Abstract: Light emitting devices include an LED that includes an n-type semiconductor layer and a p-type semiconductor layer that is stacked on top of the n-type semiconductor layer. A p-contact metallization stack is on top of the p-type semiconductor layer. An opening extends through the p-type semiconductor layer and the p-contact metallization stack that has a first region that penetrates the p-type semiconductor layer to expose the n-type semiconductor layer and a second region that penetrates the p-contact metallization stack. A bond metal stack is on top of the p-contact metallization stack, and a metal spacer layer is provided between the bond metal stack and the stacked semiconductor layers. The metal spacer layer fills the first region and at least partly fills the second region of the opening so that a lower surface of the bond metal stack is above a top surface of the p-type semiconductor layer.