Abstract: Extruded tantalum billets and niobium billets are described having a substantially uniform grain size and preferably an average grain size of about 150 microns or less and more preferably an average grain size of about 100 microns or less. The extruded billet can then be forged or processed by other conventional techniques to form end use products such as sputtering targets. A process for making the extruded tantalum billets or niobium billets is also described and involves extruding a starting billet at a sufficient temperature and for a sufficient time to at least partially recrystallize the billet and form the extruded billet of the present invention.

Abstract: A method of forming a sputtering target and other metal articles having controlled oxygen and nitrogen content levels and the articles so formed are described. The method includes surface-nitriding a deoxidized metal powder and further includes consolidating the powder by a powder metallurgy technique. Preferred metal powders include, but are not limited to, valve metals, including tantalum, niobium, and alloys thereof.

Abstract: A method of forming a sputtering target and other metal articles having controlled oxygen and nitrogen content levels and the articles so formed are described. The method includes surface-nitriding a deoxidized metal powder and further includes consolidating the powder by a powder metallurgy technique. Preferred metal powders include, but are not limited to, valve metals, including tantalum, niobium, and alloys thereof.

Abstract: A method of forming a sputtering target and other metal articles having controlled oxygen and nitrogen content levels and the articles so formed are described. The method includes surface-nitriding a deoxidized metal powder and further includes consolidating the powder by a powder metallurgy technique. Preferred metal powders include, but are not limited to, valve metals, including tantalum, niobium, and alloys thereof.

Abstract: High purity tantalum metals and alloys containing the same are described. The tantalum metal preferably has a purity of at least 99.995% and more preferably at least 99.999%. In addition, tantalum metal and alloys thereof are described, which either have a grain size of about 50 microns or less, or a texture in which a (100) intensity within any 5% increment of thickness is less than about 15 random, or an incremental log ratio of (111):(100) intensity of greater than about ?4.0, or any combination of these properties. Also described are articles and components made from the tantalum metal which include, but are not limited to, sputtering targets, capacitor cans, resistive film layers, wire, and the like. Also disclosed is a process for making the high purity metal which includes the step of reacting a salt-containing tantalum with at least one compound capable of reducing this salt to tantalum powder and a second salt in a reaction container.

Abstract: Extruded tantalum billets and niobium billets are described having a substantially uniform grain size and preferably an average grain size of about 150 microns or less and more preferably an average grain size of about 100 microns or less. The extruded billet can then be forged or processed by other conventional techniques to form end use products such as sputtering targets. A process for making the extruded tantalum billets or niobium billets is also described and involves extruding a starting billet at a sufficient temperature and for a sufficient time to at least partially recrystallize the billet and form the extruded billet of the present invention.

Abstract: Extruded tantalum billets and niobium billets are described having a substantially uniform grain size and preferably an average grain size of about 150 microns or less and more preferably an average grain size of about 100 microns or less. The extruded billet can then be forged or processed by other conventional techniques to form end use products such as sputtering targets. A process for making the extruded tantalum billets or niobium billets is also described and involves extruding a starting billet at a sufficient temperature and for a sufficient time to at least partially recrystallize the billet and form the extruded billet of the present invention.

Abstract: Sputtering targets and methods of making sputtering targets are described. The method includes the steps of: providing a sputtering metal workpiece made of a valve metal; transverse cold-rolling the sputtering metal workpiece to obtain a rolled workpiece; and cold-working the rolled workpiece to obtain a shaped workpiece. The sputtering targets exhibits a substantially consistent grain structure and/or texture on at least the sidewalls.

Abstract: High purity tantalum metals and alloys containing the same are described. The tantalum metal preferably has a purity of at least 99.995% and more preferably at least 99.999%. In addition, tantalum metal and alloys thereof are described, which either have a grain size of about 50 microns or less, or a texture in which a (100) intensity within any 5% increment of thickness is less than about 15 random, or an incremental log ratio of (111):(100) intensity of greater than about ?4.0, or any combination of these properties. Also described are articles and components made from the tantalum metal which include, but are not limited to, sputtering targets, capacitor cans, resistive film layers, wire, and the like. Also disclosed is a process for making the high purity metal which includes the step of reacting a salt-containing tantalum with at least one compound capable of reducing this salt to tantalum powder and a second salt in a reaction container.

Abstract: A method of producing a valve metal mill form having dimensions sufficient to be divided to form a plurality of sputter targets is described. The method includes multidirectional deformation of an ingot to form a mill form having a preferred average grain size of about 100 microns or less and/or a texture substantially void of textural bands.

