Abstract: A digital lithography system may adjust a wavelength of the light source to compensate for tilt errors in micromirrors while maintaining a perpendicular direction for the reflected light. Adjacent pixels may have a phase shift that is determined by an optical path difference between their respective light beams. This phase shift may be preselected to be any value by generating a corresponding wavelength at the light source based on the optical path difference. To generate a specific wavelength corresponding to the desired phase shift, the light source may produce multiple light components that have wavelengths that bracket the wavelength of the selected phase shift. The intensities of these components may then be controlled individually to produce an effect that approximates the selected phase shift on the substrate.

Abstract: An imaging system for capturing spatial images of biological tissue samples may include an imaging chamber configured to hold a biological tissue sample placed in the imaging system; a light source configured to illuminate the biological tissue sample to activate one or more fluorophores in the biological tissue sample; a Time Delay and Integration (TDI) imager comprising a plurality of partitions, where the plurality of partitions may be configured to capture images at a plurality of different depths in the biological tissue sample simultaneously during a scan by the TDI imager; and a controller configured to cause the TDI imager to scan the biological tissue sample.

Abstract: A digital lithography system may adjust a wavelength of the light source to compensate for tilt errors in micromirrors while maintaining a perpendicular direction for the reflected light. Adjacent pixels may have a phase shift that is determined by an optical path difference between their respective light beams. This phase shift may be preselected to be any value by generating a corresponding wavelength at the light source based on the optical path difference. To generate a specific wavelength corresponding to the desired phase shift, the light source may produce multiple light components that have wavelengths that bracket the wavelength of the selected phase shift. The intensities of these components may then be controlled individually to produce an effect that approximates the selected phase shift on the substrate.

Abstract: Methods, systems and apparatus for decreasing total distortion of a maskless lithography process are disclosed. Some embodiments provide methods, systems and apparatus for decreasing total distortion without physical modification of the apparatus.

Abstract: Methods, systems and apparatus for decreasing total distortion of a maskless lithography process are disclosed. Some embodiments provide methods, systems and apparatus for decreasing total distortion without physical modification of the apparatus.

Abstract: A method for manufacturing a polarizer apparatus is described. The method includes forming a patterned resist structure having lines with a top surface and two or more side surfaces; depositing a conductive material over the patterned resist structure, wherein the conductive material is provided at the top surface and the two or more side surfaces, and wherein a layer structure is formed; and etching the layer structure to remove the conductive material from the top surface of the lines to form conductive lines of the conductive material at the two or more side surfaces.

Abstract: A method for manufacturing a polarizer apparatus is described. The method includes forming a patterned resist structure having lines with a top surface and two or more side surfaces; depositing a conductive material over the patterned resist structure, wherein the conductive material is provided at the top surface and the two or more side surfaces, and wherein a layer structure is formed; and etching the layer structure to remove the conductive material from the top surface of the lines to form conductive lines of the conductive material at the two or more side surfaces.

Abstract: Methods and apparatuses for minimizing line edge/width roughness in lines formed by photolithography are provided. The random diffusion of acid generated by a photoacid generator during a lithography process contributes to line edge/width roughness. Methods disclosed herein apply an electric field, a magnetic field, and/or a standing wave during photolithography processes. The field and/or standing wave application controls the diffusion of the acids generated by the photoacid generator along the line and spacing direction, preventing the line edge/width roughness that results from random diffusion. Apparatuses for carrying out the aforementioned methods are also disclosed herein.

Abstract: Embodiments described herein generally relate to a DMD. The DMD includes a base and a plurality of mirrors disposed on the base. Each mirror of the plurality of mirrors has a surface facing away from the base, and a structure is disposed on the surface of each mirror. The structure enhances the reflectance of the surface of each mirror, which enhances the efficiency of light manipulation and delivery.

Abstract: Methods and apparatuses for minimizing line edge/width roughness in lines formed by photolithography are provided. The random diffusion of acid generated by a photoacid generator during a lithography process contributes to line edge/width roughness. Methods disclosed herein apply an electric field, a magnetic field, and/or a standing wave during photolithography processes. The field and/or standing wave application controls the diffusion of the acids generated by the photoacid generator along the line and spacing direction, preventing the line edge/width roughness that results from random diffusion. Apparatuses for carrying out the aforementioned methods are also disclosed herein.

Abstract: Methods and apparatuses for minimizing line edge/width roughness in lines formed by photolithography are provided. The random diffusion of acid generated by a photoacid generator during a lithography process contributes to line edge/width roughness. Methods disclosed herein apply an electric field, a magnetic field, and/or a standing wave during photolithography processes. The field and/or standing wave application controls the diffusion of the acids generated by the photoacid generator along the line and spacing direction, preventing the line edge/width roughness that results from random diffusion. Apparatuses for carrying out the aforementioned methods are also disclosed herein.

