Patents by Inventor Christopher A. Larsen
Christopher A. Larsen has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
-
Publication number: 20230209824Abstract: Memory circuitry comprising strings of memory cells comprises laterally-spaced memory blocks individually comprising a vertical stack comprising alternating insulative tiers and conductive tiers. Channel-material strings of memory cells extend through the insulative tiers and the conductive tiers in a memory-array region. The insulative tiers and the conductive tiers of the laterally-spaced memory blocks extend from the memory-array region into a stair-step region. Individual stairs in the stair-step region comprise one of the conductive tiers. Conductive vias are individually directly against conducting material that is in the one conductive tier in one of the individual stairs. Insulator material in the stair-step region is directly above the stairs. An insulative-material lining is circumferentially around and extends elevationally along individual of the conductive vias between the individual conductive vias and the insulator material.Type: ApplicationFiled: January 14, 2022Publication date: June 29, 2023Applicant: Micron Technology, Inc.Inventors: Shuangqiang Luo, Christopher Larsen, Rui Zhang
-
Patent number: 11622629Abstract: A furniture member includes a base assembly, a frame assembly, a legrest mechanism, a support rod, and a sync mechanism. The frame assembly is movable relative to the base assembly among an upright position, a partially reclined position, and a fully reclined position. The legrest mechanism is movable relative to the frame assembly between a retracted position and a fully extended position. The support rod is supported by the frame assembly. The sync mechanism is coupled to and supported by the support rod. The sync mechanism is configured to prevent the frame assembly from moving from the upright position to the partially reclined position until the legrest mechanism reaches the fully extended position.Type: GrantFiled: December 13, 2021Date of Patent: April 11, 2023Assignee: La-Z-Boy IncorporatedInventors: Larry P. LaPointe, Jaime A. McPherson, Christopher A. Larsen, Randy Loper, Richard D. Hartford, Chandrasekar Ramasubramanian
-
Patent number: 11600494Abstract: A method used in forming an array of elevationally-extending strings of memory cells comprises forming a stack comprising vertically-alternating insulative tiers and wordline tiers. The stack comprises an etch-stop tier between a first tier and a second tier of the stack. The etch-stop tier is of different composition from those of the insulative tiers and the wordline tiers. Etching is conducted into the insulative tiers and the wordline tiers that are above the etch-stop tier to the etch-stop tier to form channel openings that have individual bases comprising the etch-stop tier. The etch-stop tier is penetrated through to extend individual of the channel openings there-through. After extending the individual channel openings through the etch-stop tier, etching is conducted into and through the insulative tiers and the wordline tiers that are below the etch-stop tier to extend the individual channel openings deeper into the stack below the etch-stop tier.Type: GrantFiled: May 12, 2021Date of Patent: March 7, 2023Assignee: Micron Technology, Inc.Inventors: John D. Hopkins, Gordon A. Haller, Tom J. John, Anish A. Khandekar, Christopher Larsen, Kunal Shrotri
-
Publication number: 20220367512Abstract: Some embodiments include an integrated assembly having a first deck. The first deck has first memory cell levels alternating with first insulative levels. A second deck is over the first deck. The second deck has second memory cell levels alternating with second insulative levels. A cell-material-pillar passes through the first and second decks. Memory cells are along the first and second memory cell levels and include regions of the cell-material-pillar. An intermediate level is between the first and second decks. The intermediate level includes a buffer region adjacent the cell-material-pillar. The buffer region includes a composition different from the first and second insulative materials, and different from the first and second conductive regions. Some embodiments include methods of forming integrated assemblies.Type: ApplicationFiled: July 20, 2022Publication date: November 17, 2022Applicant: Micron Technology, Inc.Inventors: S.M. Istiaque Hossain, Prakash Rau Mokhna Rau, Arun Kumar Dhayalan, Damir Fazil, Joel D. Peterson, Anilkumar Chandolu, Albert Fayrushin, George Matamis, Christopher Larsen, Rokibul Islam
