Abstract: The present invention relates to a method for removing defect material in a transmissive region of a lithography mask having transmissive carrier material and absorber material. A first method step involves removing defective material and absorber material in a processing region. A second method step involves applying an absorbent material in an outer region, the outer region depending on the partial region of the processing region that was previously covered with absorber material.

Abstract: A single through-the-focus exposure of a semiconductor wafer is achieved by a lithographic projection apparatus, which has the capability of generating an exposure profile comprising substantially two separate portions, or maxima, of exposure light. Both portions of the light are directed to the mask, on which the pattern is formed. The mask is thus exposed coincidently, but on separately located surface positions. Two different patterned portions of the exposure light are then focused onto the wafer. In a preferred embodiment, the two portions are generated by means of a double slit. The exposure is combined with a continuous through-the-focus exposure, wherein a tilt is applied to the wafer stage.

Abstract: A photolithographic mask is based on a combination of a half-tone phase mask and an alternating phase mask such that when radiation passes through some of the openings, a phase difference is in each case produced between adjacent openings, and the surroundings of the openings are partly transmissive and shift the phase of the radiation. Consequently, the advantages of alternating phase masks and half-tone phase masks can be realized on one mask and, accordingly, significantly enlarged process windows for the actual lithography process result with the photolithographic mask. In particular, the advantages can be obtained with only one absorber material and the size of non-imaging auxiliary structures is approximately as large as the smallest main structure.

Abstract: A method for structuring photoresists and a corresponding photolithography mask utilize a principal structure and an auxiliary structure. In addition to the principal structure to be imaged, the photomask has an imaging auxiliary structure, which improves the imaging of the principal structure. The portions of the imaging auxiliary structure in the photoresist are exposed in a second exposure step and thereby likewise changed into a form that is soluble in a developer. Only the principal structure remains on the substrate after development.

Abstract: A photolithography mask is based on a combination of a half-tone phase mask and an alternating phase mask such that, when the radiation passes through some of the openings, a phase difference is in each case produced between adjacent openings, and the surroundings of the openings are partially transparent and shift the phase of the radiation. Consequently, the advantages of alternating phase masks and half-tone phase masks can be realized on one mask and, accordingly, significantly enlarged process windows for the actual lithography process result with the photolithography mask according to the invention. In particular, these advantages can be obtained with only one absorber material, and the size of non-imaging auxiliary structures is approximately as large as the smallest main structure. In addition, the invention provides methods for fabricating the photolithography masks according to the invention.

Abstract: The present invention relates to a method for producing a structure serving as an etching mask on the surface of a substrate. In this case, a first method involves forming a first partial structure on the surface of the substrate, which has structure elements that are arranged regularly and are spaced apart essentially identically. A second method involves forming spacers on the surface of the substrate, which adjoin sidewalls of the structure elements of the first partial structure, cutouts being provided between the spacers. A third method step involves introducing filling material into the cutouts between the spacers, a surface of the spacers being uncovered. A fourth method step involves removing the spacers in order to form a second partial structure having the filling material and having structure elements that are arranged regularly and are spaced apart essentially identically. The structure to be produced is composed of the first partial structure and the second partial structure.

Abstract: A photoresist layer on a substrate wafer is exposed in first sections with a first exposure radiation and in second sections with a second exposure radiation that is phase-shifted by 180°. The first and second sections adjoin one another in boundary regions in which the photoresist layer is artificially not sufficiently exposed. Where a distance between these boundary regions is smaller than a photolithographically critical, least distance, the photoresist layer is exposed, at a first boundary region, with a third exposure radiation and at a second boundary region with a fourth exposure radiation phase-shifted by 180°. A trim mask provided for the process has a first translucent region and a second translucent region. The first light-transparent region and the second light-transparent region are fashioned such that the light passing through the first light-transparent region and the light passing through the second light-transparent region has a phase displacement of 180°.

Abstract: An alternating phase mask is described in which a propagation of a T phase conflict which occurs in the case of a T pattern structure is avoided by producing a phase jump at one of the 90° corners of the T pattern structure. First and second transparent area segments, which produce a mutual phase difference of 180°, are separated by a narrow slot running approximately at 45° toward the corner of the T pattern structure. The structure containing the transparent area segments, which are separated by the slot running at 45°, can also be provided at the other corner of the T structure providing a solution for each T conflict. The trimming mask for eliminating the dark line artificially produced by the 180° phase jump is a conventional mask and requires no additional coloration. Moreover, alignment errors are minimal on account of the small number of trimming openings.

