Abstract: The invention relates to an electric field device (10) with an ignition protection-type pressure-tight encapsulation for use in explosion-prone regions for controlling and/or regulating a valve unit of a process system, comprising a housing (12), in which a control unit (48) that comprises electronic components and is used as a monitoring, control, and/or regulating unit is arranged, said control unit (48) having a releasable communication connection to an operating unit (62). The housing (12) can be connected to a drive housing of the valve unit via a mechanical interface (42), and the housing has at least one connection feedthrough (44), via which at least one line can be connected that is connected to the control unit (48) via a connection interface (46).

Abstract: The invention relates to an electric field device (10) with an ignition protection-type pressure-tight encapsulation for use in explosion-prone regions for controlling and/or regulating a valve unit of a process system, comprising a housing (12), in which a control unit (48) that comprises electronic components and is used as a monitoring, control, and/or regulating unit is arranged, said control unit (48) having a releasable communication connection to an operating unit (62). The housing (12) can be connected to a drive housing of the valve unit via a mechanical interface (42), and the housing has at least one connection feedthrough (44), via which at least one line can be connected that is connected to the control unit (48) via a connection interface (46).

Abstract: A method, apparatus and a system, for performing a process control using analysis of an upstream process is provided. The method comprises performing a first process on a workpiece and performing a qualitative analysis upon the workpiece relating to the first process, the qualitative analysis comprises analyzing at least one metrology measurement relating to the first process and a workpiece feature to evaluate a characteristic of the workpiece. The method further comprises selecting a process control parameter for performing a second process upon the workpiece based upon the qualitative analysis.

Abstract: A method and apparatus is provided for associating operational data with workpieces and correlating the operational data with yield data. The method comprises processing a workpiece using a processing tool, associating the operational data with the workpiece during the processing of the workpiece and measuring the yield data associated with the processed workpiece. The method further comprises correlating the operational data with the yield data to make one or more determinations.

Abstract: A method includes providing a set of initial characteristic values associated with the semiconductor device. A first fabrication process is performed on the semiconductor device. Fabrication data associated with the first fabrication process is collected. At least one of the initial characteristic values is replaced with the fabrication data collected for the first fabrication process to generate a first modified set of characteristic values. A first value for at least one electrical characteristic of the semiconductor device is predicted based on the modified set of characteristic values. A system includes a first process tool, a first data collection unit, and a prediction unit. The first process tool is configured to perform a first fabrication process on the semiconductor device. The first data collection unit is configured to collect fabrication data associated with the first fabrication process.

Abstract: A method and an apparatus for processing semiconductor wafer based upon end-of-line (EOL) parameters. A target end-of-line parameter relating to a semiconductor wafer is determined. An inline parameter relating to processing of the semiconductor wafer is controlled in response to the target end-of-line parameter using a controller. Controlling the inline parameter includes adjusting a target inline parameter that correlates to the inline parameter.

Abstract: The present invention provides a method and apparatus for dynamic adjustment of a sensor sampling rate. The method includes providing a data collection plan indicative of at least one first sampling rate for at least one sensor associated with at least one processing tool, receiving tool trace data from the at least one sensor via a network, and modifying, based on the tool trace data and a bandwidth associated with the network, the data collection plan to indicate at least one second sampling rate different from a corresponding at least one first sampling rate.

Abstract: The present invention provides a method and apparatus for integrating multiple sample plans. The method includes receiving a first wafer state data set from an in situ wafer measurement device, the first wafer state data set being indicative of at least one characteristic of at least one wafer processed by a processing tool and receiving a second wafer state data set from an ex situ wafer measurement device, the second wafer state data set being indicative of the at least one characteristic of the at least one wafer processed by the processing tool. The method also includes forming a third wafer state data set using the first and second wafer state data sets and determining the at least one characteristic of the at least one wafer based upon the third wafer state data set.

Abstract: The present invention provides a method and apparatus for dynamic adjustment of sensor and/or metrology sensitivities. The method includes accessing measurement information provided by a first measurement device and modifying a sensitivity of a second measurement device based on the measurement information provided by the first measurement device.

