Abstract: A method for orientation-based localization or position determination of a rail vehicle includes capturing sensor data that are correlated with a change of orientation of the rail vehicle. A time-dependent change of orientation of the rail vehicle is determined on the basis of the sensor data. Moreover, an estimated velocity of the rail vehicle is determined on the basis of the captured sensor data and/or on the basis of additionally captured sensor data. A distance-dependent orientation of the rail vehicle is subsequently determined on the basis of the estimated velocity and the time-dependent change of orientation of the rail vehicle. Furthermore, an absolute position of the rail vehicle is determined by comparing the determined distance-dependent orientation of the rail vehicle with reference data of a distance-dependent orientation. A localization facility and a rail vehicle are also described.

Abstract: Compounds, compositions, and methods for use in inhibiting the E3 enzyme Cbl-b in the ubiquitin proteasome pathway are disclosed. The compounds, compositions, and methods can be used to modulate the immune system, to treat diseases amenable to immune system modulation, and for treatment of cells in vivo, in vitro, or ex vivo. Also disclosed are pharmaceutical compositions comprising a Cbl-b inhibitor and a cancer vaccine, as well as methods for treating cancer using a Cbl-b inhibitor and a cancer vaccine; and pharmaceutical compositions comprising a Cbl-b inhibitor and an oncolytic virus, as well as methods for treating cancer using a Cbl-b inhibitor and an oncolytic virus.

Abstract: There is provided a method of determining a scan sequence for magnetic resonance imaging—MRI. The method comprises: receiving an indication of one or more selected imaging parameters for the MRI; and based on the selected imaging parameters, determining the scan sequence usable by an MRI apparatus to perform the MRI, wherein determining the scan sequence comprises configuring the scan sequence to modulate gradient noise arising from the MRI apparatus during the MRI to deliver a first audible signal to the patient, wherein the first audible signal is configured to perform auditory stimulation of slow wave activity in the patient.

Abstract: The present invention relates to a bispecific antibody construct comprising a first human binding domain which binds to human CDH3 on the surface of a target cell and a second binding domain which binds to human CDS on the surface of a T cell. Moreover, the invention provides a polynucleotide encoding the antibody construct, a vector comprising said polynucleotide and a host cell transformed or transected with said polynucleotide or vector. Furthermore, the invention provides a process for the production of the antibody construct of the invention, a medical use of said antibody construct and a kit comprising said antibody construct.

Abstract: A method for determining a minimum width of a microjoint by which, when machining a workpiece, in particular a sheet-like workpiece, a workpiece part remains connected to a remaining workpiece of the workpiece. In the method, the minimum width of the microjoint is determined in dependence on at least one machining parameter which influences a relative position of the workpiece part in relation to the remaining workpiece during the machining of the workpiece. A further method determines an attachment position of such a microjoint and a still further method machines the workpiece.

Abstract: Methods, devices, and systems for beam processing of plate-shaped or tubular workpieces are provided. In one aspect, a method includes: generating at least one section of a cutting gap cutting through the workpiece along a cutting line corresponding to at least part of a contour of a workpiece part to be produced from the workpiece by a processing beam, and performing at least one non-joining and non-cutting finishing treatment of the workpiece with a partially cut-out workpiece part at least in one section of at least one finishing zone by the processing beam, the finishing zone extending along the cutting line.

Abstract: Methods, devices, apparatus, and systems are described for separating workpiece parts from workpieces using a focused machining beam. The methods include creating a trough in the workpiece using the focused machining beam, the trough being created along at least one section of a contour of the at least one workpiece part to be separated from the workpiece, altering a focal position of the machining beam such that the machining beam has a smaller beam diameter on the workpiece, and creating a gap in the workpiece using the machining beam with the altered focal position along at least one section of the contour of the at least one workpiece part to be separated from the workpiece. The gap is created at least partially within the trough.

