Patents by Inventor Christophe GRANGIER

Christophe GRANGIER has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Support for forming an optoelectronic component, optoelectronic component and method for manufacturing such a support and such a component
    Patent number: 10923524
    Abstract: The invention relates to a method for manufacturing a first support (100) for forming, in particular with a functionalised second support (200), an optoelectronic component (1), the first support (100) comprising a semiconductor layer (110) and an alignment mark (140) provided on said semiconductor layer (110). The manufacturing method includes in particular a step of forming an aperture (141) in a semiconductor layer (110) comprising cadmium, a step of diffusing cadmium in a second location (142) of the aperture (141) and a cadmium sensitive etching step for promoting etching of one from the second location (142) which is rich in cadmium and the rest of a surface (110B) of the semiconductor layer (110). The invention also relates to a first support (100).
    Type: Grant
    Filed: April 2, 2019
    Date of Patent: February 16, 2021
    Assignee: COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES
    Inventors: Francois Boulard, Christophe Grangier
  • SUPPORT FOR FORMING AN OPTOELECTRONIC COMPONENT, OPTOELECTRONIC COMPONENT AND METHOD FOR MANUFACTURING SUCH A SUPPORT AND SUCH A COMPONENT
    Publication number: 20190305017
    Abstract: The invention relates to a method for manufacturing a first support (100) for forming, in particular with a functionalised second support (200), an optoelectronic component (1), the first support (100) comprising a semiconductor layer (110) and an alignment mark (140) provided on said semiconductor layer (110). The manufacturing method includes in particular a step of forming an aperture (141) in a semiconductor layer (110) comprising cadmium, a step of diffusing cadmium in a second location (142) of the aperture (141) and a cadmium sensitive etching step for promoting etching of one from the second location (142) which is rich in cadmium and the rest of a surface (110B) of the semiconductor layer (110). The invention also relates to a first support (100).
    Type: Application
    Filed: April 2, 2019
    Publication date: October 3, 2019
    Applicant: COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES
    Inventors: Francois BOULARD, Christophe GRANGIER