Abstract: Methods of recycling silicon swarf into electronic grade polysilicon or metallurgical-grade silicon are described herein are described. In an example, a method includes cutting a silicon ingot and recovering silicon swarf having a first purity from the cutting process. The recovered silicon is purified in an upgraded metallurgical silicon process to produce electronic grade polysilicon particles having a second purity higher than the first purity. The upgraded metallurgical silicon process can include dissolving the recovered silicon particles in a molten aluminum metal smelt.

Abstract: Methods of recycling silicon swarf into electronic grade polysilicon or metallurgical-grade silicon are described herein are described. In an example, a method includes cutting a silicon ingot and recovering silicon swarf having a first purity from the cutting process. The recovered silicon is purified in an upgraded metallurgical silicon process to produce electronic grade polysilicon particles having a second purity higher than the first purity. The upgraded metallurgical silicon process can include dissolving the recovered silicon particles in a molten aluminum metal smelt.

Abstract: The invention relates to a photovoltaic module comprising a front bonding layer to photovoltaic cells are attached, such that the front side of each photovoltaic cell is attached to the front bonding layer. The photovoltaic module further comprises an open container containing a dielectric heat transfer fluid. The container comprises a bottom wall and side walls wherein the front bonding layer is disposed on top of the open container in order to close the container such that at least part of the backside (6a) of each photovoltaic cell is in contact with the dielectric heat transfer fluid.

Abstract: Methods of recycling silicon swarf into electronic grade polysilicon or metallurgical-grade silicon are described herein are described. In an example, a method includes cutting a silicon ingot and recovering silicon swarf having a first purity from the cutting process. The recovered silicon is purified in an upgraded metallurgical silicon process to produce electronic grade polysilicon particles having a second purity higher than the first purity. The upgraded metallurgical silicon process can include dissolving the recovered silicon particles in a molten aluminum metal smelt.

Abstract: The present invention relates to a material comprising (i) an inner part comprising or consisting of bulk silicon, (ii) an outer part comprising or consisting of a silicon-based compound, said silicon-based compound comprising of silicon and a non-metal element, and (iii) clusters comprising or consisting of a transition metal. The present invention relates to preparation and applications of said material.

Abstract: Methods of recycling silicon swarf into electronic grade polysilicon or metallurgical-grade silicon are described herein are described. In an example, a method includes cutting a silicon ingot and recovering silicon swarf having a first purity from the cutting process. The recovered silicon is purified in an upgraded metallurgical silicon process to produce electronic grade polysilicon particles having a second purity higher than the first purity. The upgraded metallurgical silicon process can include dissolving the recovered silicon particles in a molten aluminum metal smelt.

Abstract: A method is provided for recycling sub-micron Si-particles from a Si wafer production process resulting from a diamond fixed abrasive process including slicing and cutting, the method including the steps of: providing a paste of sub-micron Si-particles resulting from the diamond fixed abrasive process; drying and shaping the paste of sub-micron Si-particles into a layer; and applying a zone melting step to the dried and shaped layer of Si-particles on a substrate.

Abstract: Silicon nitride particles are used as a coating or substrate material for kerfless wafer making technologies.

Abstract: A liner is placed into a crucible to prevent semiconductor material from contacting the interior surfaces of the crucible and to allow the crucible to be reused in the making of semiconductor ingots.