Abstract: Processes, devices, and systems for beam processing of plate-shaped or tubular workpieces are provided. The processes include: a) carrying out at least one cutting procedure for producing a cutting gap along a cutting line that extends at least partially along a contour of a workpiece part to be produced from the workpiece, and b) carrying out at least one finishing procedure for finishing the workpiece along at least one part of the cutting gap, during which the workpiece part is not completely cut out. The cutting procedure includes moving a beam head for guiding a processing beam above the workpiece along the cutting line from a first cutting position to a second cutting position. The finishing procedure includes moving the beam head over the workpiece, and the processing beam is guided along a finishing line from a first finishing position to a second finishing position.

Abstract: An embodiment relates to a method of manufacturing an insulated gate bipolar transistor in a semiconductor body. A first field stop zone portion of a first conductivity type is formed on a semiconductor substrate. A second field stop zone portion of the first conductivity type is formed on the first field stop zone portion. A drift zone of the first conductivity type is formed on the second field stop zone portion. A doping concentration in the drift zone is smaller than 1013 cm?3 along a vertical extension of more than 30% of a thickness of the semiconductor body upon completion of the insulated gate bipolar transistor.

Abstract: A semiconductor body includes first and second opposing surfaces, an edge extending in a vertical direction substantially perpendicular to the first surface, an active area, a peripheral area arranged in a horizontal direction substantially parallel to the first surface between the active area and edge, and a pn-junction extending from the active area into the peripheral area. In the peripheral area the semiconductor device further includes a first conductive region arranged next to the first surface, a second conductive region arranged next to the first surface, and arranged in the horizontal direction between the first conductive region and edge, and a passivation structure including a first portion at least partly covering the first conductive region, a second portion at least partly covering the second conductive region. The first portion has a different layer composition than the second portion and/or a thickness which differs from the thickness of the second portion.

Abstract: A method of manufacturing a power semiconductor device includes: creating a doped contact region on top of a surface of a carrier; creating, on top of the contact region, a doped transition region having a maximum dopant concentration of at least 0.5*1015 cm?3 for at least 70% of a total extension of the doped transition region in an extension direction and a maximal dopant concentration gradient of at most 3*1022 cm?4, wherein a lower subregion of the doped transition region is in contact with the contact region and has a maximum dopant concentration at least 100 times higher than a maximum dopant concentration of an upper subregion of the doped transition region; and creating a doped drift region on top of the upper subregion of the doped transition region, the doped drift region having a lower dopant concentration than the upper subregion of the doped transition region.

Abstract: An embodiment relates to a method of manufacturing an insulated gate bipolar transistor in a semiconductor body. A first field stop zone portion of a first conductivity type is formed on a semiconductor substrate. A second field stop zone portion of the first conductivity type is formed on the first field stop zone portion. A drift zone of the first conductivity type is formed on the second field stop zone portion. A doping concentration in the drift zone is smaller than 1013 cm?3 along a vertical extension of more than 30% of a thickness of the semiconductor body upon completion of the insulated gate bipolar transistor.

Abstract: A method of manufacturing a power semiconductor device includes: creating a doped contact region on top of a surface of a carrier; creating, on top of the contact region, a doped transition region having a maximum dopant concentration of at least 0.5*1015 cm?3 for at least 70% of a total extension of the doped transition region in an extension direction and a maximal dopant concentration gradient of at most 3*1022 cm?4, wherein a lower subregion of the doped transition region is in contact with the contact region and has a maximum dopant concentration at least 100 times higher than a maximum dopant concentration of an upper subregion of the doped transition region; and creating a doped drift region on top of the upper subregion of the doped transition region, the doped drift region having a lower dopant concentration than the upper subregion of the doped transition region.

Abstract: A method of producing a semiconductor device is presented. The method comprises: providing a semiconductor substrate having a surface; epitaxially growing, along a vertical direction (Z) perpendicular to the surface, a back side emitter layer on top of the surface, wherein the back side emitter layer has dopants of a first conductivity type or dopants of a second conductivity type complementary to the first conductivity type; epitaxially growing, along the vertical direction (Z), a drift layer having dopants of the first conductivity type above the back side emitter layer, wherein a dopant concentration of the back side emitter layer is higher than a dopant concentration of the drift layer; and creating, either within or on top of the drift layer, a body region having dopants of the second conductivity type, a transition between the body region and the drift layer forming a pn-junction (Zpn).

