Abstract: A semiconductor structure can include an active device FET region having a FET and a photonics region having a photonic device including a waveguide. A semiconductor structure can include an active device FET region having a FET and a trench isolation region having a photonic device that includes a waveguide. A method can include forming a FET at an active device FET region of a semiconductor structure. A method can include forming a photonic device at a trench isolation region of a semiconductor structure.

Abstract: A semiconductor structure can include an active device FET region having a FET and a photonics region having a photonic device including a waveguide. A semiconductor structure can include an active device FET region having a FET and a trench isolation region having a photonic device that includes a waveguide. A method can include forming a FET at an active device FET region of a semiconductor structure. A method can include forming a photonic device at a trench isolation region of a semiconductor structure.

Abstract: A method and apparatus of securing and tensioning a printing form in an apparatus having a rotatable drum, comprising positioning a first portion of the printing form over a first set of pins that are coupled to a surface of the drum. The first portion of the printing form is then stamped onto the first set of pins thereby securing the first portion of the printing form to the drum. A rotatable member having a second set of pins is rotated so that the circumferential distance between the first set of pins and the second set of pins, is about equal to the length of the printing form. The drum is rotated until a second portion of the printing form is positioned above the second set of pins. The second portion of the printing form is then stamped onto the second set of pins.

Abstract: A method and apparatus of securing and tensioning a printing form in an apparatus having a rotatable drum, comprising positioning a first portion of the printing form over a first set of pins that are coupled to a surface of the drum. The first portion of the printing form is then stamped onto the first set of pins thereby securing the first portion of the printing form to the drum. A rotatable member having a second set of pins is rotated so that the circumferential distance between the first set of pins and the second set of pins, is about equal to the length of the printing form. The drum is rotated until a second portion of the printing form is positioned above the second set of pins. The second portion of the printing form is then stamped onto the second set of pins.

Abstract: Methods for source/drain implantation and strain transfer to a channel of a semiconductor device and a related semiconductor device are disclosed. In one embodiment, the method includes using a first size spacer for deep source/drain implantation adjacent a gate region of a semiconductor device; and using a second, smaller size spacer for silicide formation adjacent the gate region and transferring strain from a stress liner to a channel underlying the gate region. One embodiment of a semiconductor device may include a gate region atop a substrate; a spacer including a spacer core and an outer spacer member about the spacer core; a deep source/drain region within the substrate and distanced from the spacer; and a silicide region within the substrate and overlapping and extending beyond the deep source/drain region, the silicide region aligned to the spacer.

Abstract: Process for enhancing strain in a channel with a stress liner, spacer, process for forming integrated circuit and integrated circuit. A first spacer composed of an first oxide and first nitride layer is applied to a gate electrode on a substrate, and a second spacer composed of a second oxide and second nitride layer is applied. Deep implanting of source and drain in the substrate occurs, and removal of the second nitride, second oxide, and first nitride layers.

Abstract: A lateral trench in a semiconductor substrate is formed by the following steps. Form a lateral implant mask (LIM) over a top surface of the semiconductor substrate. Implant a heavy dopant concentration into the substrate through the LIM to form a lateral implant region (LIR) in the substrate. Strip the LIM exposing the top surface of the substrate. Form an epitaxial silicon layer over the top surface of the substrate burying the LIR. Form a trench mask over the epitaxial layer. Etch a trench reaching through the epitaxial layer and the LIR. Form oxidized trench sidewalls, an oxidized trench bottom and oxidized sidewalls of the LIR. Etch the oxidized sidewalls of the LIR until the LIR is exposed. Form laterally extending trenches by etching away the LIR.