Abstract: Multi-beam pattern generators employing yaw correction when writing upon large substrates, and associated methods are disclosed. A multi-beam pattern generator may include a spatial light modulator (SLM) with independently controllable mirrors to reflect light onto a substrate to write a pattern. The pattern may be written in writing cycles where the substrate is moved to writing cycle zone locations. The light is reflected by the SLM onto the substrate by mirrors of the SLM in active positions to write the pattern upon the substrate. By determining a location and yaw of the substrate with respect to the SLM in each writing cycle, some mirrors of the SLM may be digitally controlled to either inactive positions or the active positions to compensate for the yaw of the substrate. In this manner, the pattern written upon the substrate may be precisely written with compensation for yaw.

Abstract: Methods and apparatuses for minimizing line edge/width roughness in lines formed by photolithography are provided. The random diffusion of acid generated by a photoacid generator during a lithography process contributes to line edge/width roughness. Methods disclosed herein apply an electric field and/or a magnetic field during photolithography processes. The field application controls the diffusion of the acids generated by the photoacid generator along the line and spacing direction, preventing the line edge/width roughness that results from random diffusion. Apparatuses for carrying out the aforementioned methods are also disclosed herein.

Abstract: Methods and apparatuses for minimizing line edge/width roughness in lines formed by photolithography are provided. The random diffusion of acid generated by a photoacid generator during a lithography process contributes to line edge/width roughness. Methods disclosed herein apply an electric field, a magnetic field, and/or a standing wave during photolithography processes. The field and/or standing wave application controls the diffusion of the acids generated by the photoacid generator along the line and spacing direction, preventing the line edge/width roughness that results from random diffusion. Apparatuses for carrying out the aforementioned methods are also disclosed herein.

Abstract: Methods and apparatuses for minimizing line edge/width roughness in lines formed by photolithography are provided. The random diffusion of acid generated by a photoacid generator during a lithography process contributes to line edge/width roughness. Methods disclosed herein apply an electric field and/or a magnetic field during photolithography processes. The field application controls the diffusion of the acids generated by the photoacid generator along the line and spacing direction, preventing the line edge/width roughness that results from random diffusion. Apparatuses for carrying out the aforementioned methods are also disclosed herein.

Abstract: Multi-beam pattern generators employing yaw correction when writing upon large substrates, and associated methods are disclosed. A multi-beam pattern generator may include a spatial light modulator (SLM) with independently controllable mirrors to reflect light onto a substrate to write a pattern. The pattern may be written in writing cycles where the substrate is moved to writing cycle zone locations. The light is reflected by the SLM onto the substrate by mirrors of the SLM in active positions to write the pattern upon the substrate. By determining a location and yaw of the substrate with respect to the SLM in each writing cycle, some mirrors of the SLM may be digitally controlled to either inactive positions or the active positions to compensate for the yaw of the substrate. In this manner, the pattern written upon the substrate may be precisely written with compensation for yaw.

Abstract: An anti-reflective hard mask layer left on a radiation-blocking layer during fabrication of a reticle provides functionality when the reticle is used in a semiconductor device manufacturing process.

Abstract: Methods are disclosed for activating dopants in a doped semiconductor substrate. A carbon precursor is flowed into a substrate processing chamber within which the doped semiconductor substrate is disposed. A plasma is formed from the carbon precursor in the substrate processing chamber. A carbon film is deposited over the substrate with the plasma. A temperature of the substrate is maintained while depositing the carbon film less than 500° C. The deposited carbon film is exposed to electromagnetic radiation for a period less than 10 ms, and has an extinction coefficient greater than 0.3 at a wavelength comprised by the electromagnetic radiation.

Abstract: A method of processing a substrate comprising depositing a layer comprising amorphous carbon on the substrate and then exposing the substrate to electromagnetic radiation have one or more wavelengths between about 600 nm and about 1000 nm under conditions sufficient to heat the layer to a temperature of at least about 300° C. is provided. Optionally, the layer further comprises a dopant selected from the group consisting of nitrogen, boron, phosphorus, fluorine, and combinations thereof. In one aspect, the layer comprising amorphous carbon is an anti-reflective coating and an absorber layer that absorbs the electromagnetic radiation and anneals a top surface layer of the substrate. In one aspect, the substrate is exposed to the electromagnetic radiation in a laser annealing process.

Abstract: A method of forming an integrated circuit using an amorphous carbon film. The amorphous carbon film is formed by thermally decomposing a gas mixture comprising a hydrocarbon compound and an inert gas. The amorphous carbon film is compatible with integrated circuit fabrication processes. In one integrated circuit fabrication process, the amorphous carbon film is used as a hardmask. In another integrated circuit fabrication process, the amorphous carbon film is an anti-reflective coating (ARC) for deep ultraviolet (DUV) lithography. In yet another integrated circuit fabrication process, a multi-layer amorphous carbon anti-reflective coating is used for DUV lithography.