Patents by Inventor Christoph Wilbertz
Christoph Wilbertz has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 9500620Abstract: A layer system having a layer region, whereby the layer region has a single-crystal silicon substrate with a front side and a back side, and whereby a textured surface is formed on the front side and the textured surface has a topography with different heights and a thin film layer of a metal oxide and/or an oxide ceramic is formed on the textured surface, whereby the thin film layer covers the textured surface only partially.Type: GrantFiled: October 6, 2014Date of Patent: November 22, 2016Assignee: Micronas GmbHInventors: Christoph Wilbertz, Dominik Zimmermann
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Patent number: 9437676Abstract: A layer system having a layer region whereby the layer region has a single-crystal silicon substrate with a front side and a back side, and whereby a textured surface is formed on the front side and the textured surface has a topography with different heights and a thin film layer of a metal oxide and/or an oxide ceramic is formed on the textured surface, whereby the thin film layer covers the textured surface.Type: GrantFiled: October 6, 2014Date of Patent: September 6, 2016Assignee: Micronas GmbHInventors: Christoph Wilbertz, Dominik Zimmermann
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Publication number: 20150096354Abstract: A layer system having a layer region, whereby the layer region has a single-crystal silicon substrate with a front side and a back side, and whereby a textured surface is formed on the front side and the textured surface has a topography with different heights and a thin film layer of a metal oxide and/or an oxide ceramic is formed on the textured surface, whereby the thin film layer covers the textured surface only partially.Type: ApplicationFiled: October 6, 2014Publication date: April 9, 2015Inventors: Christoph WILBERTZ, Dominik ZIMMERMANN
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Publication number: 20150096353Abstract: A layer system having a layer region whereby the layer region has a single-crystal silicon substrate with a front side and a back side, and whereby a textured surface is formed on the front side and the textured surface has a topography with different heights and a thin film layer of a metal oxide and/or an oxide ceramic is formed on the textured surface, whereby the thin film layer covers the textured surface.Type: ApplicationFiled: October 6, 2014Publication date: April 9, 2015Inventors: Christoph WILBERTZ, Dominik ZIMMERMANN
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Patent number: 8669662Abstract: A fastening device is provided that includes a semiconductor body with an integrated circuit, and a dielectric passivation layer formed on the surface of the semiconductor body, and a trace formed underneath the passivation layer, and an oxide layer formed beneath the trace, and a connecting component that forms a frictional connection between a component formed above the passivation layer and the semiconductor body, wherein a formation passing through the passivation layer and the oxide layer and having a bottom surface is formed, and a conductive layer is formed on the bottom surface and the connecting component forms an electrical connection between the conductive layer and the component.Type: GrantFiled: December 2, 2012Date of Patent: March 11, 2014Assignee: Micronas GmbHInventors: Christoph Wilbertz, Heinz-Peter Frerichs, Tobias Kolleth
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Patent number: 8592875Abstract: A semiconductor gas sensor is provided that includes a semiconductor body with a passivation layer formed on a surface of thereof. A gas-sensitive control electrode is separated from a channel region by a gap or a control electrode is arranged as a first plate of a capacitor with a gap and a second plate of the capacitor is connected to a gate of the field effect transistor implemented as a Capacitively Controlled Field Effect Transistor. The control electrode has is connected to a reference voltage. A support area is provided with a first support structure and a second support structure. A contact area is provided on the surface of the semiconductor body. A first contact region has a frictional connection and an electrical connection with the control electrode and the second contact region has at least a frictional connection with the control electrode.Type: GrantFiled: November 21, 2012Date of Patent: November 26, 2013Assignee: Micronas GmbHInventors: Christoph Wilbertz, Heinz-Peter Frerichs, Tobias Kolleth
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Patent number: 8242545Abstract: A device for detecting a gas or gas mixture has a first and a second gas sensor. The first gas sensor is a MOSFET, which comprises a first source, a first drain, a first channel zone disposed between the latter elements, and a first gas sensitive layer capacitively coupled to the first channel zone that contains palladium and reacts to a change in the concentration of the gas to be detected with a change in its work function. The second gas sensor has, in a semiconductor substrate, a second source, a second drain, and a second channel zone between the latter elements, which is capacitively coupled via an air gap to a suspended gate. The latter comprises a second gas sensitive layer that reacts to a change in the concentration of the gas to be detected with a change in its work function. The second gas sensitive layer is arranged on a support layer and faces the air gap.Type: GrantFiled: April 22, 2010Date of Patent: August 14, 2012Assignee: Micronas GmbHInventors: Christoph Wilbertz, Heinz-Peter Frerichs, Ingo Freund
