Abstract: Methods of forming a layer of silicon germanium include forming an epitaxial layer of Si1-xGex on a silicon substrate, wherein the epitaxial layer of Si1-xGex has a thickness that is less than a critical thickness, hc, at which threading dislocations form in Si1-xGex on silicon; etching the epitaxial layer of Si1-xGex to form Si1-xGex pillars that define a trench in the epitaxial layer of Si1-xGex, wherein the trench has a height and a width, wherein the trench has an aspect ratio of height to width of at least 1.5; and epitaxially growing a suspended layer of Si1-xGex from upper portions of the Si1-xGex pillars, wherein the suspended layer defines an air gap in the trench beneath the suspended layer of Si1-xGex.

Abstract: A stack for a semiconductor device and a method for making the stack are disclosed. The stack includes a plurality of sacrificial layers in which each sacrificial layer has a first lattice parameter; and at least one channel layer that has a second lattice parameter in which the first lattice parameter is less than or equal to the second lattice parameter, and each channel layer is disposed between and in contact with two sacrificial layers and includes a compressive strain or a neutral strain based on a difference between the first lattice parameter and the second lattice parameter.

Abstract: A semiconductor device includes a first diode connected transistor of a first conductivity type and a second diode connected transistor of a second conductivity type connected in series, each of the first and second diode connected transistors being configured to exhibit negative differential resistance in response to an applied voltage. The first drain and first source regions of the first diode connected transistor include dopants of the first conductivity type at degenerate dopant concentration levels and a gate of the first diode connected transistor has a work function that corresponds to that of the semiconductor containing dopants of the second conductivity type. The second drain and second source regions of the second diode connected transistor include dopants of the second conductivity type at degenerate dopant concentration levels and a gate of the second diode connected transistor has a work function that corresponds to that of the semiconductor containing dopants of the first conductivity type.

Abstract: Methods of forming a layer of silicon germanium include forming an epitaxial layer of Si1-xGex on a silicon substrate, wherein the epitaxial layer of Si1-xGex has a thickness that is less than a critical thickness, hc, at which threading dislocations form in Si1-xGex on silicon; etching the epitaxial layer of Si1-xGex to form Si1-xGex pillars that define a trench in the epitaxial layer of Si1-xGex, wherein the trench has a height and a width, wherein the trench has an aspect ratio of height to width of at least 1.5; and epitaxially growing a suspended layer of Si1-xGex from upper portions of the Si1-xGex pillars, wherein the suspended layer defines an air gap in the trench beneath the suspended layer of Si1-xGex.

Abstract: A semiconductor device includes a first diode connected transistor of a first conductivity type and a second diode connected transistor of a second conductivity type connected in series, each of the first and second diode connected transistors being configured to exhibit negative differential resistance in response to an applied voltage. The first drain and first source regions of the first diode connected transistor include dopants of the first conductivity type at degenerate dopant concentration levels and a gate of the first diode connected transistor has a work function that corresponds to that of the semiconductor containing dopants of the second conductivity type. The second drain and second source regions of the second diode connected transistor include dopants of the second conductivity type at degenerate dopant concentration levels and a gate of the second diode connected transistor has a work function that corresponds to that of the semiconductor containing dopants of the first conductivity type.

Abstract: A semiconductor device can include a channel region with a first semiconductor material for a majority carrier in the channel region during operation (on state) of the device and a metal contact. A source/drain region can include a semiconductor material alloy including a second semiconductor material and at least one heterojunction located between the metal contact and the channel region, wherein the heterojunction forms a band-edge offset for the majority carrier that is less than or equal to about 0.2 eV.

Abstract: A method and apparatus for scheduling are disclosed. The apparatus applies tests to microscope slides, where the slides are loaded in trays. Each tray is treated as a batch, and batches may be interleaved to reduce the total running time of testing all slides in up to three batches. The batches of slides have protocols that define the application of reagents such as primary antibodies. The protocols define open times, where no common resources are used, and use times, where common resources are used. The scheduler operates to ensure that the use times between batches does not overlap, without leaving the next step in the protocol for an excessive period of time.

