Patents by Inventor Christopher A. Rowland
Christopher A. Rowland has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20190393019Abstract: A system having an auxiliary plasma source, disposed proximate the workpiece, for use with an ion beam is disclosed. The auxiliary plasma source is used to create ions and radicals which drift toward the workpiece and may form a film. The ion beam is then used to provide energy so that the ions and radicals can process the workpiece. Further, various applications of the system are also disclosed. For example, the system can be used for various processes including deposition, implantation, etching, pre-treatment and post-treatment. By locating an auxiliary plasma source close to the workpiece, processes that were previously not possible may be performed. Further, two dissimilar processes, such as cleaning and implanting or implanting and passivating can be performed without removing the workpiece from the end station.Type: ApplicationFiled: June 22, 2018Publication date: December 26, 2019Inventors: Christopher Hatem, Peter F. Kurunczi, Christopher A. Rowland, Joseph C. Olson, Anthony Renau
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Publication number: 20190090338Abstract: Embodiments described herein generally relate to plasma assisted or plasma enhanced processing chambers. More specifically, embodiments herein relate to electrostatic chucking (ESC) substrate supports configured to provide pulsed DC voltage, and methods of applying a pulsed DC voltage, to a substrate during plasma assisted or plasma enhanced semiconductor manufacturing processes.Type: ApplicationFiled: September 20, 2017Publication date: March 21, 2019Inventors: Travis Lee KOH, Haitao WANG, Philip Allan KRAUS, Vijay D. PARKHE, Daniel DISTASO, Christopher A. ROWLAND, Mark MARKOVSKY, Robert CASANOVA
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Publication number: 20180240670Abstract: A method of doping a substrate. The method may include implanting a dose of a helium species into the substrate through a surface of the substrate at an implant temperature of 300° C. or greater. The method may further include depositing a doping layer containing a dopant on the surface of the substrate, and annealing the substrate at an anneal temperature, the anneal temperature being greater than the implant temperature.Type: ApplicationFiled: April 16, 2018Publication date: August 23, 2018Applicant: Varian Semiconductor Equipment Associates, Inc.Inventors: Christopher R. Hatem, Christopher A. Rowland
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Publication number: 20180221949Abstract: An additive manufacturing system includes a platen, a dispenser configured to deliver a powder in a linear region that extends across less than all of a width of the platen, a drive system configured to move the dispenser along the first axis and a perpendicular second axis, a controller, and an energy source configured to selectively fuse a layer of powder. The controller is configured to cause the drive system to move the dispenser along the second axis a first time such that the linear region makes a first sweep along the second axis to deposit the powder in a first swath over the platen, thereafter along the first axis, and thereafter along the second axis a second time such that the first linear region makes a second sweep along the second axis to deposit the powder in a parallel second swath over the platen.Type: ApplicationFiled: March 30, 2018Publication date: August 9, 2018Inventors: Christopher A. Rowland, Anantha K. Subramani, Kasiraman Krishnan, Kartik Ramaswamy, Thomas B. Brezoczky, Swaminathan Srinivasan, Jennifer Y. Sun, Simon Yavelberg, Srinivas D. Nemani, Nag B. Patibandla, Hou T. Ng
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Publication number: 20180221948Abstract: An additive manufacturing system includes a platen to support an object to be fabricated, a dispenser assembly positioned above the platen, and an energy source configured to selectively fuse a layer of powder. The dispenser assembly includes a first dispenser, a second dispenser, and a drive system. The first dispenser delivers a first powder in a first linear region that extends along a first axis, and the second dispenser delivers a second powder in a second linear region that extends parallel to the first linear region and is offset from the first linear region along a second axis perpendicular to the first axis. The drive system a drive system moves the support with the first dispenser and second dispenser together along the second axis.Type: ApplicationFiled: March 30, 2018Publication date: August 9, 2018Inventors: Christopher A. Rowland, Anantha K. Subramani, Kasiraman Krishnan, Kartik Ramaswamy, Thomas B. Brezoczky, Swaminathan Srinivasan, Jennifer Y. Sun, Simon Yavelberg, Srinivas D. Nemani, Nag B. Patibandla, Hou T. Ng
