Abstract: A process comprises the following steps: a) provision of a chamber suitable for receiving a plurality of structures, b) circulation of a gas stream in the chamber so that the chamber has a non-oxidizing atmosphere, c) heat treatment of the plurality of structures at a temperature above a threshold value above which the oxygen present in an oxide of a dielectric diffuses through an active layer reacts with semiconductor material of the active layer and produces a volatile material, the process being noteworthy in that the step b) is carried out so that the gas stream has a rate of circulation between the plurality of structures greater than the rate of diffusion of the volatile material into the gas stream.

Abstract: A support device that has a central axis and includes three uprights extending substantially parallel to the central axis, a plurality of series of support members spaced along the central axis, each series of support members comprising three support members adapted to support one wafer of the plurality of wafers and extending in different essentially longitudinal directions transverse to the central axis, each support member being mounted directly on a separate upright, this support device being remarkable in that the directions of the three support members of each series of support members are concurrent at a point on the central axis.

Abstract: The present disclosure relates to a process for fabricating a plurality of semiconductor-on-insulator structures, the insulator being a layer of silicon dioxide having a thickness smaller than 50 nm, each structure comprising a semiconductor layer placed on the silicon dioxide layer, the fabrication process comprising a step of heat treating the plurality of structures, which heat treatment step is designed to partially dissolve the silicon dioxide layer, the heat treatment step being carried out in a non-oxidizing atmosphere and the pressure of the non-oxidizing atmosphere being lower than 0.1 bar.

Abstract: The invention relates to a method for fabricating a composite structure comprising a layer to be separated by irradiation, the method comprising the formation of a stack containing: a support substrate formed from a material that is at least partially transparent at a determined wavelength; a layer to be separated; and a separation layer interposed between the support substrate and the layer to be separated, the separation layer being adapted to be separated by exfoliation under the action of radiation having a wavelength corresponding to the determined wavelength. Furthermore, the method comprises, during the step for forming the composite structure, a treatment step modifying the optical properties in reflection at an interface between the support substrate and the separation layer or on an upper face of the support substrate.

Abstract: A process comprises the following steps: a) provision of a chamber suitable for receiving the plurality of structures, b) circulation of a gas stream in the chamber so that the chamber has a non-oxidizing atmosphere, c) heat treatment of the plurality of structures at a temperature above a threshold value above which the oxygen present in the oxide of the dielectric diffuses through the active layer reacts with the semiconductor material of the active layer and produces a volatile material, the process being noteworthy in that the step b) is carried out so that the gas stream has a rate of circulation between the plurality of structures greater than the rate of diffusion of the volatile material into the gas stream.

Abstract: A method for measuring defects in a silicon substrate obtained by silicon ingot pulling, wherein the defects have a size of less than 20 nm. The method includes applying a first defect consolidation heat treatment to the substrate at a temperature of between 750° C. and 850° C. for a time period of between 30 minutes and 1 hour to consolidate the defects; applying a second defect enlargement heat treatment to the substrate at a temperature of between 900° C. and 1000° C. for a time period of between 1 hour and 10 hour hours to enlarge the defects to a size of greater than or equal to 20 nm, with the enlarged defects containing oxygen precipitates; measuring size and density of the enlarged defects in a surface layer of the substrate; and calculating the initial size of the defects on the basis of the measurements of the enlarged defects.

Abstract: The present disclosure relates to a process for fabricating a plurality of semiconductor-on-insulator structures, the insulator being a layer of silicon dioxide having a thickness smaller than 50 nm, each structure comprising a semiconductor layer placed on the silicon dioxide layer, the fabrication process comprising a step of heat treating the plurality of structures, which heat treatment step is designed to partially dissolve the silicon dioxide layer, the heat treatment step being carried out in a non-oxidizing atmosphere and the pressure of the non-oxidizing atmosphere being lower than 0.1 bar.

Abstract: This support device has a central axis and includes: three uprights extending substantially parallel to the central axis, a plurality of series of support members spaced along the central axis, each series of support members comprising three support members adapted to support one wafer of the plurality of wafers and extending in different essentially longitudinal directions transverse to the central axis, each support member being mounted directly on a separate upright, this support device being remarkable in that the directions of the three support members of each series of support members are concurrent at a point on the central axis.

Abstract: A method for curing defects associated with the implantation of atomic species into a semiconductor layer transferred onto a receiver substrate, wherein the semiconductor layer is thermally insulated from the receiver substrate by a low thermal conductivity layer having thermal conductivity that is lower than that of the transferred semiconductor layer. The method includes applying a selective electromagnetic irradiation to the semiconductor layer to heat that layer to a temperature lower than its temperature of fusion to cure defects without causing an increase in the temperature of the receiver substrate beyond 500° C.

Abstract: The invention relates to a method for fabricating a composite structure comprising a layer to be separated by irradiation, the method comprising the formation of a stack containing: a support substrate formed from a material that is at least partially transparent at a determined wavelength; a layer to be separated; and a separation layer interposed between the support substrate and the layer to be separated, the separation layer being adapted to be separated by exfoliation under the action of radiation having a wavelength corresponding to the determined wavelength. Furthermore, the method comprises, during the step for forming the composite step, a treatment step modifying the optical properties in reflection at the interface between the support substrate and the separation layer or on the upper face of the support substrate.

Abstract: A method for curing defects associated with the implantation of atomic species into a semiconductor layer transferred onto a receiver substrate, wherein the semiconductor layer is thermally insulated from the receiver substrate by a low thermal conductivity layer having thermal conductivity that is lower than that of the transferred semiconductor layer. The method includes applying a selective electromagnetic irradiation to the semiconductor layer to heat that layer to a temperature lower than its temperature of fusion to cure defects without causing an increase in the temperature of the receiver substrate beyond 500° C.