Abstract: A device for detecting at least one object present in a sample, the device including a light source to emit at least one incident wave at a wavelength ?, a detection volume intended to receive the object, and to receive at least one incident wave, an image sensor positioned to receive at least one scattered light wave obtained by diffraction of the incident wave on the object and a reference wave from the source and not diffracted on the object and to generate a holographic image, and a computer data processing device to digitally reconstruct the object based at least on the holographic image and the wavelength ?. The device also comprises a support comprising patterns organized to form at least one diffraction grating, the grating being periodic and having a pitch P, such that ?/2?P?2?.

Abstract: A device for detecting at least one object present in a sample, the device including a light source to emit at least one incident wave at a wavelength ?, a detection volume intended to receive the object, and to receive at least one incident wave, an image sensor positioned to receive at least one scattered light wave obtained by diffraction of the incident wave on the object and a reference wave from the source and not diffracted on the object and to generate a holographic image, and a computer data processing device to digitally reconstruct the object based at least on the holographic image and the wavelength ?. The device also comprises a support comprising patterns organized to form at least one diffraction grating, the grating being periodic and having a pitch P, such that ?/2?P?2?.

Abstract: A method for projecting a particle beam onto a substrate, the method includes a step of calculating a correction of the scattering effects of the beam by means of a point spread function modelling the forward scattering effects of the particles; a step of modifying a dose profile of the beam, implementing the correction thus calculated; and a step of projecting the beam, the dose profile of which has been modified, onto the substrate, and being wherein the point spread function is, or comprises by way of expression of a linear combination, a two-dimensional double sigmoid function. A method to e-beam lithography is also provided.

Abstract: A method for projecting a particle beam onto a substrate, the method includes a step of calculating a correction of the scattering effects of the beam by means of a point spread function modelling the forward scattering effects of the particles; a step of modifying a dose profile of the beam, implementing the correction thus calculated; and a step of projecting the beam, the dose profile of which has been modified, onto the substrate, and being wherein the point spread function is, or comprises by way of expression of a linear combination, a two-dimensional double sigmoid function. A method to e-beam lithography is also provided.

Abstract: Electrostatic lenses for focusing a beam of charged particles, and in particular an electron beam, are used especially in the electron guns of electron microscopes or electron-beam lithography apparatuses. The present disclosure improves the possibilities for focusing the particle beam, in particular an electron beam emitted by a cathode. The lens comprises at least one conducting electrode having at least one through-opening for the passage of an electron beam. Different electric fields are set up upstream and downstream of the opening. The passage opening is at least partially closed by a planar or curved thin membrane of semi-conducting material that is transparent to electrons and has a high dielectric permittivity. Structuring the membrane (holes or thickened portions of electrodes deposited on the membrane) makes it possible to correct lens aberration defects.

Abstract: In the field of resolution test charts for analysis of the resolution of X-ray tomography systems, a test chart comprises a substrate bearing X-ray absorbent zones, with widths and spacings to allow measurement of the system resolution. To avoid shadow effects when the X-ray illumination beam is divergent and when the absorbent zones have a large height/width ratio (from 2 to 5 for example), the absorbent zones in the diverse points of the pattern have a shape of which a general direction of elevation with respect to the surface of the substrate is rotated toward a point of convergence which is the same for all absorbent zones. The X-ray source is placed at the convergence point, eliminating shadow effects. The oblique elevation can be obtained by specific etching steps, or curvature of the substrate after fabrication of the absorbent patterns, or else by use of two superimposed partial test charts.

Abstract: Electrostatic lenses for focusing a beam of charged particles, and in particular an electron beam, are used especially in the electron guns of electron microscopes or electron-beam lithography apparatuses. The present disclosure improves the possibilities for focusing the particle beam, in particular an electron beam emitted by a cathode. The lens comprises at least one conducting electrode having at least one through-opening for the passage of an electron beam. Different electric fields are set up upstream and downstream of the opening. The passage opening is at least partially closed by a planar or curved thin membrane of semi-conducting material that is transparent to electrons and has a high dielectric permittivity. Structuring the membrane (holes or thickened portions of electrodes deposited on the membrane) makes it possible to correct lens aberration defects.

Abstract: In the field of very high-energy (50 keV or more) electron-beam lithography, a layer to be patterned by lithography is borne by a holding structure that comprises a substrate (for example made of silicon) and an intermediate layer made of a porous material of density lower than that of the same but non-porous material, this material, notably silicon or carbon nanotubes, having a low atomic number, lower than 32 and preferably lower than 20. This structure decreases the influence of backscattered electrons on high-resolution lithographic patterns.