Abstract: A method of forming a sputtering target and other metal articles having controlled oxygen and nitrogen content levels and the articles so formed are described. The method includes surface-nitriding a deoxidized metal powder and further includes consolidating the powder by a powder metallurgy technique. Preferred metal powders include, but are not limited to, valve metals, including tantalum, niobium, and alloys thereof.

Abstract: The present invention relates to an improvement in the manufacture of metal blanks, discs, and sputtering targets by flattening only one of the two surfaces of a metal plate. The elimination of flattening the metal plate's second surface results in a significant cost reduction. The metal plate of the present invention preferably has a single-side flatness of 0.005 inches or less, which improves the reliability of the bond between the target blank and a backing plate. Preferred metals include, but are not limited to, tantalum, niobium, titanium, and alloys thereof. The present invention also relates to machining the first side of a metal plate, bonding the first side to a backing plate, and then optionally machining the second side of the metal plate.

Abstract: High purity tantalum metals and alloys containing the same are described. The tantalum metal preferably has a purity of at least 99.995% and more preferably at least 99.999%. In addition, tantalum metal and alloys thereof are described, which either have a grain size of about 50 microns or less, or a texture in which a (100) intensity within any 5% increment of thickness is less than about 15 random, or an incremental log ratio of (111):(100) intensity of greater than about ?4.0, or any combination of these properties. Also described are articles and components made from the tantalum metal which include, but are not limited to, sputtering targets, capacitor cans, resistive film layers, wire, and the like. Also disclosed is a process for making the high purity metal which includes the step of reacting a salt-containing tantalum with at least one compound capable of reducing this salt to tantalum powder and a second salt in a reaction container.

Abstract: Sputtering targets and methods of making sputtering targets are described. The method includes the steps of: providing a sputtering metal workpiece made of a valve metal; transverse cold-rolling the sputtering metal workpiece to obtain a rolled workpiece; and cold-working the rolled workpiece to obtain a shaped workpiece. The sputtering targets exhibits a substantially consistent grain structure and/or texture on at least the sidewalls.

Abstract: High purity niobium metals and alloys containing the same are described. The niobium metal preferably has a purity of at least 99.99% and more preferably at least 99.999%. In addition, niobium metal and alloys thereof are described, which either have a grain size of about 150 microns or less, or a texture in which a (100) intensity within any 5% increment of thickness is less than about 30 random, or an incremental log ratio of (111):(100) intensity of greater than about ?4.0, or any combination of these properties. Also described are articles and components made from the niobium metal which include, but are not limited to, sputtering targets, capacitor cans, resistive film layers, wire, and the like. Also disclosed is a process for making the high purity niobium metal which includes the step of reacting a salt-containing niobium and a metal salt along with at least one compound capable of reducing the salt-containing niobium to niobium and in a reaction container.

Abstract: A method of forming a sputtering target assembly is described that involves explosively bonding a target grade plate and a backing plate member to form a bonded preform having dimensions such that a large target or several target assemblies can be obtained. The method includes optionally partitioning the bonded preform into a plurality of sputtering target assemblies. An interlayer can optionally be disposed between the target grade plate and the backing plate member before bonding. A bond quality test sample can be produced by the method. The sputtering target assemblies, the bonded preform, and the bond quality test sample are further described.

Abstract: A method of supplying a sputter target, including, supplying a sputtering target assembly to a user or an agent thereof where a sputter target of the sputtering target assembly is sputtered to form a spent target assembly; determining an amount of the sputter target consumed by the sputtering; and charging the user based on the amount sputtered or an amount not returned, is described.

Abstract: The present invention relates to an improvement in the manufacture of metal blanks, discs, and sputtering targets by flattening only one of the two surfaces of a metal plate. The elimination of flattening the metal plate's second surface results in a significant cost reduction. The metal plate of the present invention preferably has a single-side flatness of 0.005 inches or less, which improves the reliability of the bond between the target blank and a backing plate. Preferred metals include, but are not limited to, tantalum, niobium, titanium, and alloys thereof. The present invention also relates to machining the first side of a metal plate, bonding the first side to a backing plate, and then optionally machining the second side of the metal plate.

Abstract: A method of forming a sputtering target and other metal articles having controlled oxygen and nitrogen content levels and the articles so formed are described. The method includes surface-nitriding a deoxidized metal powder and further includes consolidating the powder by a powder metallurgy technique. Preferred metal powders include, but are not limited to, valve metals, including tantalum, niobium, and alloys thereof.

Abstract: A method of supplying a metal material including supplying from a supplier a quantity of metal material to a sputtering target manufacturer or other user for forming a sputtering target or other metal article from a portion of the quantity of metal material supplied, returning a portion of the supplied material not present in the finished sputtering target or other metal article to the supplier or the supplier's agent, and charging the manufacturer or user only for a portion of the supplied material not returned is described.