Abstract: Provides a resistor with improved switchable resistance and non-volatile memory device. An example resistor includes a first electrode, a second electrode facing the first electrode and a resistance structure between the first electrode and the second electrode. The resistance structure includes an insulating dielectric material in which a confined switchable conductive region is formed between the first and second electrode. The resistor further includes a perturbation element, locally exerting mechanical stress on the resistance structure in the vicinity of the perturbation element at least during a forming process in which the confined switchable conductive region is formed.

Abstract: A magnetic sensing unit for measuring displacements on a nanometer scale is provided. A moveable part and a fixed part of a microdevice magnetic sensing unit comprises a magnetic element having a magnetic field and a magnetic sensor, the magnetic element being located on the moveable part and the magnetic sensor on the fixed part, or alternatively, the magnetic sensor being located on the moveable part and the magnetic element on the fixed part. The magnetic sensor and/or the magnetic element comprise an integral part of the microdevice. The magnetic element and the magnetic sensor are arranged relative to each other such that when the moveable part is displaced the change of the magnetic field at the magnetic sensor is detectable by use of the magnetic sensor.