Patents by Inventor Christophe Morales

Christophe Morales has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20240150617
    Abstract: A method of direct bonding comprising the following steps: supplying a first substrate and a second substrate, the first substrate being covered by a first hydrophilic surface and the second substrate being covered by a second hydrophilic surface, deposition of a specific molecule on the first hydrophilic surface and/or on the second hydrophilic surface, the specific molecule comprising a hydrophilic functional group and a basic functional group, separated by at least one atom, contacting the first hydrophilic surface with the second hydrophilic surface, whereby the two hydrophilic surfaces are bonded one with the other, and the first substrate and the second substrate are assembled, optionally, application of a bonding annealing heat treatment, preferably at a temperature less than or equal to 500° C.
    Type: Application
    Filed: October 20, 2020
    Publication date: May 9, 2024
    Inventors: Frank Fournel, Aziliz Calvez, Gaelle Eleouet, Vincent Larrey, Christophe Morales
  • Publication number: 20230386891
    Abstract: A method for manufacturing a multilayer structure by direct bonding between a first substrate and a second substrate, the method including the steps of: providing a first substrate and a second substrate respectively including a first bonding surface and a second bonding surface, contacting the first bonding surface and the second bonding surface so as to create a direct bonding interface between the first substrate and the second substrate, placing at least the direct bonding interface in a cationic aqueous solution including deionized water and cationic species originating from at least one element of the first and/or of the second column of the periodic table of elements, and applying a heat treatment at a temperature comprised between 20° C. and 350° C. so as to obtain the multilayer structure.
    Type: Application
    Filed: May 12, 2023
    Publication date: November 30, 2023
    Applicant: COMMISSARIAT À L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES
    Inventors: Frank FOURNEL, Aziliz CALVEZ, Vincent LARREY, Christophe MORALES
  • Publication number: 20230386894
    Abstract: A direct bonding method between two substrates includes the steps of: providing a first substrate and a second substrate respectively including a first hydrophilic bonding surface and a second hydrophilic bonding surface; depositing on the first and/or on the second hydrophilic bonding surface a basic solution consisting of strong base molecules and deionized water; drying the first and/or the second hydrophilic bonding surface until a concentration with between approximately 109 atom/cm2 and 1015 atom/cm2 of cations resulting from the strong base molecules on the first and/or on the second hydrophilic bonding surface; contacting the first and the second hydrophilic bonding surface so as to obtain a spontaneous direct bonding and an assembly of the first substrate with the second substrate including a direct bonding interface.
    Type: Application
    Filed: May 11, 2023
    Publication date: November 30, 2023
    Applicant: COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES
    Inventors: Frank FOURNEL, Aziliz CALVEZ, Vincent LARREY, Christophe MORALES
  • Publication number: 20230387070
    Abstract: A method for manufacturing a multilayer structure by direct bonding between a first substrate and a second substrate includes the steps of: a) providing a first substrate and a second substrate respectively including a first bonding surface and a second bonding surface, b) bringing the first bonding surface and the second bonding surface into contact so as to create a direct bonding interface between the first substrate and the second substrate, c) disposing at least the direct bonding interface in a basic environment, and d) applying a thermal treatment at a temperature of between 20° C. and 350° C. so as to obtain the multilayer structure.
    Type: Application
    Filed: May 17, 2023
    Publication date: November 30, 2023
    Applicant: COMMISSARIAT À L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES
    Inventors: Frank FOURNEL, Aziliz CALVEZ, Vincent LARREY, Christophe MORALES
  • Publication number: 20230207515
    Abstract: A method of preparation of a first surface of an electronic component, the first surface being intended to be bonded to another electronic component by a direct bonding and the first surface having previously been submitted to a surface treatment in an atmosphere including nitrogen, for example, a treatment in a nitrogen plasma or an ozone UV treatment, the preparation method including: placing into contact the first surface with an aqueous solution including at least 90% water, for a contacting duration longer than or equal to 30 minutes; and then drying the first surface.
