Patents by Inventor Christophe CIBERT

Christophe CIBERT has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Buffer layer for the crystal growth of metal oxides of perovskite type in particular on amorphous substrates
    Patent number: 12503391
    Abstract: A multilayer conductive system of metal oxides, the system including a substrate; a layer of a crystalline binary metal oxide deposited on the substrate, and a layer of a crystalline conductive metal oxide having a crystalline structure of perovskite type superposed over the layer of binary metal oxide, where the binary metal oxide of the layer has a local lattice mismatch of less than 5% with respect to that of the metal oxide of the layer, provided that when the metal oxide of perovskite type of the layer is a crystalline transparent conductive metal oxide, the substrate is transparent, and the thickness of the crystalline binary metal oxide layer is <20 nm, preferably <10 nm, most preferentially 5-7 nm.
    Type: Grant
    Filed: July 22, 2021
    Date of Patent: December 23, 2025
    Assignees: CENTRE NATIONAL DE LA RECHERCHE SCIENTIFIQUE, ECOLE NATIONALE SUPERIEURE D'INGENIEURS DE CAEN, UNIVERSITE DE CAEN NORMANDIE
    Inventors: Alexis Boileau, Christophe Cibert, Adrian David, Arnaud Fouchet, Fabrice Gourbilleau, Christophe Labbé, Ulrike Lüders, Gilles Poullain
  • BUFFER LAYER FOR THE CRYSTAL GROWTH OF METAL OXIDES OF PEROVSKITE TYPE IN PARTICULAR ON AMORPHOUS SUBSTRATES
    Publication number: 20230298778
    Abstract: The present invention relates to a multilayer conductive system of metal oxides comprising: i. a substrate; ii. a layer of a crystalline binary metal oxide deposited on the substrate (i); and iii. a layer of a crystalline conductive metal oxide having a crystalline structure of perovskite type superposed over the layer of binary metal oxide (ii); the binary metal oxide of the layer (ii) having a local lattice mismatch of less than 5% with respect to that of the metal oxide of the layer (iii); provided that when the metal oxide of perovskite type of the layer (iii) is a crystalline transparent conductive metal oxide, the substrate (i) is transparent and the thickness of the crystalline binary metal oxide layer (ii) is <20 nm, preferably <10 nm, most preferentially 5-7 nm.
    Type: Application
    Filed: July 22, 2021
    Publication date: September 21, 2023
    Inventors: Alexis BOILEAU, Christophe CIBERT, Adrian DAVID, Arnaud FOUCHET, Fabrice GOURBILLEAU, Christophe LABBÉ, Ulrike LÜDERS, Gilles POULLAIN