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Patent number: 9953835Abstract: A method of doping a substrate. The method may include implanting a dose of a helium species into the substrate through a surface of the substrate at an implant temperature of 300° C. or greater. The method may further include depositing a doping layer containing a dopant on the surface of the substrate, and annealing the substrate at an anneal temperature, the anneal temperature being greater than the implant temperature.Type: GrantFiled: January 23, 2017Date of Patent: April 24, 2018Assignee: Varian Semiconductor Equipment Associates, Inc.Inventors: Christopher R. Hatem, Christopher A. Rowland
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Publication number: 20180082824Abstract: A workpiece processing apparatus allowing independent control of the voltage applied to the shield ring and the workpiece is disclosed. The workpiece processing apparatus includes a platen. The platen includes a dielectric material on which a workpiece is disposed. A bias electrode is disposed beneath the dielectric material. A shield ring, which is constructed from a metal, ceramic, semiconductor or dielectric material, is arranged around the perimeter of the workpiece. A ring electrode is disposed beneath the shield ring. The ring electrode and the bias electrode may be separately powered. This allows the surface voltage of the shield ring to match that of the workpiece, which causes the plasma sheath to be flat. Additionally, the voltage applied to the shield ring may be made different from that of the workpiece to compensate for mismatches in geometries. This improves uniformity of incident angles along the outer edge of the workpiece.Type: ApplicationFiled: September 19, 2016Publication date: March 22, 2018Inventors: Alexandre Likhanskii, Maureen Petterson, John Hautala, Anthony Renau, Christopher A. Rowland, Costel Biloiu
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Publication number: 20180065178Abstract: An additive manufacturing system that includes a platen, a feed material delivery system configured to deliver feed material to a location on the platen specified by a computer aided design program and a heat source configured to raise a temperature of the feed material simultaneously across all of the layer or across a region that extends across a width of the platen and scans the region across a length of the platen. The heat source can be an array of heat lamps, or a plasma source.Type: ApplicationFiled: October 9, 2017Publication date: March 8, 2018Inventors: Christopher A. Rowland, Anantha K. Subramani, Kasiraman Krishnan, Kartik Ramaswamy, Thomas B. Brezoczky, Swaminathan Srinivasan, Jennifer Y. Sun, Simon Yavelberg, Srinivas D. Nemani, Nag B. Patibandla, Hou T. Ng
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Publication number: 20170203363Abstract: An additive manufacturing system that includes a platen, a feed material delivery system configured to deliver feed material to a location on the platen specified by a computer aided design program and a heat source configured to raise a temperature of the feed material simultaneously across all of the layer or across a region that extends across a width of the platen and scans the region across a length of the platen. The heat source can be an array of heat lamps, or a plasma source.Type: ApplicationFiled: July 8, 2015Publication date: July 20, 2017Inventors: Christopher A. Rowland, Anantha K. Subramani, Kasiraman Krishnan, Kartik Ramaswamy, Thomas B. Brezoczky, Swaminathan Srinivasan, Jennifer Y. Sun, Simon Yavelberg, Srinivas D. Nemani, Nag B. Patibandla, Hou T. Ng
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Publication number: 20170203364Abstract: An additive manufacturing system includes a platen, a feed material dispenser apparatus configured to deliver a feed material over the platen, a laser configured to produce a laser beam, a controller configured to direct the laser beam to locations specified by data stored in a computer-readable medium to cause the feed material to fuse, and a plasma source configured to produce ions that are directed to substantially the same location on the platen as the laser beam.Type: ApplicationFiled: July 16, 2015Publication date: July 20, 2017Inventors: Kartik Ramaswamy, Anantha K. Subramani, Kasiraman Krishnan, Jennifer Y. Sun, Srinivas D. Nemani, Thomas B. Brezoczky, Christopher A. Rowland, Simon Yavelberg, Swaminathan Srinivasan, Nag B. Patibandla, Ellie Y. Yieh, Hou T. Ng