-
Patent number: 11430809Abstract: Some embodiments include an integrated assembly having a first deck. The first deck has first memory cell levels alternating with first insulative levels. A second deck is over the first deck. The second deck has second memory cell levels alternating with second insulative levels. A cell-material-pillar passes through the first and second decks. Memory cells are along the first and second memory cell levels and include regions of the cell-material-pillar. An intermediate level is between the first and second decks. The intermediate level includes a buffer region adjacent the cell-material-pillar. The buffer region includes a composition different from the first and second insulative materials, and different from the first and second conductive regions. Some embodiments include methods of forming integrated assemblies.Type: GrantFiled: August 4, 2020Date of Patent: August 30, 2022Assignee: Micron Technology, Inc.Inventors: S. M. Istiaque Hossain, Prakash Rau Mokhna Rau, Arun Kumar Dhayalan, Damir Fazil, Joel D. Peterson, Anilkumar Chandolu, Albert Fayrushin, George Matamis, Christopher Larsen, Rokibul Islam
-
Publication number: 20220125201Abstract: A furniture member includes a base assembly, a frame assembly, a legrest mechanism, a support rod, and a sync mechanism. The frame assembly is movable relative to the base assembly among an upright position, a partially reclined position, and a fully reclined position. The legrest mechanism is movable relative to the frame assembly between a retracted position and a fully extended position. The support rod is supported by the frame assembly. The sync mechanism is coupled to and supported by the support rod. The sync mechanism is configured to prevent the frame assembly from moving from the upright position to the partially reclined position until the legrest mechanism reaches the fully extended position.Type: ApplicationFiled: December 13, 2021Publication date: April 28, 2022Applicant: La-Z-Boy IncorporatedInventors: Larry P. LAPOINTE, Jaime A. MCPHERSON, Christopher A. LARSEN, Randy LOPER, Richard D. HARTFORD, Chandrasekar RAMASUBRAMANIAN
-
Publication number: 20220045086Abstract: Some embodiments include an integrated assembly having a first deck. The first deck has first memory cell levels alternating with first insulative levels. A second deck is over the first deck. The second deck has second memory cell levels alternating with second insulative levels. A cell-material-pillar passes through the first and second decks. Memory cells are along the first and second memory cell levels and include regions of the cell-material-pillar. An intermediate level is between the first and second decks. The intermediate level includes a buffer region adjacent the cell-material-pillar. The buffer region includes a composition different from the first and second insulative materials, and different from the first and second conductive regions. Some embodiments include methods of forming integrated assemblies.Type: ApplicationFiled: August 4, 2020Publication date: February 10, 2022Applicant: Micron Technology, Inc.Inventors: S.M. Istiaque Hossain, Prakash Rau Mokhna Rau, Arun Kumar Dhayalan, Damir Fazil, Joel D. Peterson, Anilkumar Chandolu, Albert Fayrushin, George Matamis, Christopher Larsen, Rokibul Islam
-
Patent number: 11197549Abstract: A furniture member includes a base assembly, a frame assembly, a legrest mechanism, a support rod, and a sync mechanism. The frame assembly is movable relative to the base assembly among an upright position, a partially reclined position, and a fully reclined position. The legrest mechanism is movable relative to the frame assembly between a retracted position and a fully extended position. The support rod is supported by the frame assembly. The sync mechanism is coupled to and supported by the support rod. The sync mechanism is configured to prevent the frame assembly from moving from the upright position to the partially reclined position until the legrest mechanism reaches the fully extended position.Type: GrantFiled: September 28, 2020Date of Patent: December 14, 2021Assignee: La-Z-Boy IncorporatedInventors: Larry P. LaPointe, Jaime A. McPherson, Christopher A. Larsen, Randy C. Loper, Richard D. Hartford, Chandrasekar Ramasubramanian
-
