Patents by Inventor Christoph Spengler

Christoph Spengler has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20230296989
    Abstract: A pattern writing method for charged-particle lithography apparatuses using an improved correction for thermal distortion of the substrate includes determining an exposure position where the beam impinges on the substrate and the power of the beam at the exposure position; calculating heating of the substrate at the exposure position, and calculating, for a plurality of locations over the substrate, and the thermal diffusion and radiative cooling; calculating, for the same or a reduced plurality of locations on the substrate, the positional change of the substrate due to thermal expansion; determining a displacement distance which compensates the positional change at the exposure position, updating the structure to be written by shifting the exposure position of the beam by said displacement distance, and writing the updated structures on the substrate with the beam. These steps are repeated as a function of time and/or varying exposure position of the beam substrate position.
    Type: Application
    Filed: March 16, 2023
    Publication date: September 21, 2023
    Applicant: IMS Nanofabrication GmbH
    Inventors: Matthias Liertzer, Christoph Spengler, Wolf Naetar, Elmar Platzgummer
  • Publication number: 20230184183
    Abstract: A method for checking the association of structure-borne noise sensors of an internal combustion engine having a plurality of cylinders, which internal combustion engine can be operated in diesel operation or with individualized gas injection and in the case of which internal combustion engine a structure-borne noise sensor is arranged in the region of each cylinder, wherein the output signals of the structure-borne noise sensors reflect a knock index and are captured by a computing unit, wherein the internal combustion engine is operated in order to perform the method. The output signals of all structure-borne noise sensors are determined during at least one working cycle, which is formed by two revolutions of a crankshaft, in the respective positions of the crankshaft. The output signal of a cylinder is compared with the average value or the median value of the output signals of other cylinders.
    Type: Application
    Filed: December 1, 2016
    Publication date: June 15, 2023
    Inventors: Johannes BAUER, Stephan BRENDLER, Frederik HAHN, Christoph Georg HUND, Tim SP√ĄDER, Patrick SPENGLER
  • Patent number: 11569064
    Abstract: A method for irradiating a target with a beam of energetic electrically charged particles, wherein the target comprises an exposure region where an exposure by said beam is to be performed, and the exposure of a desired pattern is done employing a multitude of exposure positions on the target. Each exposure position represents the location of one of a multitude of exposure spots of uniform size and shape, with each exposure spot covering at least one pattern pixel of the desired pattern. The exposure positions are located within a number of mutually separate cluster areas which are defined at respective fixed locations on the target. In each cluster area the exposure position are within a given neighboring distance to a next neighboring exposure position, while the cluster areas are separated from each other by spaces free of exposure positions, which space has a width, which is at least the double of the neighboring distance.
    Type: Grant
    Filed: September 17, 2018
    Date of Patent: January 31, 2023
    Assignee: IMS Nanofabrication GmbH
    Inventors: Elmar Platzgummer, Christoph Spengler, Wolf Naetar
  • Publication number: 20230015805
    Abstract: A fine-adjustable electromagnetic lens for a charged-particle optical apparatus comprises a magnetic circuit assembly including one or more ring magnets, and a sleeve insert of generally rotational symmetry around a longitudinal axis. The sleeve insert surrounds a passage opening extending along the longitudinal axis, and comprises several electrically conductive electrode elements configured to generate an electrostatic field within the passage opening. The ring magnets are arranged circumferentially around an inner yoke shell and surrounded by an outer yoke shell; the inner yoke shell in turn surrounds a central portion of the sleeve insert. The ring magnets are magnetized such that the two magnetic poles are oriented towards the inner and outer yoke shell, respectively.
    Type: Application
    Filed: July 7, 2022
    Publication date: January 19, 2023
    Applicant: IMS Nanofabrication GmbH
    Inventors: Christoph Spengler, Dietmar Puchberger, Johannes Leitner, Theodor Adaktylos, Stefan Eder-Kapl
  • Publication number: 20220384143
    Abstract: In a writing process in a charged-particle multi-beam apparatus, a desired pattern is written onto a target wherein said desired pattern is provided as input pattern data (INPDAT) in a vector format and processed through a pattern data processing flow. A data preprocessing system receives the input pattern data (INPDAT) and preprocesses the input pattern data independently of the writing process, preferably in advance to it, using writing parameter data provided to the data preprocessing system, and writes the intermediate pattern data (IMDAT) thus obtained to a data storage. When a writing process is carried out using the apparatus, its writing control system reads the intermediate pattern data from the data storage, converts them into pattern streaming data (SBUF), and streams the pattern streaming data to the apparatus for writing the pattern to the target.
