Patents by Inventor Christophe Mauriac

Christophe Mauriac has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Thyristor optimized for a sinusoidal HF control
    Patent number: 7612387
    Abstract: A vertical thyristor adapted to an HF control, including a cathode region in a P-type base well, a lightly-doped P-type layer next to the base well, a lightly-doped N-type region in the lightly-doped P-type layer, a Schottky contact on the lightly-doped N-type region connected to a control terminal, and a connection between the lightly-doped N-type region and the P-type base well.
    Type: Grant
    Filed: December 15, 2006
    Date of Patent: November 3, 2009
    Assignee: STMicroelectronics S.A.
    Inventors: Christophe Mauriac, Samuel Menard
  • Isolated HF-control SCR switch
    Patent number: 7259407
    Abstract: A vertical SCR switch to be controlled by a high-frequency signal having at least four main alternated layers. The switch includes a gate terminal and a gate reference terminal connected via integrated capacitors to corresponding areas. In the case of a thyristor, having on its front surface side a main P-type semiconductor area formed in an N-type gate semiconductor area, a first portion of the main area being connected to one of the main areas, a second portion of the main area is connected to one of the control terminals via a first integrated capacitor, and a portion of the gate area being connected to the other of the control terminals via a second integrated capacitor.
    Type: Grant
    Filed: October 12, 2004
    Date of Patent: August 21, 2007
    Assignee: STMicroelectronics S.A.
    Inventors: Samuel Menard, Christophe Mauriac
  • Thyristor optimized for a sinusoidal HF control
    Publication number: 20070138502
    Abstract: A vertical thyristor adapted to an HF control, including a cathode region in a P-type base well, a lightly-doped P-type layer next to the base well, a lightly-doped N-type region in the lightly-doped P-type layer, a Schottky contact on the lightly-doped N-type region connected to a control terminal, and a connection between the lightly-doped N-type region and the P-type base well.
    Type: Application
    Filed: December 15, 2006
    Publication date: June 21, 2007
    Applicant: STMicroelectronics S.A.
    Inventors: Christophe Mauriac, Samuel Menard
  • HF-control SCR switch structure
    Patent number: 7161191
    Abstract: A vertical SCR-type switch including a control area having a first control region forming a first diode with a first neighboring region or layer, and a second control region forming a second diode with a second neighboring region or layer. A contact is formed on each of the first and second control regions and on each of the first and second neighboring regions or layers. The contacts are connected to terminals of application of an A.C. control voltage so that, when an A.C. voltage is applied, each of the two diodes is alternately conductive.
    Type: Grant
    Filed: October 12, 2004
    Date of Patent: January 9, 2007
    Assignee: STMicroelectronics S.A.
    Inventors: Samuel Menard, Christophe Mauriac
  • Isolated HF-control SCR switch
    Publication number: 20050082565
    Abstract: A vertical SCR switch to be controlled by a high-frequency signal having at least four main alternated layers. The switch includes a gate terminal and a gate reference terminal connected via integrated capacitors to corresponding areas. In the case of a thyristor, having on its front surface side a main P-type semiconductor area formed in an N-type gate semiconductor area, a first portion of the main area being connected to one of the main areas, a second portion of the main area is connected to one of the control terminals via a first integrated capacitor, and a portion of the gate area being connected to the other of the control terminals via a second integrated capacitor.
    Type: Application
    Filed: October 12, 2004
    Publication date: April 21, 2005
    Applicant: STMicroelectronics S.A.
    Inventors: Samuel Menard, Christophe Mauriac
  • HF-control SCR switch structure
    Publication number: 20050082566
    Abstract: A vertical SCR-type switch including a control area having a first control region forming a first diode with a first neighboring region or layer, and a second control region forming a second diode with a second neighboring region or layer. A contact is formed on each of the first and second control regions and on each of the first and second neighboring regions or layers. The contacts are connected to terminals of application of an A.C. control voltage so that, when an A.C. voltage is applied, each of the two diodes is alternately conductive.
    Type: Application
    Filed: October 12, 2004
    Publication date: April 21, 2005
    Applicant: STMicroelectronics S.A.
    Inventors: Samuel Menard, Christophe Mauriac