Publication number: 20210265171Abstract: A method used in forming an array of elevationally-extending strings of memory cells comprises forming a stack comprising vertically-alternating insulative tiers and wordline tiers. The stack comprises an etch-stop tier between a first tier and a second tier of the stack. The etch-stop tier is of different composition from those of the insulative tiers and the wordline tiers. Etching is conducted into the insulative tiers and the wordline tiers that are above the etch-stop tier to the etch-stop tier to form channel openings that have individual bases comprising the etch-stop tier. The etch-stop tier is penetrated through to extend individual of the channel openings there-through. After extending the individual channel openings through the etch-stop tier, etching is conducted into and through the insulative tiers and the wordline tiers that are below the etch-stop tier to extend the individual channel openings deeper into the stack below the etch-stop tier.Type: ApplicationFiled: May 12, 2021Publication date: August 26, 2021Applicant: Micron Technology, Inc.Inventors: John D. Hopkins, Gordon A. Haller, Tom J. John, Anish A. Khandekar, Christopher Larsen, Kunal Shrotri
-
Patent number: 11101280Abstract: A method used in forming a memory array comprising strings of memory cells comprises forming a stack comprising vertically-alternating first tiers and second tiers comprising memory-block regions having channel-material strings therein. Conductor-material contacts are directly against the channel material of individual of the channel-material strings. First insulator material is formed directly above the conductor-material contacts. The first insulator material comprises at least one of (a) and (b), where (a): silicon, nitrogen, and one or more of carbon, oxygen, boron, and phosphorus, and (b): silicon carbide. Second insulator material is formed directly above the first insulator material and the conductor-material contacts. The second insulator material is devoid of each of the (a) and (b). Third insulator material is formed directly above the second insulator material, the first insulator material, and the conductor-material contacts. The third insulator material comprises at least one of the (a) and (b).Type: GrantFiled: December 27, 2019Date of Patent: August 24, 2021Assignee: Micron Technology, Inc.Inventors: Anilkumar Chandolu, S.M. Istiaque Hossain, Darwin A. Clampitt, Arun Kumar Dhayalan, Kevin R. Gast, Christopher Larsen, Prakash Rau Mokhna Rau, Shashank Saraf
-
Publication number: 20210202515Abstract: A method used in forming a memory array comprising strings of memory cells comprises forming a stack comprising vertically-alternating first tiers and second tiers comprising memory-block regions having channel-material strings therein. Conductor-material contacts are directly against the channel material of individual of the channel-material strings. First insulator material is formed directly above the conductor-material contacts. The first insulator material comprises at least one of (a) and (b), where (a): silicon, nitrogen, and one or more of carbon, oxygen, boron, and phosphorus, and (b): silicon carbide. Second insulator material is formed directly above the first insulator material and the conductor-material contacts. The second insulator material is devoid of each of the (a) and (b). Third insulator material is formed directly above the second insulator material, the first insulator material, and the conductor-material contacts. The third insulator material comprises at least one of the (a) and (b).Type: ApplicationFiled: December 27, 2019Publication date: July 1, 2021Applicant: Micron Technology, Inc.Inventors: Anilkumar Chandolu, S.M. Istiaque Hossain, Darwin A. Clampitt, Arun Kumar Dhayalan, Kevin R. Gast, Christopher Larsen, Prakash Rau Mokhna Rau, Shashank Saraf
-
Patent number: 11037797Abstract: A method used in forming an array of elevationally-extending strings of memory cells comprises forming a stack comprising vertically-alternating insulative tiers and wordline tiers. The stack comprises an etch-stop tier between a first tier and a second tier of the stack. The etch-stop tier is of different composition from those of the insulative tiers and the wordline tiers. Etching is conducted into the insulative tiers and the wordline tiers that are above the etch-stop tier to the etch-stop tier to form channel openings that have individual bases comprising the etch-stop tier. The etch-stop tier is penetrated through to extend individual of the channel openings there-through. After extending the individual channel openings through the etch-stop tier, etching is conducted into and through the insulative tiers and the wordline tiers that are below the etch-stop tier to extend the individual channel openings deeper into the stack below the etch-stop tier.Type: GrantFiled: April 21, 2020Date of Patent: June 15, 2021Assignee: Micron Technology, Inc.Inventors: John D. Hopkins, Gordon A. Haller, Tom J. John, Anish A. Khandekar, Christopher Larsen, Kunal Shrotri
