Patents by Inventor Christophe Bouvier
Christophe Bouvier has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
-
Patent number: 11398579Abstract: A method for producing optoelectronic devices, including the following successive steps: providing a substrate having a first face; on the first face, forming sets of light-emitting diodes including wire-like, conical or frustoconical semiconductor elements; covering all of the first face with a layer encapsulating the light-emitting diodes; forming a conductive element that is insulated from the substrate and extends through the substrate from the second face to at least the first face; reducing the thickness of the substrate; and cutting the resulting structure in order to separate each set of light-emitting diodes.Type: GrantFiled: June 19, 2018Date of Patent: July 26, 2022Assignees: Commissariat à l'Énergie Atomique et aux Énergies Alternatives, AlediaInventors: Christophe Bouvier, Emilie Pougeoise, Xavier Hugon, Carlo Cagli, Tiphaine Dupont, Philippe Gibert, Nacer Aitmani, Vincent Beix, Thomas Lacave, Marion Volpert, Olivier Girard, Denis Renaud, Brigitte Soulier
-
Patent number: 10937777Abstract: An optoelectronic device including a semiconductor substrate that is optionally doped with a first type of conductivity; a first semiconductor region that is electrically connected to the substrate, doped with the first type of conductivity or a second opposite type of conductivity and more strongly doped than the substrate; a first set of first light-emitting diodes resting on the first semiconductor region, the first light-emitting diodes comprising wire-like, conical or frustoconical semiconductor elements; and a conductive portion in contact with the first semiconductor region.Type: GrantFiled: July 3, 2019Date of Patent: March 2, 2021Assignee: AlediaInventors: Christophe Bouvier, Erwan Dornel, Xavier Hugon, Carlo Cagli
-
Publication number: 20190326270Abstract: An optoelectronic device including a semiconductor substrate that is optionally doped with a first type of conductivity; a first semiconductor region that is electrically connected to the substrate, doped with the first type of conductivity or a second opposite type of conductivity and more strongly doped than the substrate; a first set of first light-emitting diodes resting on the first semiconductor region, the first light-emitting diodes comprising wire-like, conical or frustoconical semiconductor elements; and a conductive portion in contact with the first semiconductor region.Type: ApplicationFiled: July 3, 2019Publication date: October 24, 2019Applicant: AlediaInventors: Christophe Bouvier, Erwan Dornel, Xavier Hugon, Carlo Cagli
-
Patent number: 10211365Abstract: A method for producing optoelectronic devices, including the following successive steps: providing a substrate having a first face; on the first face, forming sets of light-emitting diodes including wire-like, conical or frustoconical semiconductor elements; covering all of the first face with a layer encapsulating the light-emitting diodes; forming a conductive element that is insulated from the substrate and extends through the substrate from the second face to at least the first face; reducing the thickness of the substrate; and cutting the resulting structure in order to separate each set of light-emitting diodes.Type: GrantFiled: September 30, 2014Date of Patent: February 19, 2019Assignees: Commissariat à l'Énergie Atomique et aux Énergies Alternatives, AlediaInventors: Christophe Bouvier, Emilie Pougeoise, Xavier Hugon, Carlo Cagli, Tiphaine Dupont, Philippe Gibert, Nacer Aitmani
-
Publication number: 20180301594Abstract: A method for producing optoelectronic devices, including the following successive steps: providing a substrate having a first face; on the first face, forming sets of light-emitting diodes including wire-like, conical or frustoconical semiconductor elements; covering all of the first face with a layer encapsulating the light-emitting diodes; forming a conductive element that is insulated from the substrate and extends through the substrate from the second face to at least the first face; reducing the thickness of the substrate; and cutting the resulting structure in order to separate each set of light-emitting diodes.Type: ApplicationFiled: June 19, 2018Publication date: October 18, 2018Applicants: Commissariat à l'Énergie Atomique et aux Énergies Alternatives, AlediaInventors: Christophe Bouvier, Emilie Pougeoise, Xavier Hugon, Carolo Cagli, Tiphaine Dupont, Philippe Gibert, Nacer Aitmani, Vincent Beix, Thomas Lacave, Marion Volpert, Olivier Girard, Denis Renaud, Brigitte Soulier
-
Patent number: 9960205Abstract: An optoelectronic device including a semiconductor substrate including first and second opposing faces, a first set of first light-emitting diodes resting on a first portion of the substrate and including conical or frustoconical wire-like semiconductor elements, a first electrode covering each first light-emitting diode, a first conductive portion insulated from the substrate, extending through the substrate and connected to the first electrode; a second set of second light-emitting diodes resting on a second portion of the substrate and including conical or frustoconical wire-like semiconductor elements, a second electrode covering each second light-emitting diode, a second conductive portion insulated from the substrate and connected to the second electrode, and a first conductive element connecting the first conductive portion to the second portion of the substrate on the side of the second face.Type: GrantFiled: September 30, 2014Date of Patent: May 1, 2018Assignee: AlediaInventors: Christophe Bouvier, Erwan Dornel
-
