Abstract: The present invention describes a method for determining a value for the temperature, radiation, emissivity, transmissivity and/or reflectivity of an object (2) such as a semiconductor wafer in a rapid heating system (1), wherein an output signal from a radiation detector (50) which records temperature radiation from the object is used as a measurement value, and wherein prediction values for the measurement values are calculated in a model system (100). The development over time of the measurement values is compared with the development over time of the prediction values and the measurement value is corrected if the difference exceeds predetermined threshold value.

Abstract: A system and method is disclosed that reliably determines the transmissivity of a substrate. By determining the transmissivity of a calibration substrate, for instance, a temperature measuring device can be calibrated. The method and system are particularly well suited for use in thermal processing chambers that process semiconductor wafers used for forming integrated circuit chips.

Abstract: The present invention describes a method for determining a value for the temperature, radiation, emissivity, transmissivity and/or reflectivity of an object (2) such as a semiconductor wafer in a rapid heating system (1), wherein an output signal from a radiation detector (50) which records temperature radiation from the object is used as a measurement value, and wherein prediction values for the measurement values are calculated in a model system (100). The development over time of the measurement values is compared with the development over time of the prediction values and the measurement value is corrected if the difference exceeds predetermined threshold value.

Abstract: A system and method is disclosed that reliably determines the transmissivity of a substrate. By determining the transmissivity of a calibration substrate, for instance, a temperature measuring device can be calibrated. The method and system are particularly well suited for use in thermal processing chambers that process semiconductor wafers used for forming integrated circuit chips.

Abstract: The invention relates to a process for determining at least one state variable from a model of an RTP system by means of at least one measurement signal measured on the RTP system—the measurement value—which has a dependency upon the state variable to be determined, and a measurement value forecast by means of the model—the forecast value—, whereby the measurement value and the forecast value respectively comprise components of a constant and a changeable portion, and whereby respectively at least the changeable portion is established, separated by a filter, so as to form a first difference between the changeable portion of the measurement value and the changeable portion of the measurement value forecast by the model, parameter adaptation of at least one model parameter by recirculation of the first difference in the model with the aim of adapting the model behavior to variable system parameters, forming of a second difference from the measurement value and the forecast value or from the measurement value ad

Abstract: A method of producing a calibration wafer having at least a predetermined emissivity, including providing a wafer of semiconductor material; subjecting the bulk material of the wafer to doping with foreign atoms and/or generating lattice defects to obtain the predetermined emissivity; and coating the wafer to obtain a further optical characteristic.

Abstract: The invention relates to a process for determining at least one state variable from a model of an RTP system by means of at least one measurement signal measured on the RTP system—the measurement value—which has a dependency upon the state variable to be determined, and a measurement value forecast by means of the model—the forecast value—, whereby the measurement value and the forecast value respectively comprise components of a constant and a changeable portion, and whereby respectively at least the changeable portion is established, separated by a filter, so as to form a first difference between the changeable portion of the measurement value and the changeable portion of the measurement value forecast by the model, parameter adaptation of at least one model parameter by recirculation of the first difference in the model with the aim of adapting the model behavior to variable system parameters, forming of a second difference from the measurement value and the forecast value or from the measurement value ad

Abstract: A method of producing a calibration wafer having at least a predetermined emissivity, including providing a wafer of semiconductor material; subjecting the bulk material of the wafer to doping with foreign atoms and/or generating lattice defects to obtain the predetermined emissivity; and coating the wafer to obtain a further optical characteristic.