-
Patent number: 10925404Abstract: A kit of components is provided for manufacturing a plurality of furniture members. The kit may include first and second armrest frames, a mounting cradle, a remote control device, an adaptor insert, and a control panel. The first armrest frame may include a first armrest panel having a first opening formed therein. The mounting cradle may include a first housing received through the first opening and engaging the first armrest panel. The remote control device may be removably received in the mounting cradle. The second armrest frame may include a second armrest panel having a second opening formed therein. The second opening may be identical to the first opening. The adaptor insert may be partially received through the second opening and may engage the second armrest panel. The adaptor insert may include a third opening. The control panel may include a second housing received through the third opening and engaging the adaptor insert.Type: GrantFiled: April 1, 2019Date of Patent: February 23, 2021Assignee: La-Z-Boy IncorporatedInventors: Jason D. Rains, Christopher A. Larsen, Mark D. McClung, Jason M. Baker
-
Publication number: 20200305609Abstract: A kit of components is provided for manufacturing a plurality of furniture members. The kit may include first and second armrest frames, a mounting cradle, a remote control device, an adaptor insert, and a control panel. The first armrest frame may include a first armrest panel having a first opening formed therein. The mounting cradle may include a first housing received through the first opening and engaging the first armrest panel. The remote control device may be removably received in the mounting cradle. The second armrest frame may include a second armrest panel having a second opening formed therein. The second opening may be identical to the first opening. The adaptor insert may be partially received through the second opening and may engage the second armrest panel. The adaptor insert may include a third opening. The control panel may include a second housing received through the third opening and engaging the adaptor insert.Type: ApplicationFiled: April 1, 2019Publication date: October 1, 2020Applicant: La-Z-Boy IncorporatedInventors: Jason D. RAINS, Christopher A. LARSEN, Mark D. MCCLUNG, Jason M. BAKER
-
Publication number: 20200251347Abstract: A method used in forming an array of elevationally-extending strings of memory cells comprises forming a stack comprising vertically-alternating insulative tiers and wordline tiers. The stack comprises an etch-stop tier between a first tier and a second tier of the stack. The etch-stop tier is of different composition from those of the insulative tiers and the wordline tiers. Etching is conducted into the insulative tiers and the wordline tiers that are above the etch-stop tier to the etch-stop tier to form channel openings that have individual bases comprising the etch-stop tier. The etch-stop tier is penetrated through to extend individual of the channel openings there-through. After extending the individual channel openings through the etch-stop tier, etching is conducted into and through the insulative tiers and the wordline tiers that are below the etch-stop tier to extend the individual channel openings deeper into the stack below the etch-stop tier.Type: ApplicationFiled: April 21, 2020Publication date: August 6, 2020Applicant: Micron Technology, Inc.Inventors: John D. Hopkins, Gordon A. Haller, Tom J. John, Anish A. Khandekar, Christopher Larsen, Kunal Shrotri
-
Patent number: 10702295Abstract: A device for dilating an ostium of a paranasal sinus of a human or animal subject may include: a handle; an elongate shaft having a proximal end coupled with the handle and extending to a distal end; a guidewire disposed through at least a portion of the shaft lumen; a dilator having a non-expanded configuration and an expanded configuration; and a slide member coupled with at least one of the guidewire or the dilator through the longitudinal opening of the shaft for advancing the guidewire and/or the dilator relative to the shaft.Type: GrantFiled: November 16, 2017Date of Patent: July 7, 2020Assignee: Acclarent, Inc.Inventors: Thomas R. Jenkins, Eric Goldfarb, Tom Thanh Vo, Joshua Makower, Robert N. Wood, Ronda M. Heiser, Christopher Larsen, Daniel T. Harfe