    Type: Application
    Filed: December 22, 2022
    Publication date: June 29, 2023
    Applicant: Commissariat à l'Énergie Atomique et aux Énergies Alternatives
    Inventors: Frank Fournel, Christophe Morales, Loïc Sanchez, Brigitte Montmayeul
  • Patent number: 11081463
    Abstract: A method for directly bonding a first and a second substrate. The method comprises removing surface oxide layers from bonding faces of the first and of the second substrate, and hydrogen passivation of the bonding faces, then, in a vacuum, electron impact hydrogen desorption on the bonding faces followed by placement of the bonding faces in intimate contact with one another.
    Type: Grant
    Filed: November 1, 2019
    Date of Patent: August 3, 2021
    Assignee: COMMISSARIAT À L'ÉNERGIE ATOMIQUE ET AUX ÉNERGIES ALTERNATIVES
    Inventors: Frank Fournel, Vincent Larrey, Sylvain Maitrejean, Christophe Morales
  • Patent number: 10957539
    Abstract: A process includes the successive steps of: a) providing first and second substrates, each including a first surface and an opposite, second surface, lateral edges connecting the first and second surfaces, b) bonding the first substrate to the second substrate by direct bonding with the first surfaces of the first and second substrates so as to form a bonding interface (IC), and making the lateral edges of the first and second substrates hydrophobic on either side of the bonding interface (IC).
    Type: Grant
    Filed: December 3, 2018
    Date of Patent: March 23, 2021
    Assignee: Commissariat a l'energie atomique et aux energies alternatives
    Inventors: Frank Fournel, Vincent Larrey, Christophe Morales, Marwan Tedjini
  • Patent number: 10818500
    Abstract: The invention aims for a wafer edge trimming method 1 adhered on a support wafer 2 by way of an interface layer 3. A zone at the perimeter 12 of the wafer 1 is trimmed by grinding. The stopping of the grinding is advantageously done at the level of the interface layer 3. To do this, an interface layer 3 comprising a transition layer 4 having a resistance to grinding greater than that of the wafer 1 is used. According to a possibility, detecting an increase of the resistance to grinding during the grinding is done, so as to stop the grinding.
    Type: Grant
    Filed: December 21, 2018
    Date of Patent: October 27, 2020
    Assignee: Commissariat A L'Energie Atomique et aux Energies Alternatives
    Inventors: Franck Fournel, Christophe Morales, Marc Zussy
  • Patent number: 10755967
    Abstract: A method is provided, including successive steps of a) providing a donor substrate covered with a layer of oxide; b) implanting gaseous species in the donor substrate, through the layer to form an embrittlement zone, and at the end of step b), the layer has an absorbance peak with a maximum at a first wavenumber, and with a full width at half maximum; c) applying ultraviolet radiation to the free surface of the layer under an ozone atmosphere and according to a thermal budget for: shifting the maximum by at least 3 cm?1 towards increasing wavenumbers, reducing the full width at half maximum by at least 3 cm?1, and allowing direct adhesion with the free surface; d) assembling the donor substrate on the supporting substrate by direct adhesion with the free surface; and e) splitting the donor substrate along the embrittlement zone to expose a useful layer.
    Type: Grant
    Filed: December 19, 2018
    Date of Patent: August 25, 2020
    Assignee: Commissariat a l'energie atomique et aux energies alternatives
    Inventors: Hubert Moriceau, Christophe Morales
  • Patent number: 10727106
    Abstract: This method comprises the successive steps of providing a donor substrate comprising a first surface; smoothing the first surface of the donor substrate until a reconstructed surface topology is obtained; forming a first dielectric film on the smoothed first surface of the donor substrate, in such a way that the first dielectric film has a surface that preserves the reconstructed surface topology; implanting gaseous species in the donor substrate, through the first dielectric film, so as to form an embrittlement zone, the useful layer being delimited by the embrittlement zone and by the first surface of the donor substrate; assembling the donor substrate on the supporting substrate by direct adhesion; and splitting the donor substrate along the embrittlement zone so as to expose the useful layer.
