Patents by Inventor Christophe Renner

Christophe Renner has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20100166597
    Abstract: The invention relates to a device for treating a gaseous effluent loaded with odorant compounds, comprising a reactor (1) through which said effluent can pass in transit in the presence of a washing solution, characterized in that said reactor (1) integrates a three-dimensional mesh (14) capable of promoting interfacial exchanges between said effluent and said washing solution.
    Type: Application
    Filed: November 30, 2006
    Publication date: July 1, 2010
    Inventors: Celia Sanchez, Annabelle Couvert, Christophe Renner
  • Patent number: 6677629
    Abstract: The invention concerns a component of composite structure (10) consisting of a layer of ferroelectric material (11) and at least a thin film of semiconductor material or of a thin metal or supraconducting film (12) in close contact with the layer of ferroelectric material (11). It further comprises means for generating local modifications of the ferroelectric material polarization. This mechanism includes a device for applying a voltage between at least one punctiform electrode (13) arranged for selectively scanning the composite structure (10) surface facing that consisting of the semiconductor or thin metal or supraconducting film (12), and the semiconductor or thin metal or supraconducting film.
    Type: Grant
    Filed: September 30, 1999
    Date of Patent: January 13, 2004
    Assignee: Universite de Geneve
    Inventors: Oystein Fischer, Jean-Marc Triscone, Charles H. Ahn, Malcom R. Beasley, Christophe Renner, Thomas Tybell
  • Publication number: 20030104637
    Abstract: A magnetic random access memory (MRAM) cell is provided. The magnetic random access memory cell comprises an insulating substrate, an electrically conductive base line provided on the insulating substrate, at least one magnetic quantum dot attached to the base line, and an electrically conductive top line provided across the at least one magnetic quantum dot in a direction transverse to the base line. A junction is thereby formed between the base line and the top line. At least one of the base line and the top line comprise a magnetic material. A method for manufacturing the magnetic random access memory cell is also provided. In addition, an array of magnetic random access memory cells is provided, as well as a method for manufacturing same.
    Type: Application
    Filed: April 10, 2002
    Publication date: June 5, 2003
    Applicant: NEC Research Institute, Inc.
    Inventors: Gabriel Aeppli, David J. Norris, Christophe Renner, Yeong-Ah Soh
  • Publication number: 20030103367
    Abstract: A magnetic random access memory (MRAM) cell is provided. The magnetic random access memory cell comprises an insulating substrate, an electrically conductive base line provided on the insulating substrate, at least one magnetic quantum dot attached to the base line, and an electrically conductive top line provided across the at least one magnetic quantum dot in a direction transverse to the base line. A junction is thereby formed between the base line and the top line. At least one of the base line and the top line comprise a magnetic material. A method for manufacturing the magnetic random access memory cell is also provided. In addition, an array of magnetic random access memory cells is provided, as well as a method for manufacturing same.
    Type: Application
    Filed: November 30, 2001
    Publication date: June 5, 2003
    Applicant: NEC Research Institute, Inc.
    Inventors: Gabriel Aeppli, David J. Norris, Christophe Renner, Yeong-Ah Soh