Abstract: Improved expanded PTFE materials and improved gasket materials made therefrom, the gaskets being capable of forming a seal with greater bolt load retention than is possible with existing PTFE gaskets. The expanded PTFE membranes of the invention can be tailored to exhibit a matrix tensile strength in at least one direction of at least 25,000 psi, a matrix tensile strength ratio in two orthogonal directions of between 0.25 and 4, an orientation index of 50° or less, and a density of 2.0 g/cc or less. The improved gaskets exhibit improved mechanical properties such as high bolt load retention, low creep, high tensile strength, low stress to seal and high crystallinity index.

Abstract: Improved expanded PTFE materials and improved gasket materials made therefrom, the gaskets being capable of forming a seal with greater bolt load retention than is possible with existing PTFE gaskets. The expanded PTFE membranes of the invention can be tailored to exhibit a matrix tensile strength in at least one direction of at least 25,000 psi, a matrix tensile strength ratio in two orthogonal directions of between 0.25 and 4, an orientation index of 50° or less, and a density of 2.0 g/cc or less. The improved gaskets exhibit improved mechanical properties such as high bolt load retention, low creep, high tensile strength, low stress to seal and high crystallinity index.

Abstract: Improved expanded PTFE materials and improved gasket materials made therefrom, the gaskets being capable of forming a seal with greater bolt load retention than is possible with existing PTFE gaskets. The expanded PTFE membranes of the invention can be tailored to exhibit a matrix tensile strength in at least one direction of at least 25,000 psi, a matrix tensile strength ratio in two orthogonal directions of between .025 and 4, an orientation index of 50° or less, and a density of 2.0 g/cc or less. The improved gaskets exhibit improved mechanical properties such as high bolt load retention, low creep, high tensile strength, low stress to seal and high crystallinity index.

Abstract: Improved expanded PTFE materials and improved gasket materials made therefrom, the gaskets being capable of forming a seal with greater bolt load retention than is possible with existing PTFE gaskets. The expanded PTFE membranes of the invention can be tailored to exhibit a matrix tensile strength in at least one direction of at least 25,000 psi, a matrix tensile strength ratio in two orthogonal directions of between 0.25 and 4, an orientation index of 50° or less, and a density of 2.0 g/cc or less. The improved gaskets exhibit improved mechanical properties such as high bolt load retention, low creep, high tensile strength, low stress to seal and high crystallinity index.

Abstract: Improved expanded PTFE materials and improved gasket materials made therefrom, the gaskets being capable of forming a seal with greater bolt load retention than is possible with existing PTFE gaskets. The expanded PTFE membranes of the invention can be tailored to exhibit a matrix tensile strength in at least one direction of at least 25,000 psi, a matrix tensile strength ratio in two orthogonal directions of between 0.25 and 4, an orientation index of 50° or less, and a density of 2.0 g/cc or less. The improved gaskets exhibit improved mechanical properties such as high bolt load retention, low creep, high tensile strength, low stress to seal and high crystallinity index.

Abstract: Improved expanded PTFE materials and improved gasket materials made therefrom, the gaskets being capable of forming a seal with greater bolt load retention than is possible with existing PTFE gaskets. The expanded PTFE membranes of the invention can be tailored to exhibit a matrix tensile strength in at least one direction of at least 25,000 psi, a matrix tensile strength ratio in two orthogonal directions of between 0.025 and 4, an orientation index of 50° or less, and a density of 2.0 g/cc or less. The improved gaskets exhibit improved mechanical properties such as high bolt load retention, low creep, high tensile strength, low stress to seal and high crystallinity index.

