Abstract: A method of forming a substrate support for use in a processing chamber includes forming a porous region in each of a plurality of ceramic green sheets, stacking the plurality of ceramic green sheets, each having the porous region formed therein, to form a ceramic laminate, and sintering the ceramic laminate to form a monolithic ceramic body having a porous plug formed therein. The porous plug includes the porous regions in the plurality of ceramic green sheets that are sintered.

Abstract: A method of coating an article for a process chamber is provided. The method includes performing an ion assisted deposition (IAD) using a dual source include a first source and a second source to deposit a protective layer on at least one surface of the article. The first source includes a metal oxide and the second source includes a metal fluoride. When the IAD is performed, a ratio of the metal oxide to the metal fluoride is controlled, such that a gradient in fluoride content between a bottom of the protective layer and the top of the protective layer occurs.

Abstract: A substrate support for use in a processing chamber to hold a substrate thereon includes a substrate support body, and a plurality of mesas on recessed surfaces of the substrate support body, wherein heights of the plurality of mesas from the recessed surfaces vary over the substrate support body between at least two different heights.

Abstract: Embodiments disclosed herein include a puck for an electrostatic chuck. In an embodiment, the puck comprises a substrate with a top surface and a bottom surface. In an embodiment, a first material composition is at the top surface of the substrate, and a second material composition is at the bottom surface of the substrate. In an embodiment, a composition gradient is provided through the substrate between the top surface and the bottom surface.

Abstract: An article includes a body and an ultrasonic bonded layer deposited on the body. The ultrasonic bonded layer includes a first layer of a first material. The first material includes a metal or metal alloy, The ultrasonic bonded layer further includes a second layer of a second material bonded to the first layer. The second material includes a metal matrix composite material.

Abstract: Described herein is a method for forming a multi-layer coating including a first layer comprising a metal oxide layer on a surface of a chamber component and a second layer comprising a rare earth fluoride layer on the metal oxide layer. The method further includes removing surface oxidation on the rare earth fluoride layer using a wet clean process.

Abstract: An embodiment of a method includes placing a substrate on a substrate support assembly that is at least partially positioned in a processing chamber. The substrate support assembly includes a body having an outer surface and an outer coating layer disposed at least partially over the outer surface, the outer coating layer comprising yttrium fluoride (YF3). In addition, the method includes contacting a surface of the substrate with a process gas in the processing chamber at a process temperature that is about 40° C. or less to remove oxides from the surface.

Abstract: A system includes a radiation source configured to emit a radiation beam, a first optical sensor configured to detect a first intensity of a first portion of the radiation beam reflected from a surface of an object, a second optical sensor configured to detect a second intensity of a second portion of the radiation beam scattered by the surface of the object, and a third optical sensor configured to detect a third intensity of a third portion of the radiation beam scattered by the surface of the object. The system further includes a processing device communicatively coupled to the first optical sensor, the second optical sensor, and the third optical sensor. The processing device is configured to determine a roughness or an emissivity of the surface of the object based on a comparison of two or more of the first intensity, the second intensity, or the third intensity.

Abstract: A substrate support carrier includes an electrostatic chuck (ESC) assembly includes a top ceramic disc having a recess formed from a lower surface of the top ceramic disc, a bottom ceramic disc having a hole through the bottom ceramic disc, an upper bonding layer interposed between the lower surface of the top ceramic disc and an upper surface of the bottom ceramic disc, and a porous plug within at least one of the recess of the top ceramic disc and the hole of the bottom ceramic disc, a temperature control base, and a lower bonding layer interposed between a lower surface of the bottom ceramic disc and an upper surface of the temperature control base.

Abstract: A substrate support for use in a processing chamber to hold a substrate thereon includes a substrate support body, and a plurality of mesas on recessed surfaces of the substrate support body, wherein heights of the plurality of mesas from the recessed surfaces vary over the substrate support body between at least two different heights.

Abstract: A method of forming a substrate support for use in a processing chamber includes forming a porous region in each of a plurality of ceramic green sheets, stacking the plurality of ceramic green sheets, each having the porous region formed therein, to form a ceramic laminate, and sintering the ceramic laminate to form a monolithic ceramic body having a porous plug formed therein. The porous plug includes the porous regions in the plurality of ceramic green sheets that are sintered.

Abstract: Embodiments of the present disclosure generally relate to a substrate support having a surface coating which reduces defect formation and back side metal contamination during substrate processing. A support body includes a body having an outer surface and a surface coating formed from a non-metal or a reduced-metal material disposed over at least a top surface of the outer surface of the body. In an embodiment, the surface coating includes a two-part coating having an optional first coating layer formed over an entire outer surface of the support body.

Abstract: Embodiments disclosed herein include a puck for an electrostatic chuck. In an embodiment, the puck comprises a substrate with a top surface and a bottom surface. In an embodiment, a first material composition is at the top surface of the substrate, and a second material composition is at the bottom surface of the substrate. In an embodiment, a composition gradient is provided through the substrate between the top surface and the bottom surface.

Abstract: An apparatus adapted to detect a particle present on a bevel of a wafer. The apparatus includes a substrate support and a sensor housing adapted to receive an edge of the wafer. The sensor housing includes one or more probe electrodes and one or more position sensors. The apparatus also includes a translatable stage coupled to the sensor housing. The translatable stage is adapted to control the distance between the bevel of the wafer and the one or more position sensors. The apparatus further includes electrical circuitry electrically coupled to the substrate support and the one or more probe electrodes and adapted to generate an electric field between the bevel of the wafer and the one or more probe electrodes, detection circuitry electrically coupled to the electrical circuitry, and a processor adapted to process electrical signals and thereby detect the particle present on the bevel of the wafer.

Abstract: A method and apparatus are provided for plating metal onto a substrate. The method generally includes applying a plating solution comprising at least a leveler to a substrate; substantially filling features in the substrate by plating metal ions from the plating solution onto the substrate, and applying sonic energy to the plating solution across a surface of the substrate prior to completely filling the features.

Abstract: Methods of preventing air-liquid interfaces on the surface of a wafer in order to prevent the formation of particle defects on a wafer are presented. The air-liquid interfaces may be prevented by covering the entire surface of the wafer with liquid at all times during a cleaning process while the surface of the wafer is hydrophobic. Methods of preventing the formation of silica agglomerates in a liquid during a pH transition from an alkaline pH to a neutral pH are also presented, including minimizing the turbulence in the liquid solution and reducing the temperature of the liquid solution during the transition.