-
Patent number: 10684019Abstract: A burner assembly for a cooking hob includes a gas burner portion having a lower housing and a burner housing assembled with and supported by the lower housing. The burner housing defines a gas distribution path open at least on an outer surface of the burner housing through a plurality of outlets. A central region of the gas burner portion is defined by an opening within the burner housing and is at least partially enclosed beneath the gas burner portion by the lower housing. The burner assembly further includes a first electric heating element disposed beneath a portion of the lower housing within the central region of the gas burner portion.Type: GrantFiled: November 17, 2015Date of Patent: June 16, 2020Assignee: Whirlpool CorporationInventor: Christopher A. Larsen
-
Patent number: 10665469Abstract: A method used in forming an array of elevationally-extending strings of memory cells comprises forming a stack comprising vertically-alternating insulative tiers and wordline tiers. The stack comprises an etch-stop tier between a first tier and a second tier of the stack. The etch-stop tier is of different composition from those of the insulative tiers and the wordline tiers. Etching is conducted into the insulative tiers and the wordline tiers that are above the etch-stop tier to the etch-stop tier to form channel openings that have individual bases comprising the etch-stop tier. The etch-stop tier is penetrated through to extend individual of the channel openings there-through. After extending the individual channel openings through the etch-stop tier, etching is conducted into and through the insulative tiers and the wordline tiers that are below the etch-stop tier to extend the individual channel openings deeper into the stack below the etch-stop tier.Type: GrantFiled: September 11, 2018Date of Patent: May 26, 2020Assignee: Micron Technology, Inc.Inventors: John D. Hopkins, Gordon A. Haller, Tom J. John, Anish A. Khandekar, Christopher Larsen, Kunal Shrotri
-
Patent number: 10658382Abstract: An elevationally-extending string of memory cells comprises an upper stack elevationally over a lower stack. The upper and lower stacks individually comprise vertically-alternating tiers comprising control gate material of individual charge storage field effect transistors vertically alternating with insulating material. An upper stack channel pillar extends through multiple of the vertically-alternating tiers in the upper stack and a lower stack channel pillar extends through multiple of the vertically-alternating tiers in the lower stack. Tunnel insulator, charge storage material, and control gate blocking insulator is laterally between the respective upper and lower stack channel pillars and the control gate material. A conductive interconnect comprising conductively-doped semiconductor material is elevationally between and electrically couples the upper and lower stack channel pillars together. The conductively-doped semiconductor material comprises a first conductivity-producing dopant.Type: GrantFiled: April 17, 2019Date of Patent: May 19, 2020Assignee: Micron Technology, Inc.Inventors: John D. Hopkins, David Daycock, Yushi Hu, Christopher Larsen, Dimitrios Pavlopoulos
-
Publication number: 20200083059Abstract: A method used in forming an array of elevationally-extending strings of memory cells comprises forming a stack comprising vertically-alternating insulative tiers and wordline tiers. The stack comprises an etch-stop tier between a first tier and a second tier of the stack. The etch-stop tier is of different composition from those of the insulative tiers and the wordline tiers. Etching is conducted into the insulative tiers and the wordline tiers that are above the etch-stop tier to the etch-stop tier to form channel openings that have individual bases comprising the etch-stop tier. The etch-stop tier is penetrated through to extend individual of the channel openings there-through. After extending the individual channel openings through the etch-stop tier, etching is conducted into and through the insulative tiers and the wordline tiers that are below the etch-stop tier to extend the individual channel openings deeper into the stack below the etch-stop tier.Type: ApplicationFiled: September 11, 2018Publication date: March 12, 2020Applicant: Micron Technology, Inc.Inventors: John D. Hopkins, Gordon A. Haller, Tom J. John, Anish A. Khandekar, Christopher Larsen, Kunal Shrotri