Patents by Inventor Christoph Kamerow

Christoph Kamerow has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Light propagation time sensor with a charge compensation device
    Patent number: 10436883
    Abstract: The present invention provides a time-of-flight sensor (22) including at least one time-of-flight pixel (23) for demodulating a received modulated light beam (Sp2), wherein the time-of-flight pixel (23) comprises at least two integrating nodes (Ga, Gb) and the integration nodes (Ga, Gb) are connected to a device (500) for charge compensation, wherein the charge compensation device (500) comprises at least two SBI input transistors (M1, M2) which at a potential (Ua, Ub) of the integration nodes (Ga, Gb) which according to the amount exceeds an SBI threshold value (USBI) drive SBI current transistors (M3, M4) such that at both integration nodes (Ga, Gb) a compensating current (ik) of the same level flows, wherein the source terminals of the SBI-current transistors (M3, M4) are not connected to a supply voltage (UDD) but are connected to a working voltage (URES, Uarb) (FIG. 7).
    Type: Grant
    Filed: July 17, 2015
    Date of Patent: October 8, 2019
    Assignee: PMD Technologies AG
    Inventors: Michael Sommer, Jens Prima, Christoph Kamerow
  • LIGHT PROPAGATION TIME SENSOR WITH A CHARGE COMPENSATION DEVICE
    Publication number: 20170212225
    Abstract: The present invention provides a time-of-flight sensor (22) including at least one time-of-flight pixel (23) for demodulating a received modulated light beam (Sp2), wherein the time-of-flight pixel (23) comprises at least two integrating nodes (Ga, Gb) and the integration nodes (Ga, Gb) are connected to a device (500) for charge compensation, wherein the charge compensation device (500) comprises at least two SBI input transistors (M1, M2) which at a potential (Ua, Ub) of the integration nodes (Ga, Gb) which according to the amount exceeds an SBI threshold value (USBI) drive SBI current transistors (M3, M4) such that at both integration nodes (Ga, Gb) a compensating current (ik) of the same level flows, wherein the source terminals of the SBI-current transistors (M3, M4) are not connected to a supply voltage (UDD) but are connected to a working voltage (URES, Uarb) (FIG. 7).
    Type: Application
    Filed: July 17, 2015
    Publication date: July 27, 2017
    Applicant: PMD Technologies AG
    Inventors: Michael Sommer, Jens Prima, Christoph Kamerow