Abstract: An apparatus comprising: a cascode arrangement comprising two or more transistors, the cascode arrangement coupled between a supply voltage terminal for receiving a supply voltage from a battery and a ground terminal, and a bias voltage generator configured to provide a bias voltage to at least one of the two or more transistors of the cascode arrangement to bias the cascode arrangement, the bias voltage generator further configured to increase the bias voltage with increasing supply voltage at a first rate over a first supply voltage range and increase the bias voltage with increasing supply voltage at a second rate, greater than the first rate, over a second supply voltage range, wherein the second supply voltage range comprises a range of voltages greater than the first supply voltage range.

Abstract: A temperature correction circuit and method for maintaining a transistor of a power amplifier in a linear operating region of the transistor. The temperature correction circuit includes a first current source circuit operable to provide a first correction current proportional to an absolute temperature of a semiconductor die including the transistor. The temperature correction circuit also includes a second current source circuit operable to provide a second correction current proportional to a change in temperature of a part of the semiconductor die in which the transistor is located during operation of the transistor. The temperature correction circuit further includes a third current source circuit operable to provide a gain selection current. The temperature correction circuit also includes circuitry for producing a reference current from the first and second correction currents and the gain current.

Abstract: A temperature correction circuit and method for maintaining a transistor of a power amplifier in a linear operating region of the transistor. The temperature correction circuit includes a first current source circuit operable to provide a first correction current proportional to an absolute temperature of a semiconductor die including the transistor. The temperature correction circuit also includes a second current source circuit operable to provide a second correction current proportional to a change in temperature of a part of the semiconductor die in which the transistor is located during operation of the transistor. The temperature correction circuit further includes a third current source circuit operable to provide a gain selection current. The temperature correction circuit also includes circuitry for producing a reference current from the first and second correction currents and the gain current.

Abstract: The invention proposes a radio frequency circuit which comprises a transformer with a first primary circuit, a second primary circuit, and a secondary circuit, the secondary circuit comprising an integrated first inductor, this first inductor being positioned, on an axis orthogonal to a surface of the circuit, between an integrated second and third inductor respectively comprised in the first primary circuit and second primary circuit.

Abstract: The invention proposes a radio frequency circuit which comprises a transformer with a first primary circuit, a second primary circuit, and a secondary circuit, the secondary circuit comprising an integrated first inductor, this first inductor being positioned, on an axis orthogonal to a surface of the circuit, between an integrated second and third inductor respectively comprised in the first primary circuit and second primary circuit.

Abstract: An inductor assembly includes a first inductor, a second inductor being magnetically coupled to the first inductor, and a third inductor being magnetically coupled to said first and second inductors. The third inductor may be connected to a variable resistor adapted for adjusting the magnetic coupling between the first and the second inductors by varying a resistance value of said variable resistor.

Abstract: An inductor assembly includes a first inductor, a second inductor being magnetically coupled to the first inductor, and a third inductor being magnetically coupled to said first and second inductors. The third inductor may be connected to a variable resistor adapted for adjusting the magnetic coupling between the first and the second inductors by varying a resistance value of said variable resistor.

Abstract: A method of adjusting a signal quality target at a transceiver of a CDMA radio communication network. The adjustment of the signal quality target ensures that a predefined frame quality target is reached in power control procedure. According to the invention, the method consists in computing for a received frame, a frame quality indicator depending on signal quality indicators measured at slot level in the received frame. The method further comprises a step of adjusting the signal quality target according to the difference between the frame quality indicator and the predefined frame quality target.

Abstract: The present invention concerns a downlink power control method for adjusting, in a cellular radiocommunication network, the power transmitted by base stations (BS), received with at least a preset minimal power level by a given mobile terminal (MT), towards said mobile terminal (MT), consisting in adjusting, preferably repeatedly, the downlink power level of each of said base stations (BS) according to a specific power distribution criterion, while ensuring a desired communication quality level at said mobile terminal (MT).

Abstract: The invention relates to an electronic component comprising a package PACK including input pins PIi and output pins PSj, and an integrated circuit IC, encased in the package PACK, which integrated circuit is provided with input contact pads CIi and output contact pads CIj, which are connected, respectively, to the input pins PIi and the output pins PSj of the package PACK by conducting wires WIi and WSj. In accordance with the invention, each current path connecting an input contact pad CIi to an output contact pad CIj comprises a buffer element Bi having a high input impedance. Said high input impedance of the buffers substantially reduces the value of the current Ii flowing through the conducting wires WIi connecting the input pins PIi to the input contact pads CIi, and hence the inductive coupling between said conducting wires.

Abstract: The present invention concerns a downlink power control method for adjusting, in a cellular radiocommunication network, the power transmitted by base stations (BS), received with at least a preset minimal power level by a given mobile terminal (MT), towards said mobile terminal (MT), consisting in adjusting, preferably repeatedly, the downlink power level of each of said base stations (BS) according to a specific power distribution criterion, while ensuring a desired communication quality level at said mobile terminal (MT).

Abstract: This invention relates to a method of modifying a current transmitted power distribution used by at least two base stations transmitting a signal to a mobile station on the macro-diversity principle. A mobile station using this method is also disclosed. According to the invention, the method consists substituting the current transmitted power distribution by a new transmitted power distribution, selected among several hypothetical transmitted power distributions, under the condition that this new transmitted power distribution provides a better quality of service at the mobile station than the current one.

Abstract: The invention relates to a method of controlling the transmission power of terminals in a CDMA type cellular network. According to the invention, when the transmission power of a number n1 of terminals is authorized to be increased by a total amount P dB, a number n2 of terminals benefitting from better quality of transmission in the up direction are requested to decrease their total transmission power by P dB. This makes it possible to conserve interference at a constant level in the transmission network, either within a single cell, or within a group of cells.

Abstract: A semiconductor device microwave integrated circuit includes at least a transistor stage which stage includes a microwave matching circuit and a d.c. bias circuit interconnected at a link node (A). The transistor stage further includes a stabilizing circuit which includes an open stub line connected to the link node. The open stub line connected to the link node is a .lambda./4 line which at the operating frequency imposes a short circuit on the link node. A matching circuit made up of a low-value resistor connected to ground in the microwave mode through a d.c. isolating capacitor is connected to the link node. A .lambda./4 line of the radial type (.lambda./4 radial stub) provides broadband operation.

Abstract: Microwave frequency device comprising at least a transition between a transmission line (24) integrated on a substrate (23) of a hard material, disposed in a first microwave frequency cavity (31), and waveguides (100) having a second microwave frequency cavity (102a, 102b). This transition comprises an open end (25a, 25b) of the integrated line which end forms a probe inserted over a length l into the cavity of the waveguide, at a distance D from a short-circuit (42a, 42b) which closes off the end of the waveguide.