Patents by Inventor Christophe Vincent Avis

Christophe Vincent Avis has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • P-type amorphous oxide semiconductor including gallium, method of manufacturing same, and solar cell including same and method of manufacturing said solar cell
    Patent number: 10797192
    Abstract: a p-type amorphous oxide semiconductor including gallium, a method of manufacturing the same, a solar cell including the same and a method of manufacturing the solar cell are disclosed. The p-type oxide semiconductor where gallium (Ga) is further combined with combination of one or more components selected from a group of CuS, SnO, ITO, IZTO, IGZO and IZO is provided.
    Type: Grant
    Filed: March 17, 2015
    Date of Patent: October 6, 2020
    Assignee: UNIVERSITY-INDUSTRY COOPERATION GROUP OF KYUNG HEE UNIVERSITY
    Inventors: Jin Jang, Christophe Vincent Avis, Hyeong Pil Kim
  • ORGANIC LIGHT EMITTING DIODE USING P-TYPE OXIDE SEMICONDUCTOR CONTAINING GALLIUM, AND PREPARATION METHOD THEREFOR
    Publication number: 20170263879
    Abstract: The present invention relates to an organic light emitting diode using a p-type oxide semiconductor containing gallium, and a preparation method therefor. According to the present invention, provided is an organic light emitting diode comprising an anode, a hole injection layer, a hole transport layer, a light emitting layer, an electron transport layer and a cathode, wherein the hole injection layer is a p-type oxide semiconductor containing Ga.
    Type: Application
    Filed: September 11, 2015
    Publication date: September 14, 2017
    Inventors: Jin JANG, Jeong Gi KIM, Christophe Vincent AVIS
  • P-TYPE AMORPHOUS OXIDE SEMICONDUCTOR INCLUDING GALLIUM, METHOD OF MANUFACTURING SAME, AND SOLAR CELL INCLUDING SAME AND METHOD OF MANUFACTURING SAID SOLAR CELL
    Publication number: 20170155009
    Abstract: a p-type amorphous oxide semiconductor including gallium, a method of manufacturing the same, a solar cell including the same and a method of manufacturing the solar cell are disclosed. The p-type oxide semiconductor where gallium (Ga) is further combined with combination of one or more components selected from a group of CuS, SnO, ITO, IZTO, IGZO and IZO is provided.
    Type: Application
    Filed: March 17, 2015
    Publication date: June 1, 2017
    Inventors: Jin JANG, Christophe Vincent AVIS, Hyeong Pil KIM
  • Thin film transistor and method of manufacturing the same and display device including the same
    Patent number: 9171913
    Abstract: Disclosed is a thin film transistor that includes a gate electrode, a semiconductor overlapping with the gate electrode, a source electrode that is electrically connected to the semiconductor, a drain electrode that is electrically connected to the semiconductor and faces the source electrode, and a stacked gate insulating layer that is positioned between the gate electrode and semiconductor. The stacked gate insulating layer includes an aluminum oxide layer. A method of manufacturing the same and a display device including the thin film transistor are also disclosed.
    Type: Grant
    Filed: November 30, 2012
    Date of Patent: October 27, 2015
    Assignees: Samsung Display Co., Ltd., INDUSTRY ACADEMY COOPERATION FOUNDATION OF KYUNGHEE UNIVERSITY
    Inventors: Tae-Woong Kim, Jin Jang, Christophe Vincent Avis, Youn-Goo Kim
  • THIN FILM TRANSISTOR AND METHOD OF MANUFACTURING THE SAME AND DISPLAY DEVICE INCLUDING THE SAME
    Publication number: 20140048795
    Abstract: Disclosed is a thin film transistor that includes a gate electrode, a semiconductor overlapping with the gate electrode, a source electrode that is electrically connected to the semiconductor, a drain electrode that is electrically connected to the semiconductor and faces the source electrode, and a stacked gate insulating layer that is positioned between the gate electrode and semiconductor. The stacked gate insulating layer includes an aluminum oxide layer. A method of manufacturing the same and a display device including the thin film transistor are also disclosed.
    Type: Application
    Filed: November 30, 2012
    Publication date: February 20, 2014
    Applicants: Industry Academy Cooperation Foundation of KyungHee University, Samsung Display Co., Ltd.
    Inventors: Tae-Woong Kim, Jin Jang, Christophe Vincent Avis, Youn-Goo Kim