    Type: Application
    Filed: May 24, 2022
    Publication date: December 1, 2022
    Applicant: IMS Nanofabrication GmbH
    Inventors: Elmar Platzgummer, Christoph Spengler, Michael Haberler
  • Publication number: 20210335573
    Abstract: A charged-particle source for generating a charged-particle comprises a sequence of electrodes, including an emitter electrode with an emitter surface, a counter electrode held at an electrostatic voltage with respect to the emitter electrode at a sign opposite to that of the electrically charged particles, and one or more adjustment electrodes surrounding the source space between the emitter electrode and the counter electrode. These electrodes have a basic overall rotational symmetry along a central axis, with the exception of one or more steering electrodes which is an electrode which interrupts the radial axial-symmetry of the electric potential of the source, for instance tilted or shifted to an eccentric position or orientation, configured to force unintended, secondary charged particles away from the emission surface.
    Type: Application
    Filed: April 19, 2021
    Publication date: October 28, 2021
    Applicant: IMS Nanofabrication GmbH
    Inventors: Stefan Gerhold, Werner Rupp, Mattia Capriotti, Christoph Spengler
  • Patent number: 11099482
    Abstract: In a charged-particle lithography apparatus, during writing a desired pattern, the duration of exposure slots is adapted to compensate for fluctuations of the particle beam. In the writing process the aperture images are mutually overlapping on the target so each pixel is exposed through a number of aperture images overlapping at the respective pixel, which results in an exposure of the respective pixel through an effective pixel exposure time, i.e.
    Type: Grant
    Filed: May 1, 2020
    Date of Patent: August 24, 2021
    Assignee: IMS Nanofabrication GmbH
    Inventors: Gottfried Hochleitner, Christoph Spengler, Wolf Naetar
  • Publication number: 20210240074
    Abstract: In order to compensate for undesired effects of varying elevation of a target with respect to a nominal target plane, during writing a desired pattern on the target in a charged-particle beam apparatus, the pattern is re-calculated in each of a number of segments of the target plane by: determining an elevation of the target in the segment from the nominal target plane; determining a local blur value which represents the actual value of blur corresponding to the elevation, with regard to a dependence of the blur upon the elevation of the target; calculating a convolution kernel which represents a point spreading function realizing a local blur value; and re-calculating a nominal exposure pattern by applying the kernel to the pattern. The convolution kernel corresponds to introducing an additional blur into the pattern in the segment, increasing the blur to a given target blur value which is uniform to all segments.
    Type: Application
    Filed: February 3, 2021
    Publication date: August 5, 2021
    Applicant: IMS Nanofabrication GmbH
    Inventors: Christoph Spengler, Wolf Naetar, Johannes Leitner
  • Patent number: 10840054
    Abstract: A charged-particle source for emission of electrons or other electrically charged particles comprises, located between the emitter electrode having an emitter surface and a counter electrode, at least two adjustment electrodes; a pressure regulator device is configured to control the gas pressure in the source space at a pre-defined pressure value. In a first cleaning mode of the particle source, applying a voltage between the emitter and counter electrodes directs gas particles towards the counter electrode, generating secondary electrons which ionize particles of the gas in the source space, and electrostatic potentials are applied to at least some of the adjustment electrodes, generating an electric field directing the ionized gas particles onto the emitter surface.
    Type: Grant
    Filed: January 28, 2019
    Date of Patent: November 17, 2020
    Assignee: IMS Nanofabrication GmbH
    Inventors: Elmar Platzgummer, Mattia Capriotti, Christoph Spengler
  • Publication number: 20200348597
    Abstract: In a charged-particle lithography apparatus, during writing a desired pattern, the duration of exposure slots is adapted to compensate for fluctuations of the particle beam. In the writing process the aperture images are mutually overlapping on the target so each pixel is exposed through a number of aperture images overlapping at the respective pixel, which results in an exposure of the respective pixel through an effective pixel exposure time, i.e.
