Abstract: High-performance light-emitting diode together with apparatus and method embodiments thereto are disclosed. The light emitting diode devices emit at a wavelength of 390 nm to 470 nm or at a wavelength of 405 nm to 430 nm. Light emitting diode devices are characterized by having a geometric relationship (e.g., aspect ratio) between a lateral dimension of the device and a vertical dimension of the device such that the geometric aspect ratio forms a volumetric light emitting diode that delivers a substantially flat current density across the device (e.g., as measured across a lateral dimension of the active region). The light emitting diode devices are characterized by having a current density in the active region of greater than about 175 Amps/cm2.

Abstract: A method of improving high-current density efficiency of an LED, said method comprising: (a) preparing a series of LEDs having decreasing defect densities, wherein each LED of said series has a peak IQE of at least 50%, and wherein each LED of said series has the same epitaxial structure; (b) determining an increase in IQEs at high-current density between at least two LEDs of said series; (c) preparing at least an additional LED of said series by reducing defect density relative to the previously obtained lowest defect density; and (d) reiterating steps (b) and (c) until said increase is at least 3% between two LEDs of said series having a decrease X in defect densities.

Abstract: High-performance light-emitting diode together with apparatus and method embodiments thereto are disclosed. The light emitting diode devices emit at a wavelength of 390 nm to 470 nm or at a wavelength of 405 nm to 430 nm. Light emitting diode devices are characterized by having a geometric relationship (e.g., aspect ratio) between a lateral dimension of the device and a vertical dimension of the device such that the geometric aspect ratio forms a volumetric light emitting diode that delivers a substantially flat current density across the device (e.g., as measured across a lateral dimension of the active region). The light emitting diode devices are characterized by having a current density in the active region of greater than about 175 Amps/cm2.

Abstract: Techniques for controlling oxygen concentration levels during annealing of highly-reflective contacts for LED devices together with lamps, LED device and method embodiments thereto are disclosed.

Abstract: A method of improving high-current density efficiency of an LED, said method comprising: (a) preparing a series of LEDs having decreasing defect densities, wherein each LED of said series has a peak IQE of at least 50%, and wherein each LED of said series has the same epitaxial structure; (b) determining an increase in IQEs at high-current density between at least two LEDs of said series; (c) preparing at least an additional LED of said series by reducing defect density relative to the previously obtained lowest defect density; and (d) reiterating steps (b) and (c) until said increase is at least 3% between two LEDs of said series having a decrease X in defect densities.

Abstract: A method of forming a III-Nitride based device comprising: (a) depositing first layers by MOCVD on a substrate, wherein the first layers comprise device layers of III-Nitride material; and (b) depositing epitaxial second layers over the first layers by at least one of sputtering, plasma deposition, pulsed laser deposition, or liquid phase epitaxy, wherein the second layers comprise III-Nitride material and define at least partially a tunnel junction.

Abstract: A semiconductor comprising at least one contact, formed on an interface with the semiconductor, the contact comprising at least a layer of a first metal, the first metal being of sufficient amount to impart a first property in the layer; and a second metal diffused in the layer, the second metal having a concentration in the layer sufficiently low such that the second metal does not diminish significantly the first property of the layer, the concentration being sufficiently high such that the second metal imparts significantly a second property in the layer.

Abstract: Techniques for controlling oxygen concentration levels during annealing of highly-reflective contacts for LED devices together with lamps, LED device and method embodiments thereto are disclosed.

Abstract: High-performance light-emitting diode together with apparatus and method embodiments thereto are disclosed. The light emitting diode devices emit at a wavelength of 390 nm to 470 nm or at a wavelength of 405 nm to 430 nm. Light emitting diode devices are characterized by having a geometric relationship (e.g., aspect ratio) between a lateral dimension of the device and a vertical dimension of the device such that the geometric aspect ratio forms a volumetric light emitting diode that delivers a substantially flat current density across the device (e.g., as measured across a lateral dimension of the active region). The light emitting diode devices are characterized by having a current density in the active region of greater than about 175 Amps/cm2.

Abstract: High-performance light-emitting diode together with apparatus and method embodiments thereto are disclosed. The light emitting diode devices emit at a wavelength of 390 nm to 470 nm or at a wavelength of 405 nm to 430 nm. Light emitting diode devices are characterized by having a geometric relationship (e.g., aspect ratio) between a lateral dimension of the device and a vertical dimension of the device such that the geometric aspect ratio forms a volumetric light emitting diode that delivers a substantially flat current density across the device (e.g., as measured across a lateral dimension of the active region). The light emitting diode devices are characterized by having a current density in the active region of greater than about 175 Amps/cm2.

