Abstract: A process for producing a single-crystal silicon wafer, comprises the following steps: producing a layer on the front surface of the silicon wafer by epitaxial deposition or production of a layer whose electrical resistance differs from the electrical resistance of the remainder of the silicon wafer on the front surface of the silicon wafer, or production of an external getter layer on the back surface of the silicon wafer, and heat treating the silicon wafer at a temperature which is selected to be such that an inequality (1) [ Oi ] < [ Oi ] eq ? ( T ) ? exp ? 2 ? ? SiO ? ? 2 ? ? rkT is satisfied, where [Oi] is an oxygen concentration in the silicon wafer, [Oi]eq(T) is a limit solubility of oxygen in silicon at a temperature T, ?SiO2 is the surface energy of silicon dioxide, ? is a volume of a precipitated oxygen atom, r is a mean COP and k the Boltzmann constant, with the silicon wafer, during the heat treatment, at least part of the time being exposed to an oxygen-con

Abstract: A process for producing a single-crystal silicon wafer, comprises the following steps: producing a layer on the front surface of the silicon wafer by epitaxial deposition or production of a layer whose electrical resistance differs from the electrical resistance of the remainder of the silicon wafer on the front surface of the silicon wafer, or production of an external getter layer on the back surface of the silicon wafer, and heat treating the silicon wafer at a temperature which is selected to be such that an inequality (1) [ O ? ? i ] < [ O ? ? i ] eq ? ( T ) ? exp ? ? 2 ? ? SiO ? 2 ? ? r ? ? k ? ? T is satisfied, where [Oi] is an oxygen concentration in the silicon wafer, [Oi]eq(T) is a limit solubility of oxygen in silicon at a temperature T, ?SiO2 is the surface energy of silicon dioxide, ? is a volume of a precipitated oxygen atom, r is a mean COP radius and k the Boltzmann constant, with the silicon wafer, during the heat treatment, at least pa

Abstract: A process for producing a single-crystal silicon wafer, comprises the following steps: producing a layer on the front surface of the silicon water by epitaxial deposition or production of a layer whose electrical resistance differs from the electrical resistance of the remainder of the silicon wafer on the front surface of the silicon wafer, or production of an external getter layer on the back surface of the silicon wafer, and heat treating the silicon wafer at a temperature which is selected to be such that an inequality (1) [ Oi ] < [ Oi ] eq ? ( T ) ? exp ? 2 ? ? SiO ? ? ? 2 ? ? rkT is satisfied where [Oi] is an oxygen concentration in the silicon wafer, [Oi]eq(T) is a limit colubility of oxygen in silicon at a temperature T, ?sio2 is the surface energy of silicon dioxide, ? is a volume of a precipitated oxygen atom, r is a mean COP and k the Boltzmann constant, with the silicon wafer, during the heat treatment, at least part of the time being exposed to an oxygen-containing

Abstract: A process for producing a single-crystal silicon wafer, comprises the following steps: producing a layer on the front surface of the silicon wafer by epitaxial deposition or production of a layer whose electrical resistance differs from the electrical resistance of the remainder of the silicon wafer on the front surface of the silicon wafer, or production of an external getter layer on the back surface of the silicon wafer, and heat treating the silicon wafer at a temperature which is selected to be such that an inequality (1) [ O ? ? ? i ] < [ O ? ? ? i ] eq ? ( T ) ? exp ? ? ? 2 ? ? SiO ? 2 ? ? r ? ? ? k ? ? ? T is satisfied, where [Oi] is an oxygen concentration in the silicon wafer, [Oi]eq(T) is a limit solubility of oxygen in silicon at a temperature T, ?SiO2 is the surface energy of silicon dioxide, ? is a volume of a precipitated oxygen atom, r is a mean COP radius and k the Boltzmann constant, with the silicon wafer, during the heat treatment, at least part

Abstract: A process for the heat treatment of a silicon wafer, during which the silicon wafer is at least temporarily exposed to an oxygen-containing atmosphere, the heat treatment taking place at a temperature which is selected in such a way that the inequality [ Oi ] < [ Oi ] eq ⁢ ( T ) ⁢ exp ⁢ ( 2 ⁢ σ SiO 2 ⁢ Ω rkT ) is satisfied, where [Oi] is the oxygen concentration in the silicon wafer [Oi]eq(T) is the limit solubility of oxygen in silicon at a temperature T, &sgr;SiO2 is the surface energy of silicon dioxide &OHgr; is the volum

Abstract: A process for the heat treatment of a silicon wafer, during which the silicon wafer is at least temporarily exposed to an oxygen-containing atmosphere, the heat treatment taking place at a temperature which is selected in such a way that the inequality 1 [ Oi ] < [ Oi ] eq ⁢ ( T ) ⁢ exp ⁢ ( 2 ⁢ σ SiO 2 ⁢ Ω rkT )