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Patent number: 8226892Abstract: A gas sensor has a gas-sensitive layer with a surface area where the electron affinity depends on the concentration of a target gas brought in contact with the surface area. An electrical potential sensor is capacitively coupled to the surface area via an air gap. The surface area of the gas-sensitive layer is covered by an electric insulating layer that is inert to the target gas and is bonded to the gas-sensitive layer. The coating is designed in such a way that it is permeable for the target gas and a different, non-target gas that can be adsorbed on the surface area. The coating has different diffusion constants for the target gas and the non-target gas. The diffusion constants are coordinated with each other in such a way that the sensitivity of the gas sensor to the target gas increases when the target gas concentration exceeds a predetermined concentration threshold in the presence of the non-target gas.Type: GrantFiled: March 25, 2009Date of Patent: July 24, 2012Assignee: Micronas GmbHInventors: Christoph Wilbertz, Heinz-Peter Frerichs, Christoph Senft
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Patent number: 8056394Abstract: In a procedure for measuring the concentration of a target gas, a gas sensor is provided whose sensor signal at constant temperature is dependent on a target gas concentration and has a lower measurement sensitivity in a first modulation range than in a second modulation range. The position of the modulation ranges is dependent on the temperature. The temperature of the gas sensor is controlled so that the sensor signal is essentially independent of the target gas concentration and lies within the second modulation range. The temperature of the gas sensor is then a measurement for the target gas concentration.Type: GrantFiled: March 25, 2009Date of Patent: November 15, 2011Assignee: Micronas GmbHInventors: Heinz-Peter Frerichs, Hans-Günter Zimmer, Tobias Kolleth, Christoph Wilbertz
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Patent number: 7918123Abstract: A gas sensor has at least one gas sensitive layer, which has at least one surface area in which the work function is dependent upon the concentration of a target gas capable of being brought into contact with the surface zone. At least one electric potential sensor is capacitatively coupled to the surface zone over an air gap. The surface zone of the gas sensitive layer is covered with an electrically insulating coating which is inert to the target gas and which is adhesively bound to the gas sensitive layer. The coating is configured so that it is permeable to the target gas and so that when the target gas contacts the surface zone of the gas sensitive layer, it prevents or at least impedes an alteration of the bound state of atoms and/or molecules bound to the surface zone and differing from the target gas.Type: GrantFiled: June 19, 2008Date of Patent: April 5, 2011Assignee: Micronas GmbHInventors: Christoph Wilbertz, Heinz-Peter Frerichs
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Publication number: 20100270595Abstract: A device for detecting a gas or gas mixture has a first and a second gas sensor. The first gas sensor is a MOSFET, which comprises a first source, a first drain, a first channel zone disposed between the latter elements, and a first gas sensitive layer capacitively coupled to the first channel zone that contains palladium and reacts to a change in the concentration of the gas to be detected with a change in its work function. The second gas sensor has, in a semiconductor substrate, a second source, a second drain, and a second channel zone between the latter elements, which is capacitively coupled via an air gap to a suspended gate. The latter comprises a second gas sensitive layer that reacts to a change in the concentration of the gas to be detected with a change in its work function. The second gas sensitive layer is arranged on a support layer and faces the air gap.Type: ApplicationFiled: April 22, 2010Publication date: October 28, 2010Applicant: MICRONAS GMBHInventors: Christoph Wilbertz, Heinz-Peter Frerichs, Ingo Freund
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Publication number: 20090272175Abstract: In a procedure for measuring the concentration of a target gas, a gas sensor is provided whose sensor signal at constant temperature is dependent on a target gas concentration and has a lower measurement sensitivity in a first modulation range than in a second modulation range. The position of the modulation ranges is dependent on the temperature. The temperature of the gas sensor is controlled so that the sensor signal is essentially independent of the target gas concentration and lies within the second modulation range. The temperature of the gas sensor is then a measurement for the target gas concentration.Type: ApplicationFiled: March 25, 2009Publication date: November 5, 2009Applicant: MICRONAS GMBHInventors: Heinz-Peter Frerichs, Hans-Günter Zimmer, Tobias Kolleth, Christoph Wilbertz
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Publication number: 20090246084Abstract: A gas sensor has a gas-sensitive layer with a surface area where the electron affinity depends on the concentration of a target gas brought in contact with the surface area. An electrical potential sensor is capacitively coupled to the surface area via an air gap. The surface area of the gas-sensitive layer is covered by an electric insulating layer that is inert to the target gas and is bonded to the gas-sensitive layer. The coating is designed in such a way that it is permeable for the target gas and a different, non-target gas that can be adsorbed on the surface area. The coating has different diffusion constants for the target gas and the non-target gas. The diffusion constants are coordinated with each other in such a way that the sensitivity of the gas sensor to the target gas increases when the target gas concentration exceeds a predetermined concentration threshold in the presence of the non-target gas.Type: ApplicationFiled: March 25, 2009Publication date: October 1, 2009Applicant: Micronas GmbHInventors: Christoph Wilbertz, Heinz-Peter Frerichs, Christoph Senft