    Type: Application
    Filed: May 1, 2020
    Publication date: November 5, 2020
    Applicant: IMS Nanofabrication GmbH
    Inventors: Gottfried Hochleitner, Christoph Spengler, Wolf Naetar
  • Patent number: 10651010
    Abstract: A rasterized exposure method implementing a position correction for edge positions to correct for a non-linear relationship between the position of a feature edge (dCD) of a pattern element boundary and the nominal position of the boundary as expressed through the dose of exposure (d) of the edge pixel is provided. The position correction includes: determining a position value of the edge position, determining a corrected position value based on the position value using a predefined non linear function, and modifying the pattern to effectively shift the pattern element boundary in accordance with the corrected position value. The non linear function describes the inverse of the relationship between a nominal position value (d), which is used as input value during exposure of the pattern, and a resulting position (dCD) of the pattern element boundary generated when exposed with the nominal position value.
    Type: Grant
    Filed: January 3, 2019
    Date of Patent: May 12, 2020
    Assignee: IMS Nanofabrication GmbH
    Inventors: Elmar Platzgummer, Christoph Spengler, Wolf Naetar
  • Patent number: 10522329
    Abstract: A method for re-calculating a pattern to be exposed on a target by means of a charged-particle multi-beam writing apparatus is presented. The pattern elements of a pattern, initially associated with a respective assigned dose, are recalculated in view of obtaining reshaped pattern elements which have a nominal dose as assigned dose. The nominal dose represents a predefined standard value of exposure dose to be exposed for pixels during a scanning stripe exposure within the multi-beam apparatus.
    Type: Grant
    Filed: August 20, 2018
    Date of Patent: December 31, 2019
    Assignee: IMS Nanofabrication GmbH
    Inventors: Elmar Platzgummer, Christoph Spengler, Wolf Naetar
  • Publication number: 20190237288
    Abstract: A charged-particle source for emission of electrons or other electrically charged particles comprises, located between the emitter electrode having an emitter surface and a counter electrode, at least two adjustment electrodes; a pressure regulator device is configured to control the gas pressure in the source space at a pre-defined pressure value. In a first cleaning mode of the particle source, applying a voltage between the emitter and counter electrodes directs gas particles towards the counter electrode, generating secondary electrons which ionize particles of the gas in the source space, and electrostatic potentials are applied to at least some of the adjustment electrodes, generating an electric field directing the ionized gas particles onto the emitter surface.
    Type: Application
    Filed: January 28, 2019
    Publication date: August 1, 2019
    Applicant: IMS Nanofabrication GmbH
    Inventors: Elmar Platzgummer, Mattia Capriotti, Christoph Spengler
  • Publication number: 20190214226
    Abstract: In a rasterized exposure method, in order to correct for a non-linear relationship between the position of a feature edge (dCD) of a pattern element boundary and the nominal position of the boundary as expressed through the dose of exposure (d) of the edge pixel, a position correction for edge positions is employed. The position correction includes: determining a position value describing said edge position, determining a corrected position value based on the position value using a predefined non-linear function, and modifying the pattern to effectively shift the pattern element boundary in accordance with the corrected position value. The non-linear function describes the inverse of the relationship between a nominal position value (d), which is used as input value during exposure of the pattern, and a resulting position (dCD) of the pattern element boundary generated when exposed with said nominal position value.
    Type: Application
    Filed: January 3, 2019
    Publication date: July 11, 2019
    Applicant: IMS Nanofabrication GmbH
    Inventors: Elmar Platzgummer, Christoph Spengler, Wolf Naetar
  • Patent number: 10325757
    Abstract: In a charged-particle multi-beam writing method a desired pattern is written on a target using a beam of energetic electrically charged particles, by imaging apertures of a pattern definition device onto the target, as a pattern image which is moved over the target. Thus, exposure stripes are formed which cover the region to be exposed in sequential exposures, and the exposure stripes are mutually overlapping, such that each area of said region is exposed by at least two different areas of the pattern image at different transversal offsets (Y1). For each pixel, a corrected dose amount is calculated by dividing the value of the nominal dose amount by a correction factor (q), wherein the same correction factor (q) is used with pixels located at positions which differ only by said transversal offsets (Y1) of overlapping stripes.