    Type: Grant
    Filed: December 19, 2018
    Date of Patent: July 28, 2020
    Assignee: Commissariat a l'energie atomique et aux energies alternatives
    Inventors: Hubert Moriceau, Christophe Morales
  • Publication number: 20200152597
    Abstract: A method for directly bonding a first and a second substrate. The method comprises removing surface oxide layers from bonding faces of the first and of the second substrate, and hydrogen passivation of the bonding faces, then, in a vacuum, electron impact hydrogen desorption on the bonding faces followed by placement of the bonding faces in intimate contact with one another.
    Type: Application
    Filed: November 1, 2019
    Publication date: May 14, 2020
    Inventors: Frank Fournel, Vincent Larrey, Sylvain Maitrejean, Christophe Morales
  • Patent number: 10651032
    Abstract: The present invention relates to the controlling of the deposition quality of an epitaxial layer, for example of gallium nitride, on a growth plate, for example of silicon, in particular at the level of the edges of the plate. The invention aims, in particular, to reduce the complexity and the production cost of known solutions. The production method according to the invention highlights the existence of a chamfer on each growth plate and provides a self-positioned deposition of a protective film on at least one part of the chamfer using a mechanical mask, preventing the deposition of the protective film on the useful zone Zu through epitaxy.
    Type: Grant
    Filed: July 25, 2017
    Date of Patent: May 12, 2020
    Assignee: COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES
    Inventors: Hubert Moriceau, Matthew Charles, Christophe Morales
  • Patent number: 10497609
    Abstract: A method for direct bonding between at least a first and a second substrate, each of the first and second substrates containing a first and a second main surface, the method including: a first thinning of the edges of the first substrate over at least one portion of the circumference of the first substrate, at the first main surface of the first substrate; and placing the second main surface of the first substrate in contact with the second main surface of the second substrate such that a bonding wave propagates between the first and second substrates, securing the first and second substrates to one another by direct bonding such that portions of the second main surface of the first substrate located below the thinned portions of the first main surface of the first substrate are secured to the second substrate.
    Type: Grant
    Filed: May 10, 2016
    Date of Patent: December 3, 2019
    Assignee: COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES
    Inventors: Frank Fournel, Christophe Morales, Hubert Moriceau, Francois Rieutord
  • Publication number: 20190214259
    Abstract: A process includes the successive steps of: a) providing first and second substrates, each including a first surface and an opposite, second surface, lateral edges connecting the first and second surfaces, b) bonding the first substrate to the second substrate by direct bonding with the first surfaces of the first and second substrates so as to form a bonding interface (IC), and making the lateral edges of the first and second substrates hydrophobic on either side of the bonding interface (IC).
    Type: Application
    Filed: December 3, 2018
    Publication date: July 11, 2019
    Applicant: Commissariat a l'energie atomique et aux energies alternatives
    Inventors: Frank Fournel, Vincent Larrey, Christophe Morales, Marwan Tedjini
  • Publication number: 20190206693
    Abstract: The invention aims for a wafer edge trimming method 1 adhered on a support wafer 2 by way of an interface layer 3. A zone at the perimeter 12 of the wafer 1 is trimmed by grinding. The stopping of the grinding is advantageously done at the level of the interface layer 3. To do this, an interface layer 3 comprising a transition layer 4 having a resistance to grinding greater than that of the wafer 1 is used. According to a possibility, detecting an increase of the resistance to grinding during the grinding is done, so as to stop the grinding.
