present method is distinguished in that a piezoelectric AlN layer having a columnar, polycrystalline structure and a texture is deposited on the metallic surface (2) as the dielectric layer (3). Significantly reduced charging of the dielectric material and increased long-term stability of the switching element are achieved by the present method and the HF switching element thus produced.