Patents by Inventor Christoph Schmelzer

Christoph Schmelzer has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method of making a magnetic memory layer
    Patent number: 4314894
    Abstract: A magnetic layer for storing information in the form of a fixed, two-dimensional array of magnetic domains. The magnetic layer can be magnetized in either of two opposite directions normal to the plane of the layer. The walls of the domains are fixed by local gradients in the value and direction of the magnetic anistropy and in the value and direction of the magnetic exchange energy of the magnetic layer. The local gradients may be caused by a relatively high defect density at the domain wall locations, by implanting ions into the magnetic layer at the locations of the domain walls thereby causing a local expansion of the crystal lattice of the layer, and/or by etching a multiplicity of nonconnected tapering channels in and substantially perpendicular to the plane of the magnetic layer at these locations. Where tapering channels are used, the magnetic layer is provided on a substrate such that the crystal lattice constant of the magnetic layer is different from the crystal lattice constant of the substrate.
    Type: Grant
    Filed: November 17, 1980
    Date of Patent: February 9, 1982
    Assignee: U.S. Philips Corporation
    Inventors: Christoph Schmelzer, Reimar Spohr, Jens-Peter Krumme, Klaus Witter, Heinrich Heitmann
  • Magnetic memory layer
    Patent number: 4274935
    Abstract: A magnetic layer for storing information in the form of a fixed, two-dimensional array of magnetic domains. The magnetic layer can be magnetized in either of two opposite directions normal to the plane of the layer. The walls of the domains are fixed by local gradients in the value and direction of the magnetic anisotropy and in the value and direction of the magnetic exchange energy of the magnetic layer. The local gradients may be caused by a relatively high defect density at the domain wall locations, by implanting ions into the magnetic layer at the locations of the domain walls thereby causing a local expansion of the crystal lattice of the layer, and/or by etching a multiplicity of non-connected tapering channels in and substantially perpendicular to the plane of the magnetic layer at these locations. Where tapering channels are used, the magnetic layer is provided on a substrate such that the crystal lattice constant of the magnetic layer is different from the crystal lattice constant of the substrate.
    Type: Grant
    Filed: July 13, 1978
    Date of Patent: June 23, 1981
    Assignee: U.S. Philips Corporation
    Inventors: Christoph Schmelzer, Reimar Spohr, Jens-Peter Krumme, Klaus Witter, Heinrich Heitmann