Abstract: Disclosed is a method for removing individual layers of a layer stack. The layer stack includes a semiconductor layer disposed onto an optically dense electrically conductive layer which in turn is disposed upon an optically transparent layer. A laser at a first power level is projected through the optically transparent layer and onto the optically dense electrically conductive layer. The semiconductor layer is removed through heat evaporation imparted by the laser at the first power level without removing the optically dense electrically conductive layer. Optionally, the laser at a second power level, which is greater than the first power level, is projected onto the optically dense electrically conductive layer through the optically transparent layer. The optically dense electrically conductive layer is removed through heat evaporation imparted by the laser at the second power level without removing the optically transparent layer.

Abstract: In a method for removing at least sections of at least one semiconductor layer (4) of a layer stack (1), an optically dense metallisation layer (3) is heated such that the semiconductor layer located on top is detached.