    Type: Application
    Filed: December 21, 2018
    Publication date: July 4, 2019
    Applicant: Commissariat A L'Energie Atomique et aux Energies Alternatives
    Inventors: Franck Fournel, Christophe Morales, Marc Zussy
  • Publication number: 20190206721
    Abstract: A method is provided, including successive steps of a) providing a donor substrate covered with a layer of oxide; b) implanting gaseous species in the donor substrate, through the layer to form an embrittlement zone, and at the end of step b), the layer has an absorbance peak with a maximum at a first wavenumber, and with a full width at half maximum; c) applying ultraviolet radiation to the free surface of the layer under an ozone atmosphere and according to a thermal budget for: shifting the maximum by at least 3 cm?1 towards increasing wavenumbers, reducing the full width at half maximum by at least 3 cm?1, and allowing direct adhesion with the free surface; d) assembling the donor substrate on the supporting substrate by direct adhesion with the free surface; and e) splitting the donor substrate along the embrittlement zone to expose a useful layer.
    Type: Application
    Filed: December 19, 2018
    Publication date: July 4, 2019
    Applicant: Commissariat a l'energie atomique et aux energies alternatives
    Inventors: Hubert MORICEAU, Christophe MORALES
  • Publication number: 20190206678
    Abstract: The present invention relates to the controlling of the deposition quality of an epitaxial layer, for example of gallium nitride, on a growth plate, for example of silicon, in particular at the level of the edges of the plate. The invention aims, in particular, to reduce the complexity and the production cost of known solutions. The production method according to the invention highlights the existence of a chamfer on each growth plate and provides a self-positioned deposition of a protective film on at least one part of the chamfer using a mechanical mask, preventing the deposition of the protective film on the useful zone Zu through epitaxy.
    Type: Application
    Filed: July 25, 2017
    Publication date: July 4, 2019
    Applicant: COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES
    Inventors: Hubert MORICEAU, Matthew CHARLES, Christophe MORALES
  • Publication number: 20190198385
    Abstract: This method comprises the successive steps of providing a donor substrate comprising a first surface; smoothing the first surface of the donor substrate until a reconstructed surface topology is obtained; forming a first dielectric film on the smoothed first surface of the donor substrate, in such a way that the first dielectric film has a surface that preserves the reconstructed surface topology; implanting gaseous species in the donor substrate, through the first dielectric film, so as to form an embrittlement zone, the useful layer being delimited by the embrittlement zone and by the first surface of the donor substrate; assembling the donor substrate on the supporting substrate by direct adhesion; and splitting the donor substrate along the embrittlement zone so as to expose the useful layer.
    Type: Application
    Filed: December 19, 2018
    Publication date: June 27, 2019
    Applicant: Commissariat a l'energie atomique et aux energies alternatives
    Inventors: Hubert MORICEAU, Christophe MORALES
  • Publication number: 20180158719
    Abstract: A method for direct bonding between at least a first and a second substrate, each of the first and second substrates containing a first and a second main surface, the method including: a first thinning of the edges of the first substrate over at least one portion of the circumference of the first substrate, at the first main surface of the first substrate; and placing the second main surface of the first substrate in contact with the second main surface of the second substrate such that a bonding wave propagates between the first and second substrates, securing the first and second substrates to one another by direct bonding such that portions of the second main surface of the first substrate located below the thinned portions of the first main surface of the first substrate are secured to the second substrate.
    Type: Application
    Filed: May 10, 2016
    Publication date: June 7, 2018
    Applicant: COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES
    Inventors: Frank FOURNEL, Christophe MORALES, Hubert MORICEAU, Francois RIEUTORD
  • Patent number: 9922954
    Abstract: This method includes steps a) providing the first structure and second structure, the first structure including a surface on which a silicon layer is formed; b) bombarding the silicon layer by a beam (F) of species configured to reach the surface of the first structure, and to preserve a part of the silicon layer with a surface roughness of less than 1 nm RMS on completion of the bombardment; c) bonding the first structure and second structure by direct bonding between the part of the silicon layer preserved in step b) and the second structure, steps b) and c) being executed in the same chamber subjected to a vacuum of less than 10?2 mbar.
    Type: Grant
    Filed: December 22, 2016
    Date of Patent: March 20, 2018
    Assignee: COMMISARIAT À L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES
    Inventors: Hubert Moriceau, Frank Fournel, Christophe Morales