Abstract: An optical element includes an active region overlying a substrate and disposed between an n-type layer and a p-type layer, a plurality of n-type contacts each overlying a respective portion of the n-type layer, and a p-type contact overlying the p-type layer and opposing the plurality of n-type contacts.

Abstract: The present disclosure provides a device for determining the presence of BNP, proBNP and NT-proBNP. The devices comprise multiple capture regions configured to selectively capture BNP, proBNP and NT-proBNP by specific binding of proBNP. Alternatively or additionally, the devices may capture and label epitopes to distinguish proBNP from NT-proBNP or BNP.

Abstract: A light source includes an epitaxial layer stack that includes an n-type semiconductor layer, a light-emitting layer, and a p-type semiconductor layer. The epitaxial layer stack includes a two-dimensional (2-D) array of mesa structures formed therein. The light source further includes an array of p-contacts electrically coupled to the p-type semiconductor layer of the 2-D array of mesa structures, a metal layer in regions surrounding individual mesa structures of the 2-D array of mesa structures, and a plurality of n-contacts coupling the metal layer to the n-type semiconductor layer at a plurality of locations between the individual mesa structures of the 2-D array of mesa structures.

Abstract: A biosensor structure may include a well structure having a bottom surface, a side surface, and an open top. A biosensor structure may include a first membrane having a top surface and a bottom surface. A biosensor structure may include an electrode configured to sense an analyte in a solution in the well structure, wherein the electrode is disposed on the bottom surface of the well structure, wherein the bottom surface of the membrane is disposed on the electrode and on the bottom surface of the well structure, and wherein at least one of bottom surface and the side surface comprises a textured feature.

Abstract: A biosensor structure may include a well structure comprising a first well and a second well, wherein a geometry of the well structure impacts where a solution dispensed into the well structure is located. A biosensor structure may include an electrode configured to sense an analyte in the solution, the electrode disposed at a bottom of the well structure. A biosensor structure may include a membrane positioned on the electrode and on at least part of a bottom surface of the well structure.

Abstract: A method for increasing carrier confinement in light-emitting devices may comprise (1) selectively depositing material over a layered structure of a light-emitting device and (2) defining an emitter size of the light-emitting device by causing the material to disorder regions of a light-emitting layer included in the layered structure. Various other apparatuses, systems, and methods are also disclosed.

Abstract: A microfabricated thermal platform can be formed over a substrate, such as a silicon wafer, that may form part of the platform. The substrate is coated in a thermally-insulating material, which may be an organic polymer such, as polyimide or SUS. The surface of the thermally-insulating material may include an arrangement of one or more thermal sites, with each site having a reaction plate (or thermal plate) over which chemical reactions may occur. A heating element may be positioned beneath each reaction plate. A fluidic medium, such as a liquid or a gas, may be disposed over the thermal sites. One application is in chemical and biological reactions. In such reactions, the fluidic medium may be an aqueous solution which comprises reagents for those reactions. The fluidic medium may be an ionically conducting fluid, organic solution or a gas. Precise temperature control enables the correct reactions.

Abstract: A sensor assembly for determining a property of an analyte in a sample, where a modification unit comprising a set of modification electrodes with at least a first modification electrode is provided adjacent or on a sensing element, which includes a capture species, and which modification unit is configured modify a property of at least a portion of a sample received on the sensing element.

Abstract: In a flip-chip LED assembly having an array of LEDs formed on the same substrate, different LEDs of the array have different distances to the n-contacts of the assembly. This may cause current crowding as current has to spread from the n-contacts through the substrate to each the farthest LEDs of the LED array, requiring LEDs that are farther away to be driven with a higher voltage in order to receive a desired amount of current. To spread current more evenly through the LED assembly and reduce a voltage difference between the closest and farthest LEDs of the array, a current spreading layer having a conductive material (e.g., a conductive oxide) is formed on a surface of the substrate of the LED assembly. The current spreading layer may be a bulk layer or be patterned to increase light extraction from the LEDs of the array.

Abstract: The present disclosure provides a sensing assembly for sensing an analyte. The sensing assembly comprises multiple test electrodes configured to provide signals from multiple independent measurements in response to the analyte. Alternatively or additionally, the multiple test electrodes are configured to produce different transient responses in response to a given concentration of the analyte.

Abstract: A display system may include a light source that emits input light having a wavelength within a source wavelength range and an array of color conversion units overlapping a display area. A first set of color conversion units of the array of color conversion units may include a first color conversion medium that converts the input light to a first color of light having a wavelength within a first wavelength range that is different than the source wavelength range. The display system may also include a waveguide having an out-coupler that directs the input light from the light source toward the array of color conversion units. Various other devices, systems, and methods are also disclosed.

