Abstract: Organic light-emitting diode comprising a lower electrode and an upper electrode, an organic electroluminescent layer and at least one doped organic layer in contact with one of said electrodes. According to the invention, the doping level of this organic layer is higher at the interface with the electrode than in the core of this layer. Thanks to the invention, the luminous efficiency of the diode is very substantially improved.

Abstract: Organic light-emitting diode comprising a lower electrode (2) and an upper electrode (8), an organic electroluminescent layer (5) and at least one doped organic layer (3; 7) in contact with one of said electrodes. According to the invention, the doping level of this organic layer is higher at the interface with the electrode than in the core of this layer (3). Thanks to the invention, the luminous efficiency of the diode is very substantially improved.

Abstract: The optical storage medium comprises a substrate layer, a data layer arranged on the substrate layer, a first nonlinear layer with a first super-resolution structure arranged above the data layer, and a second nonlinear layer with a second super-resolution structure arranged above the first nonlinear layer, the first nonlinear layer comprising a material having an increased reflectivity when irradiated with a laser beam and the second nonlinear layer comprising a material showing a transparency when irradiated with a laser beam. The first nonlinear layer comprises in particular a semiconductor material of one of the III-V semiconductor family having a low band-gap. And the second nonlinear layer comprises in particular a phase change material, for example SbTe or AIST.

Abstract: The optical storage medium comprises a substrate layer, a read-only data layer with a pit structure disposed on the substrate layer, a cover layer and a nonlinear layer with a super-resolution structure disposed between the data layer and the data layer, which super-resolution structure includes a semiconductor material and grainy impurities of a dielectric material, wherein the semiconductor material has an increased reflectivity, when irradiated with a laser beam, and wherein the dielectric material is arranged as a dielectric layer having a thickness below 5 nm. The dielectric material consists advantageously of an inhomogeneous layer of a nitride material, for example GeN, arranged between a first and a second nonlinear layer.

Abstract: The recordable optical storage medium comprises a substrate layer, a data layer and a first and a second protection layer for the data layer, wherein the data layer comprises a semiconductor layer and a dopant layer with a doping material usable for doping the semiconductor layer. The semiconductor layer is in particular an intrinsic or essentially intrinsic semiconductor layer having a low reflectivity and the doping material of the dopant layer is selected such, that the reflectivity of the semiconductor layer is increased, when doping material of the dopant layer is diffused into the semiconductor layer.

Abstract: The optical storage medium comprises a substrate layer, a data layer arranged on the substrate layer, a first nonlinear layer with a first super-resolution structure arranged above the data layer, and a second nonlinear layer with a second super-resolution structure arranged above the first nonlinear layer, the first nonlinear layer comprising a material having an increased reflectivity when irradiated with a laser beam and the second nonlinear layer comprising a material showing a transparency when irradiated with a laser beam. The first nonlinear layer comprises in particular a semiconductor material of one of the III-V semiconductor family having a low band-gap. And the second nonlinear layer comprises in particular a phase change material, for example SbTe or AIST.

Abstract: A compatible optical recording medium is described, which is designed in such a way that it has the appearance of a read-only optical recording medium for most players and recorders. Further described is a method for manufacturing the recordable optical recording medium. The optical recording medium has an essentially flat recording layer with a first reflectivity at a wavelength specified for a reading recording light beam, which has an alloyed guide track formed of the material of the essentially flat recording layer with a second reflectivity different from the first reflectivity at the specified wavelength.

Abstract: The optical storage medium comprises a substrate layer, a data layer, and a nonlinear layer with a super-resolution structure disposed on the data layer, wherein pits and lands having a size above a diffraction limit of a pickup for reading of the data establish a first and a second level of the data layer, and pits and lands having a size below the diffraction limit of the pickup are arranged on a further level of the data layer. In a preferred embodiment, pits having a size below the diffraction limit are arranged on a third level and lands having a size below the diffraction limit are arranged on a fourth level of the data layer. The optical storage medium is in particular a read-only optical disc comprising a phase-change material, for example AgInSbTe, for providing the super-resolution effect.

Abstract: The optical storage medium comprises a substrate layer, a data layer having a pit/land data structure with data arranged in tracks on the substrate layer, and a nonlinear layer with a super-resolution structure disposed on the data layer, wherein a land having a size below the diffraction limit is inverted to a pit and enclosed by auxiliary lands, and a pit having a size below the diffraction limit is inverted to a land and enclosed by auxiliary pits. The optical storage medium is in particular a read-only optical disc comprising a phase-change material, for example AgInSbTe, for providing the super-resolution effect.

Abstract: The optical storage medium according to the invention uses a mask layer as a super resolution near field structure, which comprises a doped semiconductor material. The semiconductor material is n-doped particularly such that the reflectivity of the semiconductor material is increased, when irradiated with a laser beam. As a semiconductor material advantageously an indium alloy and as a doping material selenium or tellurium can be used. For the manufacturing of a respective optical storage medium a sputtering method for depositing the doped semiconductor material as the mask layer can be used, wherein the dopant is included already in the semiconductor sputtering target.

