Abstract: The invention relates to an electric field device (10) with an ignition protection-type pressure-tight encapsulation for use in explosion-prone regions for controlling and/or regulating a valve unit of a process system, comprising a housing (12), in which a control unit (48) that comprises electronic components and is used as a monitoring, control, and/or regulating unit is arranged, said control unit (48) having a releasable communication connection to an operating unit (62). The housing (12) can be connected to a drive housing of the valve unit via a mechanical interface (42), and the housing has at least one connection feedthrough (44), via which at least one line can be connected that is connected to the control unit (48) via a connection interface (46).

Abstract: The invention relates to an electric field device (10) with an ignition protection-type pressure-tight encapsulation for use in explosion-prone regions for controlling and/or regulating a valve unit of a process system, comprising a housing (12), in which a control unit (48) that comprises electronic components and is used as a monitoring, control, and/or regulating unit is arranged, said control unit (48) having a releasable communication connection to an operating unit (62). The housing (12) can be connected to a drive housing of the valve unit via a mechanical interface (42), and the housing has at least one connection feedthrough (44), via which at least one line can be connected that is connected to the control unit (48) via a connection interface (46).

Abstract: The present invention is directed to methods and systems for calibrating integrated metrology systems and stand-alone metrology systems that acquire wafer state data. In one illustrative embodiment, the method includes providing a plurality of process tools, each of the process tools comprising an integrated metrology system adapted to obtain wafer state data, and providing a plurality of stand-alone metrology tools, each of which are adapted to obtain wafer state data. The method further comprises processing at least one wafer through each of the process tools and each of the stand-alone metrology tools, wherein wafer state data for at least one wafer is acquired in each of the process tools and in each of the stand-alone metrology tools, and calibrating the integrated metrology system in at least one of the process tools or at least one of the stand-alone metrology tools based upon the wafer state data acquired for the wafer.