Abstract: The present invention provides a method and apparatus for dynamic adjustment of a sampling plan. The method includes accessing wafer electrical test data associated with at least one workpiece that has been processed by at least one processing tool. The method also includes determining, based on the wafer electrical test data, at least one sampling plan for at least one measurement device configured to measure at least one parameter associated with workpieces processed by the at least one processing tool.

Abstract: A method and an apparatus are provided for applying a self-adaptive filter to a drifting process. The method includes processing a workpiece, measuring an output characteristic of the processed workpiece and modifying a previous estimated process state based at least on the measured output characteristic. The method further includes estimating a next process state based at least on the modified previous estimated process state.

Abstract: The present invention provides a method and apparatus for detecting step and impulse disturbances. The method includes determining a pattern based on a plurality of probabilities associated with a corresponding plurality of wafer processing parameters and determining a type of a disturbance based upon the pattern.

Abstract: The present invention provides for a method and an apparatus for performing field-to-field compensation during semiconductor manufacturing. At least one semiconductor device is processed. Metrology data is collected from the processed semiconductor device. A field-to-field metrology analysis is performed based upon the metrology data. Residual-error analysis is performed based upon the field-to-field analysis.

Abstract: A method for initializing process controllers based on tool event data includes providing a tool having a process controller adapted to employ a control model to control an operating recipe of the tool; receiving a tool event notification; and initializing the control model in response to receiving the tool event notification. A manufacturing system includes a tool and a process controller. The tool is adapted to process wafers in accordance with an operating recipe. The process controller is adapted to employ a control model to control the operating recipe in accordance with a control algorithm. The process controller is further adapted to receive a tool event notification and initialize the control model in response to receiving the tool event notification.

Abstract: A method and apparatus provided for controlling cumulative wafer effects. The method comprises processing a workpiece, determining a cumulative effect of the processing on the workpiece and comparing the determined cumulative effect to a reference target value. The method further comprises adjusting a downstream process of the workpiece based on comparing the determined cumulative effect to the reference target value.

Abstract: A method includes defining a design window for a manufacturing process performed by a tool and a process window within the design window. A workpiece likely to have a characteristic outside the process window is identified. The characteristic of the identified workpiece is measured. A control model for controlling the tool is updated using the measured characteristic. A system includes a tool, a process controller, a metrology tool, and a sampling controller. The tool is adapted to process workpieces in accordance with a manufacturing process. The manufacturing process has an associated design window and a process window defined within the design window. The process controller is adapted to control the tool using a control model. The sampling controller is adapted to identify a workpiece likely to have a characteristic outside the process window and direct the metrology tool to measure the characteristic of the identified workpiece.

Abstract: The present invention is directed to methods and systems for calibrating integrated metrology systems and stand-alone metrology systems that acquire wafer state data. In one illustrative embodiment, the method includes providing a plurality of process tools, each of the process tools comprising an integrated metrology system adapted to obtain wafer state data, and providing a plurality of stand-alone metrology tools, each of which are adapted to obtain wafer state data. The method further comprises processing at least one wafer through each of the process tools and each of the stand-alone metrology tools, wherein wafer state data for at least one wafer is acquired in each of the process tools and in each of the stand-alone metrology tools, and calibrating the integrated metrology system in at least one of the process tools or at least one of the stand-alone metrology tools based upon the wafer state data acquired for the wafer.

Abstract: A method and an apparatus for matching data related to an integrated metrology tool and a standalone metrology tool. At least one semiconductor wafer is processed. An integrated metrology tool and/or a standalone metrology tool is matched based upon a difference between metrology data relating to a processed semiconductor wafer acquired by the integrated metrology tool and metrology data acquired by the standalone metrology tool, using a controller.

Abstract: A method for controlling a manufacturing process includes processing a plurality of workpieces in a tool; monitoring a rework rate associated with the workpieces processed in the tool; and initiating an automatic corrective action in response to the rework rate being greater than a predetermined threshold. A manufacturing system includes a tool adapted to process a plurality of workpieces and a rework controller adapted to monitor a rework rate associated with the workpieces processed in the tool and initiate an automatic corrective action in response to the rework rate being greater than a predetermined threshold.

Abstract: A method and an apparatus for implementing enhancing data population based upon manufacturing data. A first and a second workpiece are processed. Metrology data relating to the first workpiece is acquired. The metrology data is extrapolated to generate representative metrology data relating to the second workpiece.