Patents by Inventor Christophe Hoareau

Christophe Hoareau has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Reducing voltage non-linearity in a bridge having tunneling magnetoresistance (TMR) elements
    Patent number: 11525875
    Abstract: In one aspect, a magnetic field sensor includes a plurality of tunneling magnetoresistance (TMR) elements that includes a first TMR element, a second TMR element, a third TMR element and a fourth TMR element. The first and second TMR elements are connected to a voltage source and the third and fourth TMR elements are connected to ground. Each TMR element has a pillar count of more than one pillar and the pillar count is selected to reduce the angle error below 1.0°.
    Type: Grant
    Filed: October 15, 2021
    Date of Patent: December 13, 2022
    Assignee: Allegro MicroSystems, LLC
    Inventors: Rémy Lassalle-Balier, Pierre Belliot, Christophe Hoareau, Jean-Michel Daga
  • REDUCING VOLTAGE NON-LINEARITY IN A BRIDGE HAVING TUNNELING MAGNETORESISTANCE (TMR) ELEMENTS
    Publication number: 20220043082
    Abstract: In one aspect, a magnetic field sensor includes a plurality of tunneling magnetoresistance (TMR) elements that includes a first TMR element, a second TMR element, a third TMR element and a fourth TMR element. The first and second TMR elements are connected to a voltage source and the third and fourth TMR elements are connected to ground. Each TMR element has a pillar count of more than one pillar and the pillar count is selected to reduce the angle error below 1.0°.
    Type: Application
    Filed: October 15, 2021
    Publication date: February 10, 2022
    Applicant: Allegro MicroSystems, LLC
    Inventors: Rémy Lassalle-Balier, Pierre Belliot, Christophe Hoareau, Jean-Michel Daga
  • Reducing voltage non-linearity in a bridge having tunneling magnetoresistance (TMR) elements
    Patent number: 11175359
    Abstract: In one aspect, a magnetic field sensor includes a plurality of tunneling magnetoresistance (TMR) elements that includes a first TMR element, a second TMR element, a third TMR element and a fourth TMR element. The first and second TMR elements are connected to a voltage source and the third and fourth TMR elements are connected to ground. Each TMR element has a pillar count of more than one pillar and the pillar count is selected to reduce the angle error below 1.0°.
    Type: Grant
    Filed: August 28, 2019
    Date of Patent: November 16, 2021
    Assignee: ALLEGRO MICROSYSTEMS, LLC
    Inventors: Rémy Lassalle-Balier, Pierre Belliot, Christophe Hoareau, Jean-Michel Daga
  • REDUCING VOLTAGE NON-LINEARITY IN A BRIDGE HAVING TUNNELING MAGNETORESISTANCE (TMR) ELEMENTS
    Publication number: 20210063501
    Abstract: In one aspect, a magnetic field sensor includes a plurality of tunneling magnetoresistance (TMR) elements that includes a first TMR element, a second TMR element, a third TMR element and a fourth TMR element. The first and second TMR elements are connected to a voltage source and the third and fourth TMR elements are connected to ground. Each TMR element has a pillar count of more than one pillar and the pillar count is selected to reduce the angle error below 1.0°.
    Type: Application
    Filed: August 28, 2019
    Publication date: March 4, 2021
    Applicant: ALLEGRO MICROSYSTEMS, LLC
    Inventors: Rémy Lassalle-Balier, Pierre Belliot, Christophe Hoareau, Jean-Michel Daga