Abstract: In a method for producing an optical element for an EUV projection exposure apparatus, a shaping layer (221) is applied onto a substrate (20) so as to have a surface roughness of at most 0.5 nm rms directly after the application of the shaping layer onto the substrate.

Abstract: An optical element (1) includes: a substrate (2); applied to the substrate (2), a multilayer system (3) which reflects EUV radiation (4); and also applied to the multilayer system (3), a protective layer system (5) which comprises a first layer (5a), a second layer (5b) and a third, in particular topmost layer (5c), where the first layer (5a) is disposed closer to the multilayer system (3) than the second layer (5b), and where the second layer (5b) is disposed closer to the multilayer system (3) than the third layer (5c). The second layer (5b) and the third layer (5c) and also preferably the first layer (5a) each have a thickness (d2, d3, d1) of between 0.5 nm and 5.0 nm. A related EUV lithography system having at least one such optical element is also described.

Abstract: A cost-effective method for repairing reflective optical elements for EUV lithography. These optical elements (60) have a substrate (61) and a coating (62) that reflects at a working wavelength in the range between 5 nm and 20 nm and is damaged as a result of formation of hydrogen bubbles. The method includes: localizing a damaged area (63, 64, 65, 66) in the coating (62) and covering the damaged area (63, 64, 65, 66) with one or more materials having low hydrogen permeability by applying a cover element to the damaged area. The cover element is formed of a surface structure, a convex or concave surface, or a coating corresponding to the coating of the reflective optical element, or a combination thereof. The method is particularly suitable for collector mirrors (70) for EUV lithography. After the repair, the optical elements have cover elements (71, 72, 73).

Abstract: A reflective optical element for the extreme ultraviolet (EUV) wavelength range having a multi-layer system extending over an area on a substrate. The system includes layers (54, 55?) made of at least two different materials with different real parts of the refractive index in the EUV arranged alternately. A layer of one of the two materials forms a stack with the layer or layers arranged between this layer and the nearest layer of the same material with increasing distance from the substrate. In at least one stack (53?), the material of the layer (55?) with the lower real part of the refractive index and/or the material of the layer (54) with the larger real part of the refractive index is a combination (551, 552) made of at least two substances.

Abstract: A mirror element, in particular for a microlithographic projection exposure apparatus. According to one aspect, the mirror element includes a substrate (111, 112, 113, 114, 115, 211, 212, 213, 311a-311m, 411, 412, 413) and a layer stack (121, 122, 123, 124, 125, 221, 222, 223, 321a-321m, 421, 422, 423) on the substrate. The layer stack has at least one reflection layer system, wherein a curvature of the mirror element is generated on the basis of a setpoint curvature for a predetermined operating temperature by a non-vanishing bending force exerted by the layer stack, wherein the generated curvature varies by no more than 10% over a temperature interval (?T) of at least 10 K.

Abstract: A cost-effective method for repairing reflective optical elements for EUV lithography. These optical elements (60) have a substrate (61) and a coating (62) that reflects at a working wavelength in the range between 5 nm and 20 nm and is damaged as a result of formation of hydrogen bubbles. The method includes: localizing a damaged area (63, 64, 65, 66) in the coating (62) and covering the damaged area (63, 64, 65, 66) with one or more materials having low hydrogen permeability by applying a cover element to the damaged area. The cover element is formed of a surface structure, a convex or concave surface, or a coating corresponding to the coating of the reflective optical element, or a combination thereof. The method is particularly suitable for collector mirrors (70) for EUV lithography. After the repair, the optical elements have cover elements (71, 72, 73).

Abstract: A reflective optical element for the extreme ultraviolet (EUV) wavelength range having a multi-layer system extending over an area on a substrate. The system includes layers (54, 55?) made of at least two different materials with different real parts of the refractive index in the EUV arranged alternately. A layer of one of the two materials forms a stack with the layer or layers arranged between this layer and the nearest layer of the same material with increasing distance from the substrate. In at least one stack (53?), the material of the layer (55?) with the lower real part of the refractive index and/or the material of the layer (54) with the larger real part of the refractive index is a combination (551, 552) made of at least two substances.

Abstract: A mirror element, in particular for a microlithographic projection exposure apparatus. According to one aspect, the mirror element includes a substrate (111, 112, 113, 114, 115, 211, 212, 213, 311a-311m, 411, 412, 413) and a layer stack (121, 122, 123, 124, 125, 221, 222, 223, 321a-321m, 421, 422, 423) on the substrate. The layer stack has at least one reflection layer system, wherein a curvature of the mirror element is generated on the basis of a setpoint curvature for a predetermined operating temperature by a non-vanishing bending force exerted by the layer stack, wherein the generated curvature varies by no more than 10% over a temperature interval (?T) of at least 10 K.

Abstract: A mirror element, in particular for a microlithographic projection exposure apparatus. According to one aspect, the mirror element includes a substrate (111, 112, 113, 114, 115, 211, 212, 213, 311a-311m, 411, 412, 413) and a layer stack (121, 122, 123, 124, 125, 221, 222, 223, 321a-321m, 421, 422, 423) on the substrate. The layer stack has at least one reflection layer system, wherein a curvature of the mirror element is generated on the basis of a setpoint curvature for a predetermined operating temperature by a non-vanishing bending force exerted by the layer stack, wherein the generated curvature varies by no more than 10% over a temperature interval (?T) of at least 10 K.

Abstract: The invention relates to a method for transferring a nano-layer (1) from a first substrate (5, 105) to a second substrate (30, 130), wherein the nano-layer (1) comprises a self-aggregating monolayer with cross-linked phenyl units and/or a mono-atomic graphite layer (graphene), wherein the method comprises the following steps: a. applying a transfer medium (20, 120) onto nano-layer (1), wherein in this step or afterwards the transfer medium (20, 120) is transformed from a liquid or gaseous phase in a solid phase; b. separating the transfer medium (20, 120) and the nano-layer (1) from the first substrate (5, 105); and c. applying the transfer medium (20, 120) and the nano-layer (1) onto the second substrate (30, 130); and d. removing the transfer medium (20, 120).

Abstract: The invention relates to a method for transferring a nano-layer (1) from a first substrate (5, 105) to a second substrate (30, 130), wherein the nano-layer (1) comprises a self-aggregating monolayer with cross-linked phenyl units and/or a mono-atomic graphite layer (graphene), wherein the method comprises the following steps: a. applying a transfer medium (20, 120) onto nano-layer (1), wherein in this step or afterwards the transfer medium (20, 120) is transformed from a liquid or gaseous phase in a solid phase; b. separating the transfer medium (20, 120) and the nano-layer (1) from the first substrate (5, 105); and c. applying the transfer medium (20, 120) and the nano-layer (1) onto the second substrate (30, 130); and d. removing the transfer medium (20, 120).