Abstract: A manual transmission includes an input shaft operatively connected to a source of motive power and a countershaft in axially parallel relationship with the input shaft. The manual transmission also includes an output shaft in axially parallel relationship with the counter shaft. The manual transmission further includes a plurality of gear set pairs disposed between the input shaft and the counter shaft such that the gear sets provide different gear ratios for transferring torque from the input shaft to the output shaft, each of the gear sets including a driver gear operatively supported by the input shaft such that the driver gear receives only torque from the source of motive power.

Abstract: In a method and system for securitizing contracts valued on an index, a special purpose entity (SPE) is provided and holds as substantially all of its assets a derivative contract with a contract dealer. The contract has an initial notional value and is tied to an index related to items traded by a multilateral transactional execution facility, such as futures contracts traded on an exchange. The held contract is also scalable so that the notional value can be increased on demand in exchange for a corresponding payment to the contract dealer and decreased on demand in exchange for a corresponding payment from the contract dealer. The SPE issues exchange tradable securities that derive value based on the value of the contract held by the SPE. To issue additional shares, assets are contributed to the contract dealer who increases the notional value of the contract held by the SPE. The increase in value of the contract supports the issuance of additional shares.

Abstract: Improved expanded PTFE materials and improved gasket materials made therefrom, the gaskets being capable of forming a seal with greater bolt load retention than is possible with existing PTFE gaskets. The expanded PTFE membranes of the invention can be tailored to exhibit a matrix tensile strength in at least one direction of at least 25,000 psi, a matrix tensile strength ratio in two orthogonal directions of between 0.025 and 4, an orientation index of 50° or less, and a density of 2.0 g/cc or less. The improved gaskets exhibit improved mechanical properties such as high bolt load retention, low creep, high tensile strength, low stress to seal and high crystallinity index.

Abstract: Improved expanded PTFE materials and improved gasket materials made therefrom, the gaskets being capable of forming a seal with greater bolt load retention than is possible with existing PTFE gaskets. The expanded PTFE membranes of the invention can be tailored to exhibit a matrix tensile strength in at least one direction of at least 25,000 psi, a matrix tensile strength ratio in two orthogonal directions of between 0.025 and 4, an orientation index of 500 or less, and a density of 2.0 g/cc or less. The improved gaskets exhibit improved mechanical properties such as high bolt load retention, low creep, high tensile strength, low stress to seal and high crystallinity index.

Abstract: Improved expanded PTFE materials and improved gasket materials made therefrom, the gaskets being capable of forming a seal with greater bolt load retention than is possible with existing PTFE gaskets. The expanded PTFE membranes of the invention can be tailored to exhibit a matrix tensile strength in at least one direction of at least 25,000 psi, a matrix tensile strength ratio in two orthogonal directions of between 0.025 and 4, an orientation index of 50° or less, and a density of 2.0 g/cc or less. The improved gaskets exhibit improved mechanical properties such as high bolt load retention, low creep, high tensile strength, low stress to seal and high crystallinity index.

Abstract: Improved expanded PTFE materials and improved gasket materials made therefrom, the gaskets being capable of forming a seal with greater bolt load retention than is possible with existing PTFE gaskets. The expanded PTFE membranes of the invention can be tailored to exhibit a matrix tensile strength in at least one direction of at least 25,000 psi, a matrix tensile strength ratio in two orthogonal directions of between 0.025 and 4, an orientation index of 500 or less, and a density of 2.0 g/cc or less. The improved gaskets exhibit improved mechanical properties such as high bolt load retention, low creep, high tensile strength, low stress to seal and high crystallinity index.

Abstract: A method and apparatus for scheduling are disclosed. The apparatus applies tests to microscope slides, where the slides are loaded in trays. Each tray is treated as a batch, and batches may be interleaved to reduce the total running time of testing all slides in up to three batches. The batches of slides have protocols that define the application of reagents such as primary antibodies. The protocols define open times, where no common resources are used, and use times, where common resources are used. The scheduler operates to ensure that the use times between batches does not overlap, without leaving the next step in the protocol for an excessive period of time.