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Publication number: 20170182556Abstract: An additive manufacturing system includes a platen, a feed material dispenser apparatus configured to deliver a feed material onto the platen, a laser source configured to produce a laser beam during use of the additive manufacturing system, a controller configured to direct the laser beam to locations on the platen specified by a computer aided design program to cause the feed material to fuse, a gas source configured to supply gas, and a nozzle configured to accelerate and direct the gas to substantially the same location on the platen as the laser beam.Type: ApplicationFiled: July 16, 2015Publication date: June 29, 2017Inventors: Kartik Ramaswamy, Anantha K. Subramani, Kasiraman Krishnan, Jennifer Y. Sun, Thomas B. Brezoczky, Christopher A. Rowland, Srinivas D. Nemani, Swaminathan Srinivasan, Simon Yavelberg, Ellie Y. Yieh, Hou T. Ng
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Publication number: 20170178908Abstract: A method of doping a substrate. The method may include implanting a dose of a helium species into the substrate through a surface of the substrate at an implant temperature of 300 ° C. or greater. The method may further include depositing a doping layer containing a dopant on the surface of the substrate, and annealing the substrate at an anneal temperature, the anneal temperature being greater than the implant temperature.Type: ApplicationFiled: January 23, 2017Publication date: June 22, 2017Inventors: Christopher R. Hatem, Christopher A. Rowland
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Patent number: 9589802Abstract: A method of doping a substrate. The method may include implanting a dose of a helium species into the substrate through a surface of the substrate at an implant temperature of 300° C. or greater. The method may further include depositing a doping layer containing a dopant on the surface of the substrate, and annealing the substrate at an anneal temperature, the anneal temperature being greater than the implant temperature.Type: GrantFiled: December 22, 2015Date of Patent: March 7, 2017Assignee: Varian Semuconductor Equipment Associates, Inc.Inventors: Christopher R. Hatem, Christopher A. Rowland
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Patent number: 9018829Abstract: An ion source includes an ion chamber housing defining an ion source chamber, the ion chamber housing having a side with a plurality of apertures. The ion source also includes an antechamber housing defining an antechamber. The antechamber housing shares the side with the plurality of apertures with the ion chamber housing. The antechamber housing has an opening to receive a gas from a gas source. The antechamber is configured to transform the gas into an altered state having excited neutrals that is provided through the plurality of apertures into the ion source chamber.Type: GrantFiled: July 31, 2013Date of Patent: April 28, 2015Assignee: Varian Semiconductor Equipment Associates, Inc.Inventors: Bon-Woong Koo, Victor Benveniste, Christopher A. Rowland, Craig R. Chaney, Frank Sinclair, Neil J. Bassom
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Publication number: 20130313443Abstract: An ion source includes an ion chamber housing defining an ion source chamber, the ion chamber housing having a side with a plurality of apertures. The ion source also includes an antechamber housing defining an antechamber. The antechamber housing shares the side with the plurality of apertures with the ion chamber housing. The antechamber housing has an opening to receive a gas from a gas source. The antechamber is configured to transform the gas into an altered state having excited neutrals that is provided through the plurality of apertures into the ion source chamber.Type: ApplicationFiled: July 31, 2013Publication date: November 28, 2013Applicant: VARIAN SEMICONDUCTOR EQUIPMENT ASSOCIATES, INC.Inventors: Bon-Woong Koo, Victor Benveniste, Christopher A. Rowland, Craig R. Chaney, Frank Sinclair, Neil J. Bassom