Abstract: The diode comprises an organic electroluminescent layer interposed between a lower electrode and a partially transparent and semireflective upper electrode, which itself comprises a transparent conducting sublayer and a current-distributing metal sublayer, for example an opaque grid. A dielectric antireflection layer is deposited on the grid to improve the emission contrast in ambient light, which grid, according to an advantageous embodiment, is designed to optimize the semireflective properties of the upper electrode, thereby improving, by an optical cavity effect, extraction of the emitted light.

Abstract: According to the invention, the extractor is a reflection concentrator. The entry section of the extractor has a larger area than its exit section. The reflecting side walls of the extractor have a suitable shape so that it makes an angle called the cut-off angle ?lim, which corresponds to a limiting wavelength ?C-lim for transmission from this extractor for a given optical cavity. Applied to diode-based image displays, the invention broadens the viewing angles and improves the colour purity of the images displayed.

Abstract: The optical storage medium comprises a substrate layer, and a data layer disposed on the substrate layer, the data layer comprising data being arranged in tracks as marks and spaces. A protection code is coded in one of the tracks or a part of a track which code comprises marks of a first size and marks of a smaller, second size. The marks of the second size have in particular a width being smaller than the width of the marks of the first size. To obtain the protection code, a method is used comprising the steps of reading a track or a part of a track with a first laser power for obtaining a first data signal, reading the same track or the same part of a track in another step with a second laser power being different from the first laser power for obtaining a second data signal, and calculating the protection code by taking into account the first and the second data signals. The protection code may be calculated for example by a microprocessor of a respective data reading apparatus.

Abstract: A compatible optical recording medium is described, which is designed in such a way that it has the appearance of a read-only optical recording medium for most players and recorders. Further described is a method for manufacturing the recordable optical recording medium. The optical recording medium has an essentially flat recording layer with a first reflectivity at a wavelength specified for a reading recording light beam, which has an alloyed guide track formed of the material of the essentially flat recording layer with a second reflectivity different from the first reflectivity at the specified wavelength.

Abstract: The optical storage medium comprises a substrate layer, a read-only data layer with a pit structure disposed on the substrate layer, a cover layer and a nonlinear layer with a super-resolution structure disposed between the data layer and the data layer, which super-resolution structure includes a semiconductor material and grainy impurities of a dielectric material, wherein the semiconductor material has an increased reflectivity, when irradiated with a laser beam, and wherein the dielectric material is arranged as a dielectric layer having a thickness below 5 nm. The dielectric material consists advantageously of an inhomogeneous layer of a nitride material, for example GeN, arranged between a first and a second nonlinear layer.

Abstract: The optical storage medium comprises a substrate layer, a data layer having a pit/land data structure with data arranged in tracks on the substrate layer, and a nonlinear layer with a super-resolution structure disposed on the data layer, wherein a land having a size below the diffraction limit is inverted to a pit and enclosed by auxiliary lands, and a pit having a size below the diffraction limit is inverted to a land and enclosed by auxiliary pits. The optical storage medium is in particular a read-only optical disc comprising a phase-change material, for example AgInSbTe, for providing the super-resolution effect.

Abstract: The optical storage medium comprises a substrate layer, a data layer, and a nonlinear layer with a super-resolution structure disposed on the data layer, wherein pits and lands having a size above a diffraction limit of a pickup for reading of the data establish a first and a second level of the data layer, and pits and lands having a size below the diffraction limit of the pickup are arranged on a further level of the data layer. In a preferred embodiment, pits having a size below the diffraction limit are arranged on a third level and lands having a size below the diffraction limit are arranged on a fourth level of the data layer. The optical storage medium is in particular a read-only optical disc comprising a phase-change material, for example AgInSbTe, for providing the super-resolution effect.

Abstract: Diode comprising a substrate and an organic electroluminescent layer interposed between a lower electrode and an upper electrode, at least one of which electrodes is formed from a multilayer which is itself formed by the stack of adjacent sublayers made of amorphous carbon, having different refractive indices n1, n2. The amorphous carbon contains no added silicon, thereby making it possible to avoid using silane for the manufacture. The multilayer provides an electrode function, a multimirror function and an encapsulation function.

Abstract: The recordable optical storage medium comprises a substrate layer, a data layer and a first and a second protection layer for the data layer, wherein the data layer comprises a semiconductor layer and a dopant layer with a doping material usable for doping the semiconductor layer.

Abstract: The optical storage medium according to the invention uses a mask layer as a super resolution near field structure, which comprises a doped semiconductor material. The semiconductor material is n-doped particularly such that the reflectivity of the semiconductor material is increased, when irradiated with a laser beam. As a semiconductor material advantageously an indium alloy and as a doping material selenium or tellurium can be used. For the manufacturing of a respective optical storage medium a sputtering method for depositing the doped semiconductor material as the mask layer can be used, wherein the dopant is included already in the semiconductor sputtering target.