Patent number: 9876142Abstract: An optoelectronic device including a support having a first face; a first set of first light-emitting diodes having first wire-like, conical or frustoconical semiconductor elements, each resting on a second face of a first contact stud, each first contact stud including, in addition, a third face opposite the second face; and a first conductive layer connecting the first contact studs and extending at least over part of the second face or the third face of each first contact stud, the first conductive layer and/or the first contact studs resting on the support.Type: GrantFiled: September 30, 2014Date of Patent: January 23, 2018Assignee: AlediaInventors: Christophe Bouvier, Erwan Dornel
-
Publication number: 20160300881Abstract: An optoelectronic device including a semiconductor substrate including first and second opposing faces, a first set of first light-emitting diodes resting on a first portion of the substrate and including conical or frustoconical wire-like semiconductor elements, a first electrode covering each first light-emitting diode, a first conductive portion insulated from the substrate, extending through the substrate and connected to the first electrode; a second set of second light-emitting diodes resting on a second portion of the substrate and including conical or frustoconical wire-like semiconductor elements, a second electrode covering each second light-emitting diode, a second conductive portion insulated from the substrate and connected to the second electrode, and a first conductive element connecting the first conductive portion to the second portion of the substrate on the side of the second face.Type: ApplicationFiled: September 30, 2014Publication date: October 13, 2016Applicant: AlediaInventors: Christophe Bouvier, Erwan Dornel
-
Publication number: 20160233381Abstract: An optoelectronic device including a support having a first face; a first set of first light-emitting diodes having first wire-like, conical or frustoconical semiconductor elements, each resting on a second face of a first contact stud, each first contact stud including, in addition, a third face opposite the second face; and a first conductive layer connecting the first contact studs and extending at least over part of the second face or the third face of each first contact stud, the first conductive layer and/or the first contact studs resting on the support.Type: ApplicationFiled: September 30, 2014Publication date: August 11, 2016Applicant: AlediaInventors: Christophe Bouvier, Erwan Dornel
-
Publication number: 20160218240Abstract: A method for producing optoelectronic devices, including the following successive steps: providing a substrate having a first face; on the first face, forming sets of light-emitting diodes including wire-like, conical or frustoconical semiconductor elements; covering all of the first face with a layer encapsulating the light-emitting diodes; forming a conductive element that is insulated from the substrate and extends through the substrate from the second face to at least the first face; reducing the thickness of the substrate; and cutting the resulting structure in order to separate each set of light-emitting diodes.Type: ApplicationFiled: September 30, 2014Publication date: July 28, 2016Applicants: Commissariat à l'Énergie Atomique et aux Énergies Alternatives, AlediaInventors: Christophe Bouvier, Emilie Pougeoise, Xavier Hugon, Carolo Cagli, Tiphaine Dupont, Philippe Gibert, Nacer Aitmani
-
Publication number: 20160197064Abstract: An optoelectronic device including a semiconductor substrate that is optionally doped with a first type of conductivity; a first semiconductor region that is electrically connected to the substrate, doped with the first type of conductivity or a second opposite type of conductivity and more strongly doped than the substrate; a first set of first light-emitting diodes resting on the first semiconductor region, the first light-emitting diodes comprising wire-like, conical or frustoconical semiconductor elements; and a conductive portion in contact with the first semiconductor region.Type: ApplicationFiled: September 30, 2014Publication date: July 7, 2016Applicant: AlediaInventors: Christophe Bouvier, Erwan Dornel, Xavier Hugon, Carolo Cagli
-
Patent number: 9312169Abstract: Method for producing a microelectronic device formed from a stack of supports (W) each provided with one or more electronic components (C) and comprising a conductive structure (170, 470) formed from a first blind conductive via (171b, 472) and a second blind conductive via (171a, 473) with a greater height, the first via and the second via being connected together.Type: GrantFiled: August 7, 2014Date of Patent: April 12, 2016Assignee: Commissariat a l'energie atomique et aux energies alternativesInventors: Christophe Bouvier, Gabriel Pares
-
Publication number: 20150044866Abstract: Method for producing a microelectronic device formed from a stack of supports (W) each provided with one or more electronic components (C) and comprising a conductive structure (170, 470) formed from a first blind conductive via (171b, 472) and a second blind conductive via (171a, 473) with a greater height, the first via and the second via being connected together.Type: ApplicationFiled: August 7, 2014Publication date: February 12, 2015Applicant: COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENE ALTInventors: Christophe BOUVIER, Gabriel PARES
-
Publication number: 20100164048Abstract: The disclosure provides a method for fabricating a semiconductor substrate comprising the steps of: providing a semiconductor on insulator type substrate, providing a diffusion barrier layer and providing a second semiconductor layer. By providing the diffusion barrier layer, it becomes possible to suppress diffusion from the highly doped first semiconductor layer into the second semiconductor layer. The invention also relates to a corresponding semiconductor substrate and opto-electronic devices comprising such a substrate.Type: ApplicationFiled: December 22, 2009Publication date: July 1, 2010Applicant: S.O.I.TEC Silicon on Insulator TechnologiesInventors: Christophe Figuet, Christophe Bouvier, Céline Cailler, Alexis Drouin, Thibaut Maurice