Abstract: An image sensor including a plurality of pixels, each pixel including a photodetector coupled to a control circuit, the photodetector being formed inside and on top of a first semiconductor substrate, and the control circuit including at least one first MOS transistor formed inside and on top of a second semiconductor substrate arranged on the first substrate, the sensor being intended to be illuminated on the side of the surface of the first substrate opposite to the second substrate, the sensor further comprising a shield arranged between the first and second substrates and extending over substantially the entire surface of the sensor, said shield including at least one electrically-conductive layer.

Abstract: An image sensor including a plurality of pixels, each pixel including a photodetector coupled to a control circuit, the photodetector being formed inside and on top of a first semiconductor substrate, and the control circuit including at least one first MOS transistor formed inside and on top of a second semiconductor substrate arranged on the first substrate, the sensor being intended to be illuminated on the side of the surface of the first substrate opposite to the second substrate, the sensor further comprising a shield arranged between the first and second substrates and extending over substantially the entire surface of the sensor, said shield including at least one electrically-conductive layer.

Abstract: A method of preparation and optical analysis of a solid sample by multiple internal reflection infrared spectroscopy comprising: obtaining a least one substrate that is transparent to infrared light and comprises at least a main front face and a main rear face; producing at least one solid sample on the main front face of the substrate; installing around at least one part of the sample an element comprising a chamber having an aperture that opens onto the solid sample and defines a leaktight interaction zone (Zi) in relation to the outside of the chamber; feeding the chamber with a fluid with controlled parameters to control the environment in the leaktight interaction zone; sending an infrared light beam through the substrate; and recovering the beam after it has undergone multiple internal reflections in the substrate.

Abstract: A method of preparation and optical analysis of a solid sample by multiple internal reflection infrared spectroscopy comprising: obtaining a least one substrate that is transparent to infrared light and comprises at least a main front face and a main rear face; producing at least one solid sample on the main front face of the substrate; installing around at least one part of the sample an element comprising a chamber having an aperture that opens onto the solid sample and defines a leaktight interaction zone (Zi) in relation to the outside of the chamber; feeding the chamber with a fluid with controlled parameters to control the environment in the leaktight interaction zone; sending an infrared light beam through the substrate; and recovering the beam after it has undergone multiple internal reflections in the substrate.

Abstract: An optical characterization method of repeat units forming a diffraction structure, each repeat unit including a geometric pattern produced, at least in part, using a porous material, the method including: determining the geometric parameters of the patterns; performing a scatterometric acquisition using an optical measurement system of the experimental optical response of the diffraction structure placed in a chamber at a given pressure, a presence of an adsorbable gaseous substance in the chamber causing condensation of the adsorbable gaseous substance in a part of open pores of the patterns; and determining a theoretical optical response of the diffraction structure from the determined geometric parameters and by adjusting an optical index of the material of an area of each of the patterns, in which the adsorbable gaseous substance has condensed, to make a difference between the experimental response and the theoretical response less than or equal to a given threshold.

Abstract: A method for the optical characterisation of repeat units repeated in a regular manner so as to form a diffraction structure, each repeat unit including at least one geometric pattern, each of the patterns being produced, at least in part, using a porous material. The method includes determining the geometric parameters of the patterns and performing a scatterometric acquisition of the experimental optical response of the diffraction structure placed in a chamber at a given pressure, the presence of an adsorbable gaseous substance in the chamber causing condensation of the adsorbable gaseous substance in at least one part of open pores of the patterns of the structure.

Abstract: A first gate, formed on a substrate, is surmounted by a hard layer designed, with first spacers surrounding the first gate, to act as etching mask to bound the channel and a pad that bounds a space subsequently used to form a gate cavity. The hard layer is preferably made of silicon nitride. Before flipping and bonding, a bounding layer, preferably made of amorphous silicon or polysilicon, is formed to bound drain and source areas. After flipping and bonding of the assembly on a second substrate, a second gate is formed in the gate cavity. At least partial silicidation of the bounding layer is then performed before the metal source and drain electrodes are produced.

Abstract: This invention relates to an improved microelectronic method for making a double gate structure for a transistor, and particularly gate patterns (108a,128a,208a,228a,308a,328a) with a critical dimension less than the critical dimension of the transistor channel zone (104b). This method particularly includes a step to reduce double gate patterns, using isotropic etching. The invention also relates to a microelectronic device obtained using such a method.

Abstract: A first gate, formed on a substrate, is surmounted by a hard layer designed, with first spacers surrounding the first gate, to act as etching mask to bound the channel and a pad that bounds a space subsequently used to form a gate cavity. The hard layer is preferably made of silicon nitride. Before flipping and bonding, a bounding layer, preferably made of amorphous silicon or polysilicon, is formed to bound drain and source areas. After flipping and bonding of the assembly on a second substrate, a second gate is formed in the gate cavity. At least partial silicidation of the bounding layer is then performed before the metal source and drain electrodes are produced.