Abstract: A power semiconductor device has a semiconductor body configured to conduct a load current in parallel to an extension direction between first and second load terminals of the power semiconductor device. The semiconductor body includes a doped contact region electrically connected to the second load terminal, a doped drift region having a dopant concentration that is smaller than a dopant concentration of the contact region, and an epitaxially grown doped transition region separated from the second load terminal by the contact region and that couples the contact region to the drift region. An upper subregion of the transition region is in contact with the drift region, and a lower subregion of the transition region is in contact with the contact region. The transition region has a dopant concentration of at least 0.5*1015 cm?3 for at least 5% of the total extension of the transition region in the extension direction.

Abstract: A power semiconductor device has a semiconductor body configured to conduct a load current in parallel to an extension direction between first and second load terminals of the power semiconductor device. The semiconductor body includes a doped contact region electrically connected to the second load terminal, a doped drift region having a dopant concentration that is smaller than a dopant concentration of the contact region, and an epitaxially grown doped transition region separated from the second load terminal by the contact region and that couples the contact region to the drift region. An upper subregion of the transition region is in contact with the drift region, and a lower subregion of the transition region is in contact with the contact region. The transition region has a dopant concentration of at least 0.5*1015 cm?3 for at least 5% of the total extension of the transition region in the extension direction.

Abstract: A semiconductor component includes an element composed of a conductive material, which is arranged above a surface of a semiconductor substrate. The element includes an element region not adjoined by any electrical contacts to an overlying or underlying electrically conductive plane. In this case, a surface of the element facing away from the semiconductor substrate is patterned with elevations or depressions and a surface of the element region facing the semiconductor substrate is patterned to a lesser extent or is not patterned.

Abstract: A method of producing a semiconductor device is presented. The method comprises: providing a semiconductor substrate having a surface; epitaxially growing, along a vertical direction (Z) perpendicular to the surface, a back side emitter layer on top of the surface, wherein the back side emitter layer has dopants of a first conductivity type or dopants of a second conductivity type complementary to the first conductivity type; epitaxially growing, along the vertical direction (Z), a drift layer having dopants of the first conductivity type above the back side emitter layer, wherein a dopant concentration of the back side emitter layer is higher than a dopant concentration of the drift layer; and creating, either within or on top of the drift layer, a body region having dopants of the second conductivity type, a transition between the body region and the drift layer forming a pn-junction (Zpn).

Abstract: A semiconductor device includes a first semiconductor region having first charge carriers of a first conductivity type and a second semiconductor region having second charge carriers. The first semiconductor region includes a transition region in contact with the second semiconductor region, the transition region having a first concentration of the first charge carriers, a contact region having a second concentration of the first charge carriers, wherein the second concentration is higher than the first concentration, and a damage region between the contact region and the transition region. The damage region is configured for reducing lifetime and/or mobility of the first charge carriers of the damage region as compared to the lifetime and/or the mobility of the first charge carriers of the contact region and the transition region.

Abstract: A method of producing a semiconductor device is presented. The method comprises: providing a semiconductor substrate having a surface; epitaxially growing, along a vertical direction (Z) perpendicular to the surface, a back side emitter layer on top of the surface, wherein the back side emitter layer has dopants of a first conductivity type or dopants of a second conductivity type complementary to the first conductivity type; epitaxially growing, along the vertical direction (Z), a drift layer having dopants of the first conductivity type above the back side emitter layer, wherein a dopant concentration of the back side emitter layer is higher than a dopant concentration of the drift layer; and creating, either within or on top of the drift layer, a body region having dopants of the second conductivity type, a transition between the body region and the drift layer forming a pn-junction (Zpn).