Patents by Inventor Christoph Rene Konrad Cebulla HENNERKES

Christoph Rene Konrad Cebulla HENNERKES has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Wavefront optimization for tuning scanner based on performance matching
    Patent number: 11977334
    Abstract: A method for determining a wavefront parameter of a patterning process. The method includes obtaining a reference performance (e.g., a contour, EPE, CD) of a reference apparatus (e.g., a scanner), a lens model for a patterning apparatus configured to convert a wavefront parameter of a wavefront to actuator movement, and a lens fingerprint of a tuning apparatus (e.g., a to-be-matched scanner). Further, the method involves determining the wavefront parameter (e.g., a wavefront parameter such as tilt, offset, etc.) based on the lens fingerprint of the tuning apparatus, the lens model, and a cost function, wherein the cost function is a difference between the reference performance and a tuning apparatus performance.
    Type: Grant
    Filed: December 28, 2022
    Date of Patent: May 7, 2024
    Assignee: ASML NETHERLANDS B.V.
    Inventors: Duan-Fu Stephen Hsu, Christoph Rene Konrad Cebulla Hennerkes, Rafael C. Howell, Zhan Shi, Xiaoyang Jason Li, Frank Staals
  • Methods and patterning devices and apparatuses for measuring focus performance of a lithographic apparatus, device manufacturing method
    Patent number: 11733615
    Abstract: Disclosed is a method for selecting a structure for focus monitoring. The method comprises: simulating a Bossung response with focus of a focus dependent parameter, for one or more different structures; and selecting a structure for focus monitoring in a manufacturing process based on the results of said simulating step. The simulating step may be performed using a computational lithography simulation.
    Type: Grant
    Filed: December 5, 2019
    Date of Patent: August 22, 2023
    Assignee: ASML Netherlands B.V.
    Inventors: Frank Staals, Christoph Rene Konrad Cebulla Hennerkes
  • WAVEFRONT OPTIMIZATION FOR TUNING SCANNER BASED ON PERFORMANCE MATCHING
    Publication number: 20230161264
    Abstract: A method for determining a wavefront parameter of a patterning process. The method includes obtaining a reference performance (e.g., a contour, EPE, CD) of a reference apparatus (e.g., a scanner), a lens model for a patterning apparatus configured to convert a wavefront parameter of a wavefront to actuator movement, and a lens fingerprint of a tuning apparatus (e.g., a to-be-matched scanner). Further, the method involves determining the wavefront parameter (e.g., a wavefront parameter such as tilt, offset, etc.) based on the lens fingerprint of the tuning apparatus, the lens model, and a cost function, wherein the cost function is a difference between the reference performance and a tuning apparatus performance.
    Type: Application
    Filed: December 28, 2022
    Publication date: May 25, 2023
    Applicant: ASML NETHERLANDS B.V.
    Inventors: Duan-Fu Stephen HSU, Christoph Rene Konrad Cebulla Hennerkes, Rafael C. Howell, Zhan Shi, Xiaoyang Jason Li, Frank Staals
  • Wavefront optimization for tuning scanner based on performance matching
    Patent number: 11586114
    Abstract: A method for determining a wavefront parameter of a patterning process. The method includes obtaining a reference performance (e.g., a contour, EPE, CD) of a reference apparatus (e.g., a scanner), a lens model for a patterning apparatus configured to convert a wavefront parameter of a wavefront to actuator movement, and a lens fingerprint of a tuning apparatus (e.g., a to-be-matched scanner). Further, the method involves determining the wavefront parameter (e.g., a wavefront parameter such as tilt, offset, etc.) based on the lens fingerprint of the tuning apparatus, the lens model, and a cost function, wherein the cost function is a difference between the reference performance and a tuning apparatus performance.
    Type: Grant
    Filed: June 21, 2019
    Date of Patent: February 21, 2023
    Assignee: ASML Netherlands B.V.
    Inventors: Duan-Fu Stephen Hsu, Christoph Rene Konrad Cebulla Hennerkes, Rafael C. Howell, Zhan Shi, Xiaoyang Jason Li, Frank Staals
  • Patterning process improvement involving optical aberration
    Patent number: 11422472
    Abstract: A method involving: obtaining a process model of a patterning process that includes or accounts for an average optical aberration of optical systems of a plurality of apparatuses for use with a patterning process; and applying the process model to determine an adjustment to a parameter of the patterning process to account for the average optical aberration.
    Type: Grant
    Filed: December 17, 2018
    Date of Patent: August 23, 2022
    Assignee: ASML Netherlands B.V.
    Inventors: Paulus Jacobus Maria Van Adrichem, Ahmad Wasiem Ibrahim El-Said, Christoph Rene Konrad Cebulla Hennerkes, Johannes Christiaan Maria Jasper
  • WAVEFRONT OPTIMIZATION FOR TUNING SCANNER BASED ON PERFORMANCE MATCHING
    Publication number: 20210364929
    Abstract: A method for determining a wavefront parameter of a patterning process. The method includes obtaining a reference performance (e.g., a contour, EPE, CD) of a reference apparatus (e.g., a scanner), a lens model for a patterning apparatus configured to convert a wavefront parameter of a wavefront to actuator movement, and a lens fingerprint of a tuning apparatus (e.g., a to-be-matched scanner). Further, the method involves determining the wavefront parameter (e.g., a wavefront parameter such as tilt, offset, etc.) based on the lens fingerprint of the tuning apparatus, the lens model, and a cost function, wherein the cost function is a difference between the reference performance and a tuning apparatus performance.
    Type: Application
    Filed: June 21, 2019
    Publication date: November 25, 2021
    Applicant: ASML NETHERLANDS B.V.
    Inventors: Duan-Fu Stephen HSU, Christoph Rene Konrad Cebulla HENNERKES, Rafael C. HOWELL, Zhan SHI, Xiaoyang Jason LI, Frank STAALS
  • PATTERNING PROCESS IMPROVEMENT INVOLVING OPTICAL ABERRATION
    Publication number: 20210165332
    Abstract: A method involving: obtaining a process model of a patterning process that includes or accounts for an average optical aberration of optical systems of a plurality of apparatuses for use with a patterning process; and applying the process model to determine an adjustment to a parameter of the patterning process to account for the average optical aberration.
    Type: Application
    Filed: December 17, 2018
    Publication date: June 3, 2021
    Applicant: ASML NETHERLANDS B.V.
    Inventors: Paulus Jacobus Maria VAN ADRICHEM, Ahmad Wasiem Ibrahim EL-SAID, Christoph Rene Konrad Cebulla HENNERKES, Johannes Christiaan Maria JASPER