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Patent number: 7554135Abstract: A device for detecting a gas or gas mixture having at least one first gas sensor designed as an SGFET and at least—one second, additional gas sensor designed as a Lundström-FET. The gas sensors are connected to a processing device designed to analyze the measurement signals from both types of gas sensors in order to detect the gas or gas mixture.Type: GrantFiled: March 4, 2005Date of Patent: June 30, 2009Assignee: Micronas GmbHInventors: Mirko Lehmann, Heinz-Peter Frerichs, Christoph Wilbertz
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Publication number: 20090078026Abstract: A gas sensor has at least one gas sensitive layer, which has at least one surface area in which the work function is dependent upon the concentration of a target gas capable of being brought into contact with the surface zone. At least one electric potential sensor is capacitatively coupled to the surface zone over an air gap. The surface zone of the gas sensitive layer is covered with an electrically insulating coating which is inert to the target gas and which is adhesively bound to the gas sensitive layer. The coating is configured so that it is permeable to the target gas and so that when the target gas contacts the surface zone of the gas sensitive layer, it prevents or at least impedes an alteration of the bound state of atoms and/or molecules bound to the surface zone and differing from the target gas.Type: ApplicationFiled: June 19, 2008Publication date: March 26, 2009Applicant: MICRONAS GMBHInventors: Christoph Wilbertz, Heinz-Peter Frerichs
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Publication number: 20080237654Abstract: A device for detecting a gas or gas mixture having at least one first gas sensor designed as an SGFET and at least—one second, additional gas sensor designed as a Lundström-FET. The gas sensors are connected to a processing device designed to analyze the measurement signals from both types of gas sensors in order to detect the gas or gas mixture.Type: ApplicationFiled: March 4, 2005Publication date: October 2, 2008Applicant: Micronas GmbHInventors: Mirko Lehmann, Heinz-Peter Frerichs, Christoph Wilbertz
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Publication number: 20070047172Abstract: The invention relates to a monolithic arrangement, especially an integrated circuit (IC), with a floating electrode (FE), at least one conductor track (ML) for connecting the floating electrode (FE) to a system component (MS) inside the monolithic arrangement, a plurality of other conductor tracks (L) at least temporarily conducting potential in order to carry signals or currents between components (MS, GND), structures and/or contacts (K), and an insulator (IS) for electrical insulating of the conductor track (ML) and the other conductor tracks (L) from each other, wherein one layout of the conductor track (ML) and of the other conductor tracks (L) is such that the path of the conductor track (ML) does not cross the path of any of the conductor tracks (L). It is advisable to maintain a minimum distance between the measuring conductor track and the other conductor tracks.Type: ApplicationFiled: August 9, 2006Publication date: March 1, 2007Inventors: Christoph Wilbertz, Heinz-Peter Frerichs
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Patent number: 7091083Abstract: A method for producing a capacitor comprises providing a raw structure having a substrate and at least one dielectric layer, wherein a first area and a second area of the substrate are separated by an isolating layer. Above the first and second areas, an electrically conductive layer is arranged on the at least one dielectric layer. Further, a mask layer is deposited on the electrically conductive layer, wherein it is structured for generating a first mask above the first area. The method further comprises etching away the electrically conductive layer and at least one of the dielectric layers in the second area by means of the first mask and completing an active device in the second area.Type: GrantFiled: July 9, 2004Date of Patent: August 15, 2006Assignee: Infineon Technologies AGInventors: Claus Dahl, Knut Stahrenberg, Christoph Wilbertz
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Publication number: 20050037591Abstract: A method for producing a capacitor comprises providing a raw structure having a substrate and at least one dielectric layer, wherein a first area and a second area of the substrate are separated by an isolating layer. Above the first and second areas, an electrically conductive layer is arranged on the at least one dielectric layer. Further, a mask layer is deposited on the electrically conductive layer, wherein it is structured for generating a first mask above the first area. The method further comprises etching away the electrically conductive layer and at least one of the dielectric layers in the second area by means of the first mask and completing an active device in the second area.Type: ApplicationFiled: July 9, 2004Publication date: February 17, 2005Applicant: Infineoon Technologies AGInventors: Claus Dahl, Knut Stahrenberg, Christoph Wilbertz