Abstract: During the operation of a steam turbine installation (1), flue gas (RG) produced by combusting a fossil fuel (B) is firstly guided in a high-temperature heat exchanger (3) while exchanging heat with water vapor (WD) which flows in the water-steam circuit (6) of a steam turbine (7) and which is fed to the steam turbine (7) as fresh steam (FD) having a fresh steam temperature (TFD) of preferably greater than 800 ° C. The flue gas (RG) that is cooled down in the high-temperature heat exchanger (3) is subsequently guided in a waste heat stem generator (4) while exchanging heat with feed water (SW), which flows in the water-steam circuit, whereupon inducing the production of water vapor (WD).

Abstract: A carrier has a surface with a mask layer thereon. An irradiation-sensitive layer on the mask layer is exposed and developed to form a first exposure structure. The first exposure structure is used as an etching mask while the mask layer is etched. The first exposure structure is subsequently removed. A second irradiation-sensitive layer is applied to the mask layer and the carrier. The second irradiation-sensitive layer is exposed with a first exposure dose and a second exposure dose. The second irradiation-sensitive layer is subsequently developed to form a second exposure structure with a first and second exposure structure thickness. The carrier is etched down to a first etching depth in the region of the first exposure structure thickness and down to a second etching depth in the region of the second exposure structure thickness. The first etching depth is larger than the second etching depth.

Abstract: A photolithography mask is based on a combination of a half-tone phase mask and an alternating phase mask such that, when the radiation passes through some of the openings, a phase difference is in each case produced between adjacent openings, and the surroundings of the openings are partially transparent and shift the phase of the radiation. Consequently, the advantages of alternating phase masks and half-tone phase masks can be realized on one mask and, accordingly, significantly enlarged process windows for the actual lithography process result with the photolithography mask according to the invention. In particular, these advantages can be obtained with only one absorber material, and the size of non-imaging auxiliary structures is approximately as large as the smallest main structure. In addition, the invention provides methods for fabricating the photolithography masks according to the invention.

Abstract: A high electric efficiency plant for generating electric energy is provided, comprising a module of high-temperature fuel cells with means for heating water steam, the heating means are connected with the steam feed of the steam turbine and a conduit for the feed of bleed steam from the steam turbine to a reformer. In such a plant, the module of high-temperature fuel cells generated thermal energy can be used to heat up water steam, which is relaxed in a steam turbine, before it is fed to the reformer.

Abstract: The invention relates to a method for operating a steam turbine (5, 5′) in which steam supplied as fresh steam (FD) that is expanded in order to effect work. According to the invention, the fresh steam (FD) is generated in a gas turbine (2, 2′) by heating cool steam (KD) that is supplied thereto. To this end, the steam turbine (5, 5′) that is cooled with the water vapor (WD) is connected on the inlet side to the steam-cooled gas turbine (2, 2′) via a fresh steam line (6, 6′) through which the heated cool steam (KD) is supplied as fresh steam (FD) from the gas turbine (2, 2′) to the steam turbine (5, 5′).

Abstract: A carrier of light-transmissive material has a mask pattern of light-absorbent material arranged thereon. The carrier comprises first regions and second regions that are not covered by the absorbent material. An optical thickness of the carrier in the first regions differs from an optical thickness in the second regions such that a phase difference of 180.degree..+-.60.degree. exists between light that has traversed the first regions and light that has traversed the second regions. For manufacturing the phase mask, the first regions are produced by isotropic etching of the light-absorbent material and the second regions are produced by anisotropic etching into the carrier.

Abstract: A carrier of light-transmissive material has a mask pattern of light-absorbent material arranged thereon. The carrier comprises first regions and second regions that are not covered by the absorbent material. An optical thickness of the carrier in the first regions differs from an optical thickness in the second regions such that a phase difference of 180.degree.+/-60.degree. exists between light that has traversed the first regions and light that has traversed the second regions. For manufacturing the phase mask, the first regions are produced by isotropic etching of the light-absorbent material and the second regions are produced by anisotropic etching into the carrier.