    Type: Grant
    Filed: January 25, 2018
    Date of Patent: June 18, 2019
    Assignee: IMS Nanofabrication GmbH
    Inventors: Elmar Platzgummer, Christoph Spengler, Hanns Peter Petsch
  • Publication number: 20190088448
    Abstract: A method for irradiating a target with a beam of energetic electrically charged particles, wherein the target comprises an exposure region where an exposure by said beam is to be performed, and the exposure of a desired pattern is done employing a multitude of exposure positions on the target. Each exposure position represents the location of one of a multitude of exposure spots of uniform size and shape, with each exposure spot covering at least one pattern pixel of the desired pattern. The exposure positions are located within a number of mutually separate cluster areas which are defined at respective fixed locations on the target. In each cluster area the exposure position are within a given neighboring distance to a next neighboring exposure position, while the cluster areas are separated from each other by spaces free of exposure positions, which space has a width, which is at least the double of the neighboring distance.
    Type: Application
    Filed: September 17, 2018
    Publication date: March 21, 2019
    Applicant: IMS Nanofabrication GmbH
    Inventors: Elmar Platzgummer, Christoph Spengler, Wolf Naetar
  • Publication number: 20190066976
    Abstract: A method for re-calculating a pattern to be exposed on a target by means of a charged-particle multi-beam writing apparatus is presented. The pattern elements of a pattern, initially associated with a respective assigned dose, are recalculated in view of obtaining reshaped pattern elements which have a nominal dose as assigned dose. The nominal dose represents a predefined standard value of exposure dose to be exposed for pixels during a scanning stripe exposure within the multi-beam apparatus.
    Type: Application
    Filed: August 20, 2018
    Publication date: February 28, 2019
    Applicant: IMS Nanofabrication GmbH
    Inventors: Elmar Platzgummer, Christoph Spengler, Wolf Naetar
  • Publication number: 20180218879
    Abstract: In a charged-particle multi-beam writing method a desired pattern is written on a target using a beam of energetic electrically charged particles, by imaging apertures of a pattern definition device onto the target, as a pattern image which is moved over the target. Thus, exposure stripes are formed which cover the region to be exposed in sequential exposures, and the exposure stripes are mutually overlapping, such that each area of said region is exposed by at least two different areas of the pattern image at different transversal offsets (Y1). For each pixel, a corrected dose amount is calculated by dividing the value of the nominal dose amount by a correction factor (q), wherein the same correction factor (q) is used with pixels located at positions which differ only by said transversal offsets (Y1) of overlapping stripes.
    Type: Application
    Filed: January 25, 2018
    Publication date: August 2, 2018
    Applicant: IMS Nanofabrication GmbH
    Inventors: Elmar Platzgummer, Christoph Spengler, Hanns Peter Petsch
  • Patent number: 9568907
    Abstract: Method for computing an exposure pattern for exposing a desired pattern on a target in a charged-particle lithography apparatus, in which a particle beam is directed to and illuminates a pattern definition device comprising an aperture array composed of a plurality of blanking apertures through which said particle beam penetrates for writing said desired pattern by exposing a multitude of pixels within an exposure area on the target, said method taking into account a spatially dependent distortion of the target within the exposure area, with respect to dislocations transversal to the direction of the particle beam.
    Type: Grant
    Filed: September 3, 2015
    Date of Patent: February 14, 2017
    Assignee: IMS Nanofabrication AG
    Inventors: Elmar Platzgummer, Christoph Spengler, Markus Wagner, Samuel Kvasnica
  • Publication number: 20160071684
    Abstract: Method for computing an exposure pattern for exposing a desired pattern on a target in a charged-particle lithography apparatus, in which a particle beam is directed to and illuminates a pattern definition device comprising an aperture array composed of a plurality of blanking apertures through which said particle beam penetrates for writing said desired pattern by exposing a multitude of pixels within an exposure area on the target, said method taking into account a spatially dependent distortion of the target within the exposure area, with respect to dislocations transversal to the direction of the particle beam.
    Type: Application
    Filed: September 3, 2015
    Publication date: March 10, 2016
    Applicant: IMS Nanofabrication AG
    Inventors: Elmar Platzgummer, Christoph Spengler, Markus Wagner, Samuel Kvasnica