Abstract: A gallium arsenide substrate which exhibits at least one surface having a surface oxide layer comprising gallium and arsenic oxides and which exhibits at least one surface having, according to an ellipsometric lateral substrate mapping with an optical surface analyzer, based on a substrate diameter of 150 mm as reference, a defect number of <6000 and/or a total defect area of less than 2 cm2, wherein a defect is defined as a continuous area of greater than 1000 ?m2 having a deviation from the average measurement signal in elipsometric lateral substrate mapping with an optical surface analyzer of at least ±0.05%.

Abstract: The invention relates to an elutriation chamber for an elutriator system for washing and/or isolating cells, in particular thrombocytes, which elutriation chamber comprises a feed line (1) for an aqueous medium containing the cells to be washed and/or to be isolated in suspended form, and a discharge line (2) for the washed and/or isolated cells, wherein the chamber (5) is rotationally symmetrical to the axis (a), characterized in that the ratio of the area of the section through the lumen of the chamber (5) perpendicular to the axis (a) at the widest point (5a-5b) to the area of the section (1a) through the feed line (1) is in the range of 1,000 to 250,000.

Abstract: The present invention relates to a liquid-phase method for doping a semiconductor substrate, characterized in that a first composition containing at least one first dopant is applied to one or more regions of the surface of the semiconductor substrate, in order to create one or more region(s) of the surface of the semiconductor substrate coated with the first composition; a second composition containing at least one second dopant is applied to one or more regions of the surface of the semiconductor substrate, in order to create one or more region(s) of the surface of the semiconductor substrate coated with the second composition, where the one or more region(s) coated with the first composition and the one or more region(s) coated with the second composition are different and do not overlap significantly and where the first dopant is an n-type dopant and the second dopant is a p-type dopant or vice versa; the regions of the surface of the semiconductor substrate coated with the first composition and with the

Abstract: The present invention relates to a liquid-phase process for producing structured silicon- and/or germanium-containing coatings by the application to a substrate of at least one coating composition, the partial activation of the resulting coating on the coated substrate, and oxidation of non-activated coating on the substrate, to the coats produced by the process and to their use.

Abstract: The present invention relates to a method for producing highly doped polycrystalline semiconductor layers on a semiconductor substrate, wherein a first Si precursor composition comprising at least one first dopant is applied to one or more regions of the surface of the semiconductor substrate; optionally a second Si precursor composition comprising at least one second dopant is applied to one or more other regions of the surface of the semiconductor substrate, where the first dopant is an n-type dopant and the second dopant is a p-type dopant or vice versa; and the coated regions of the surface of the semiconductor substrate are each converted, so as to form polycrystalline silicon from the Si precursor. The invention further relates to the semiconductor obtainable by the method and to the use thereof, especially in the production of solar cells.

Abstract: The present invention relates to a liquid-phase method for doping a semiconductor substrate, characterized in that a first composition containing at least one first dopant is applied to one or more regions of the surface of the semiconductor substrate, in order to create one or more region(s) of the surface of the semiconductor substrate coated with the first composition; a second composition containing at least one second dopant is applied to one or more regions of the surface of the semiconductor substrate, in order to create one or more region(s) of the surface of the semiconductor substrate coated with the second composition, where the one or more region(s) coated with the first composition and the one or more region(s) coated with the second composition are different and do not overlap significantly and where the first dopant is an n-type dopant and the second dopant is a p-type dopant or vice versa; the regions of the surface of the semiconductor substrate coated with the first composition and with the

Abstract: The present invention relates to a liquid-phase process for producing structured silicon- and/or germanium-containing coatings by the application to a substrate of at least one coating composition, the partial activation of the resulting coating on the coated substrate, and oxidation of non-activated coating on the substrate, to the coats produced by the process and to their use.

Abstract: The invention relates to an elutriation chamber for an elutriator system for washing and/or isolating cells, in particular thrombocytes, which elutriation chamber comprises a feed line (1) for an aqueous medium containing the cells to be washed and/or to be isolated in suspended form, and a discharge line (2) for the washed and/or isolated cells, wherein the chamber (5) is rotationally symmetrical to the axis (a), characterized in that the ratio of the area of the section through the lumen of the chamber (5) perpendicular to the axis (a) at the widest point (5a-5b) to the area of the section (1a) through the feed line (1) is in the range of 1,000 to 250,000.

Abstract: A compound body can be constructed, using secondary cell wall polymers of prokaryotic microorganisms as bonding agent to anchor a monomolecular lattice to a support, with or without functional groups attached to the lattice. The lattice may be comprised of lipid or crystalline cell surface layer proteins. The support is illustrated by a micro-filtration membrane, a cell surface ultra-filtration membrane (SUM), and a micelle, respectively.