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Patent number: 8501624Abstract: An ion source that utilizes exited and/or atomic gas injection is disclosed. In an ion beam application, the source gas can be used directly, as it is traditionally supplied. Alternatively or additionally, the source gas can be altered by passing it through a remote plasma source prior to being introduced to the ion source chamber. This can be used to create excited neutrals, heavy ions, metastable molecules or multiply charged ions. In another embodiment, multiple gasses are used, where one or more of the gasses are passed through a remote plasma generator. In certain embodiments, the gasses are combined in a single plasma generator before being supplied to the ion source chamber. In plasma immersion applications, plasma is injected into the process chamber through one or more additional gas injection locations. These injection locations allow the influx of additional plasma, produced by remote plasma sources external to the process chamber.Type: GrantFiled: December 4, 2008Date of Patent: August 6, 2013Assignee: Varian Semiconductor Equipment Associates, Inc.Inventors: Bon-Woong Koo, Victor Benveniste, Christopher A. Rowland, Craig R. Chaney, Frank Sinclair, Neil J. Bassom
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Publication number: 20120280442Abstract: A media carrier, adapted to hold a plurality of pieces of magnetic media, is disclosed. This media carrier can be placed on the workpiece support, or platen, allowing the magnetic media to be processed. In some embodiments, the media carrier is designed such that only one side of the magnetic media is exposed, requiring a robot or other equipment to invert each piece of media in the carrier to process the second side. In other embodiments, the media carrier is designed such that both sides of the magnetic media are exposed. In this scenario, the media carrier is inverted on the platen to allow processing of the second side.Type: ApplicationFiled: May 5, 2011Publication date: November 8, 2012Applicant: VARIAN SEMICONDUCTOR EQUIPMENT ASSOCIATES, INC.Inventors: Richard J. Hertel, Julian G. Blake, Edward D. MacIntosh, Alexander C. Kontos, Frank Sinclair, Christopher A. Rowland, Mayur Jagtap, Sankar Ganesh Kolappan
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Patent number: 8064071Abstract: A sheet measurement apparatus has a sheet disposed in a melt. The measurement system uses a beam to determine a dimension of the sheet. This dimension may be, for example, height or width. The beam may be, for example, collimated light, a laser, x-rays, or gamma rays. The production of the sheet may be altered based on the measurements.Type: GrantFiled: March 12, 2009Date of Patent: November 22, 2011Assignee: Varian Semiconductor Equipment Associates, Inc.Inventors: Christopher A. Rowland, Peter L. Kellerman, Frank Sinclair, Julian G. Blake, Nicholas P. T. Bateman
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Patent number: 7807961Abstract: Techniques for ion implantation of molecular ions are disclosed. In one particular exemplary embodiment, the techniques may be realized as an apparatus for ion implantation comprising an ion implanter for implanting a target material with a molecular ion at a predetermined temperature to improve at least one of strain and amorphization of the target material, wherein the molecular ion is generated in-situ within an ion source.Type: GrantFiled: October 8, 2008Date of Patent: October 5, 2010Assignee: Varian Semiconductor Equipment Associates, Inc.Inventors: Christopher R. Hatem, Christopher A. Rowland
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Publication number: 20100140077Abstract: An ion source that utilizes exited and/or atomic gas injection is disclosed. In an ion beam application, the source gas can be used directly, as it is traditionally supplied. Alternatively or additionally, the source gas can be altered by passing it through a remote plasma source prior to being introduced to the ion source chamber. This can be used to create excited neutrals, heavy ions, metastable molecules or multiply charged ions. In another embodiment, multiple gasses are used, where one or more of the gasses are passed through a remote plasma generator. In certain embodiments, the gasses are combined in a single plasma generator before being supplied to the ion source chamber. In plasma immersion applications, plasma is injected into the process chamber through one or more additional gas injection locations. These injection locations allow the influx of additional plasma, produced by remote plasma sources external to the process chamber.Type: ApplicationFiled: December 4, 2008Publication date: June 10, 2010Inventors: Bon-Woong Koo, Victor Benveniste, Christopher A. Rowland, Craig R. Chaney, Frank Sinclair, Neil J. Bassom