Abstract: In the field of resolution test charts for analysis of the resolution of X-ray tomography systems, a test chart comprises a substrate bearing X-ray absorbent zones, with widths and spacings to allow measurement of the system resolution. To avoid shadow effects when the X-ray illumination beam is divergent and when the absorbent zones have a large height/width ratio (from 2 to 5 for example), the absorbent zones in the diverse points of the pattern have a shape of which a general direction of elevation with respect to the surface of the substrate is rotated toward a point of convergence which is the same for all absorbent zones. The X-ray source is placed at the convergence point, eliminating shadow effects. The oblique elevation can be obtained by specific etching steps, or curvature of the substrate after fabrication of the absorbent patterns, or else by use of two superimposed partial test charts.

Abstract: The cavity has first and second main walls covered by a photoresist. The photoresist is subjected to electronic or electromagnetic radiation of wavelength comprised between 12.5 nm and 15 nm. A first thickness of the photoresist is exposed to form a first area of sacrificial material and a second area of different nature defining the surface coating. The sacrificial material is removed, the surface coating is formed and has a surface against one of the main walls and a free opposite surface. The lateral dimensions of the surface coating are defined in the cavity by the radiation through the first main wall.

Abstract: A method for determining a minimum tension compensation stress which will have a membrane of a thickness of less than or equal to one micrometer, secured to a frame, having, in the absence of any external stress, a desired deflection. The membrane can be made as planar as possible in absence of any external stress, and its thickness can be less than or equal to one micrometer.

Abstract: A method for determining a minimum tension compensation stress which will have a membrane of a thickness of less than or equal to one micrometer, secured to a frame, having, in the absence of any external stress, a desired deflection. The membrane can be made as planar as possible in absence of any external stress, and its thickness can be less than or equal to one micrometer.

Abstract: The cavity has first and second main walls covered by a photoresist. The photoresist is subjected to electronic or electromagnetic radiation of wavelength comprised between 12.5 nm and 15 nm. A first thickness of the photoresist is exposed to form a first area of sacrificial material and a second area of different nature defining the surface coating. The sacrificial material is removed, the surface coating is formed and has a surface against one of the main walls and a free opposite surface. The lateral dimensions of the surface coating are defined in the cavity by the radiation through the first main wall.

Abstract: The invention relates to extreme ultraviolet photolithography masks that operate in reflection. These masks comprise a lower mirror covering a substrate, and two types of reflecting zones Z1 and Z2 in order to form a phase shift mask. An etch stop layer is interposed between the lower mirror and an upper reflective structure. This layer has a thickness such that it behaves like a reflective resonant cavity surrounded by the upper and lower reflective structures.

Abstract: The invention relates to extreme ultraviolet photolithography masks operating in reflection. These masks comprise a lower mirror (22) covering a substrate (20), and absorbent zones formed on the lower mirror in an etched pattern that defines the pattern to be reproduced. According to the invention, the absorbent zones are formed by resonant Fabry-Pérot cavities exhibiting a strong absorption peak for the operating wavelength. The cavities are formed by the lower mirror (22), an upper mirror (24) and, between the mirrors, a transparent medium, the thickness of which is calculated so as to produce an absorption peak at the operating wavelength. The medium may be formed from silicon (27) or by a superposition of a thin silicon oxide layer (forming a buffer layer to facilitate etching) and a silicon layer.

Abstract: The invention relates to extreme ultraviolet photolithography masks operating in reflection. These masks comprise a lower mirror (22) covering a substrate (20), and absorbent zones formed on the lower mirror in an etched pattern that defines the pattern to be reproduced. According to the invention, the absorbent zones are formed by resonant Fabry-Pérot cavities exhibiting a strong absorption peak for the operating wavelength. The cavities are formed by the lower mirror (22), an upper mirror (24) and, between the mirrors, a transparent medium, the thickness of which is calculated so as to produce an absorption peak at the operating wavelength. The medium may be formed from silicon (27) or by a superposition of a thin silicon oxide layer (forming a buffer layer to facilitate etching) and a silicon layer.

Abstract: The invention relates to extreme ultraviolet photolithography masks that operate in reflection. These masks comprise a lower mirror covering a substrate, and two types of reflecting zones Z1 and Z2 in order to form a phase shift mask. An etch stop layer is interposed between the lower mirror and an upper reflective structure. This layer has a thickness such that it behaves like a reflective resonant cavity surrounded by the upper and lower reflective structures.