Abstract: Techniques for controlling oxygen concentration levels during annealing of highly-reflective contacts for LED devices together with lamps, LED device and method embodiments thereto are disclosed.

Abstract: Techniques for controlling oxygen concentration levels during annealing of highly-reflective contacts for LED devices together with lamps, LED device and method embodiments thereto are disclosed.

Abstract: High-performance light-emitting diode together with apparatus and method embodiments thereto are disclosed. The light emitting diode devices emit at a wavelength of 390 nm to 470 nm or at a wavelength of 405 nm to 430 nm. Light emitting diode devices are characterized by having a geometric relationship (e.g., aspect ratio) between a lateral dimension of the device and a vertical dimension of the device such that the geometric aspect ratio forms a volumetric light emitting diode that delivers a substantially flat current density across the device (e.g., as measured across a lateral dimension of the active region). The light emitting diode devices are characterized by having a current density in the active region of greater than about 175 Amps/cm2.

Abstract: A method of forming a HI-Nitride based device comprising: (a) depositing first layers by MOCVD on a substrate, wherein the first layers comprise device layers of III-Nitride material; and (b) depositing epitaxial second layers over the first layers by at least one of sputtering, plasma deposition, pulsed laser deposition, or liquid phase epitaxy, wherein the second layers comprise III-Nitride material and define at least partially a tunnel junction.

Abstract: High-performance light-emitting diode together with apparatus and method embodiments thereto are disclosed. The light emitting diode devices emit at a wavelength of 390 nm to 470 nm or at a wavelength of 405 nm to 430 nm. Light emitting diode devices are characterized by having a geometric relationship (e.g., aspect ratio) between a lateral dimension of the device and a vertical dimension of the device such that the geometric aspect ratio forms a volumetric light emitting diode that delivers a substantially flat current density across the device (e.g., as measured across a lateral dimension of the active region). The light emitting diode devices are characterized by having a current density in the active region of greater than about 175 Amps/cm2.

Abstract: High-performance light-emitting diode together with apparatus and method embodiments thereto are disclosed. The light emitting diode devices emit at a wavelength of 390 nm to 470 nm or at a wavelength of 405 nm to 430 nm. Light emitting diode devices are characterized by having a geometric relationship (e.g., aspect ratio) between a lateral dimension of the device and a vertical dimension of the device such that the geometric aspect ratio forms a volumetric light emitting diode that delivers a substantially flat current density across the device (e.g., as measured across a lateral dimension of the active region). The light emitting diode devices are characterized by having a current density in the active region of greater than about 175 Amps/cm2.

Abstract: A current aperture vertical electron transistor (CAVET) with ammonia (NH3) based molecular beam epitaxy (MBE) grown p-type Gallium Nitride (p-GaN) as a current blocking layer (CBL). Specifically, the CAVET features an active buried Magnesium (Mg) doped GaN layer for current blocking purposes. This structure is very advantageous for high power switching applications and for any device that requires a buried active p-GaN layer for its functionality.

Abstract: High-performance light-emitting diode together with apparatus and method embodiments thereto are disclosed. The light emitting diode devices emit at a wavelength of 390 nm to 470 nm or at a wavelength of 405 nm to 430 nm. Light emitting diode devices are characterized by having a geometric relationship (e.g., aspect ratio) between a lateral dimension of the device and a vertical dimension of the device such that the geometric aspect ratio forms a volumetric light emitting diode that delivers a substantially flat current density across the device (e.g., as measured across a lateral dimension of the active region). The light emitting diode devices are characterized by having a current density in the active region of greater than about 175 Amps/cm2.

Abstract: High-performance light-emitting diode together with apparatus and method embodiments thereto are disclosed. The light emitting diode devices emit at a wavelength of 390 nm to 470 nm or at a wavelength of 405 nm to 430 nm. Light emitting diode devices are characterized by having a geometric relationship (e.g., aspect ratio) between a lateral dimension of the device and a vertical dimension of the device such that the geometric aspect ratio forms a volumetric light emitting diode that delivers a substantially flat current density across the device (e.g., as measured across a lateral dimension of the active region). The light emitting diode devices are characterized by having a current density in the active region of greater than about 175 Amps/cm2.

Abstract: A current aperture vertical electron transistor (CAVET) with ammonia (NH3) based molecular beam epitaxy (MBE) grown p-type Gallium Nitride (p-GaN) as a current blocking layer (CBL). Specifically, the CAVET features an active buried Magnesium (Mg) doped GaN layer for current blocking purposes. This structure is very advantageous for high power switching applications and for any device that requires a buried active p-GaN layer for its functionality.