Abstract: Described are LED devices and corresponding manufacturing techniques. In some embodiments, an LED device includes a first doped semiconductor layer, a second doped semiconductor layer having an opposite doping, and a two-dimensional (2D) array of light emitting cells. Each light emitting cell corresponds to a mesa of an individual pixel and includes at least one quantum well. The 2D array is located between the first doped semiconductor layer and the second doped semiconductor layer. The LED device further includes a flattening layer between the first doped semiconductor layer and the 2D array. The flattening layer comprises an undoped quantum barrier (QB) layer that completely covers sidewalls of each light emitting cell in the 2D array. The undoped QB layer quantum mechanically isolates the light emitting cells from each other. The flattening or undoped QB layer may also protect the light emitting cells against etch-induced defects during a mesa pixelation process.

Abstract: The invention relates to a process for identifying patients affected by an autoimmune neurological disease, comprising a step of detection of at least one type of anti-Argonaute autoantibodies (AGO-Abs) in a biological sample of an individual susceptible to be affected by said disease, wherein positive detection of said at least one type of AGO-Abs means that said individual is affected by said autoimmune neurological disease.

Abstract: In a flip-chip LED assembly having an array of LEDs formed on the same substrate, different LEDs of the array have different distances to the n-contacts of the assembly. This may cause current crowding as current has to spread from the n-contacts through the substrate to each the farthest LEDs of the LED array, requiring LEDs that are farther away to be driven with a higher voltage in order to receive a desired amount of current. To spread current more evenly through the LED assembly and reduce a voltage difference between the closest and farthest LEDs of the array, one or more additional n-contacts are formed within the LED array. In some embodiments, the n-contacts may replace a pixel of the LED array. In other embodiments, one or more p-contacts of the LED array are resized or repositioned to accommodate the additional n-contacts without sacrificing pixels of the LED array.

Abstract: Embodiments of the disclosure provide various nanogap sensor designs (e.g., horizontal nanogap sensors, vertical nanogap sensors, arrays of multiple nanogap sensors, various arrangements for making electrical connections to the electrodes of nanogap sensors, etc.), as well as various methods which may be used to fabricate at least some of the proposed sensors. The nanogap sensors proposed herein may operate as molecular sensors to help identify chemical species through electrical measurements using at least a pair of electrodes separated by a nanogap.

Abstract: Embodiments of the disclosure provide various nanogap sensor designs (e.g., horizontal nanogap sensors, vertical nanogap sensors, arrays of multiple nanogap sensors, various arrangements for making electrical connections to the electrodes of nanogap sensors, etc.), as well as various methods which may be used to fabricate at least some of the proposed sensors. The nanogap sensors proposed herein may operate as molecular sensors to help identify chemical species through electrical measurements using at least a pair of electrodes separated by a nanogap.

Abstract: LED devices and corresponding techniques for manufacturing LED devices are described. In some embodiments, an LED device includes a plurality of mesas, each mesa corresponding to a separate LED and including a layered semiconductor structure. The layered semiconductor structure includes an active region and a quantum barrier (QB) layer. The active region has a matrix of quantum well (QW) cells that are quantum mechanically isolated by the QB layer. In particular, the QB layer can include ridge-shaped structures that laterally separate adjacent QW cells. The matrix of QW cells can be arranged as a two-dimensional array. In some embodiments, the QW cells are epitaxially grown such that each QW cell is thicker along a central region and thinner along a peripheral region, with the peripheral region corresponding to where the QW cell meets a ridge-shaped structure of the QB layer.

Abstract: A sensor assembly for sensing an analyte in a sample matrix comprises an electrode assembly comprising a set of at least one test electrode and may also comprise one or more control electrodes and/or an applicator assembly. The electrode assembly is configured or configurable to define one or more active test electrodes of the set of one or more test electrodes, and at least one of the electrode assembly and the applicator assembly is or are configured or configurable to adjust a quantity of the analyte provided to the active electrode(s), per unit time, for said interaction based at least in part on an analyte characteristic. Alternatively or additionally, the electrode assembly is configured and arranged in a flow path such that the amounts of sample matrix provided to the test electrode(s) and control electrode(s) of the electrode assembly are substantially equal.

Abstract: A device includes an optical assembly and a digital projector. The optical assembly is configured to receive visible scene light at a backside of the optical assembly and to direct the visible scene light on an optical path toward an eyeward side. The optical assembly includes a dimming layer disposed on the optical path. The dimming layer includes a photochromic material that is configured to darken in response to exposure to a range of light wavelengths. The digital projector is disposed on the eyeward side of the optical assembly and is configured to selectively emit an activation light within the range of light wavelengths to activate a darkening of a region of the dimming layer to dim the visible scene light within the region.

Abstract: A micro-light emitting diode (micro-LED) includes a mesa structure that includes an n-type semiconductor layer, a p-type semiconductor layer, and an active region between the n-type semiconductor layer and the p-type semiconductor layer. The active region includes at least one quantum well layer. The at least one quantum well layer has a first effective bandgap and a first stress in a center region of the at least one quantum well layer, and a second effective bandgap and a second stress in a mesa sidewall region of the at least one quantum well layer. The second stress is lower than the first stress or is opposite to the first stress. The second effective bandgap is greater than the first effective bandgap to form a lateral carrier barrier in the at least one quantum well layer.