Abstract: Dual mobility hip prosthesis has a liner rim that recessed with respect to an acetabular cup rim thereof so that an adjacent contact surface of the neck impinges the acetabular cup rim at extreme positions without impinging the liner rim. Furthermore, the acetabular cup rim defines an inner contact face correspondingly angled to the adjacent contact surface of the neck at the extreme positions to reduce point contact loading between the acetabular cup rim and the adjacent contact surface of the neck. As such the present prosthesis tolerates prosthetic impingement between the rim of the acetabular cup and the neck of the femoral component by mitigating against point contact loading force whilst eliminating impingement of edges of the polymeric liner between an edge of the neck and the rim of the acetabular cup and also allowing for sufficiently deep acetabular componentry with reduced likelihood of dislocation.

Abstract: A method of subtitling comprises the steps of obtaining an audio file of dialogue in a first language, obtaining a file of script text corresponding to the dialogue in the audio file in the same first language, determining a timing correspondence between dialogue in the audio file and words in the script text, detecting at least a first pause during performance of the dialogue in the audio file, defining a respective breakable point in the script text corresponding to the or each detected pause, and dividing the script text out into a sequence of subtitle lines of text responsive to the location of one or more of the defined breakable points.

Abstract: A method of subtitling comprises the steps of obtaining an audio file of dialogue in a first language, obtaining a file of script text corresponding to the dialogue in the audio file in the same first language, determining a timing correspondence between dialogue in the audio file and words in the script text, detecting at least a first pause during performance of the dialogue in the audio file, defining a respective breakable point in the script text corresponding to the or each detected pause, and dividing the script text out into a sequence of subtitle lines of text responsive to the location of one or more of the defined breakable points.

Abstract: The present invention relates to ion sources (14) comprising a cathode (20) and a counter-cathode (44) that are suitable for ion implanters (10). Typically, the ion source is held under vacuum and produces ions using a plasma generated within an arc chamber (16). Plasma ions are extracted from the arc chamber and subsequently implanted in a semiconductor wafer (12). The ion source according to the present invention further comprises a cathode (40) arranged to emit electrons into the arc chamber; an electrode (44) positioned in the arc chamber such that electrons emitted by the cathode are incident thereon; one or more voltage potential sources (76) arranged to bias the electrode; and a voltage potential adjuster (82) operable to switch between the voltage potential source biasing the electrode positively thereby to act as an anode and the voltage potential source biasing the electrode negatively thereby to act as a counter-cathode.

Abstract: The present invention relates to a front plate for an ion source that is suitable for an ion implanter. The front plate according to the invention comprises obverse and reverse sides, an exit aperture for allowing egress of ions from the ion source that extends substantially straight through the front plate between the obverse and reverse sides, and a slot penetrating through the front plate from obverse side to reverse side at a slant for at least part of its depth, the slot extending from a side of the front plate to join the exit aperture. The slot is slanted to occlude line of sight into the ion source when viewed from in front, yet provides an expansion gap.

Abstract: The present invention relates to a front plate for an ion source that is suitable for an ion implanter. The front plate according to the invention comprises obverse and reverse sides, an exit aperture for allowing egress of ions from the ion source that extends substantially straight through the front plate between the obverse and reverse sides, and a slot penetrating through the front plate from obverse side to reverse side at a slant for at least part of its depth, the slot extending from a side of the front plate to join the exit aperture. The slot is slanted to occlude line of sight into the ion source when viewed from in front, yet provides an expansion gap.

Abstract: A method of tuning an ion beam in an ion implanter relative to, e.g., ion beam current, energy, size and shape, includes retrieving a set of parameters associated with operation of the ion implanter, at least some of which are stored in a dynamic database, configuring the ion implanter according to the retrieved set of parameters, to thereby provide an ion beam, optimizing the ion beam by varying one or more of the parameters, and updating the parameters stored in the dynamic database which changed during optimization.

Abstract: The present invention relates to a front plate for an ion source that is suitable for an ion implanter. The front plate according to the invention comprises obverse and reverse sides, an exit aperture for allowing egress of ions from the ion source that extends substantially straight through the front plate between the obverse and reverse sides, and a slot penetrating through the front plate from obverse side to reverse side at a slant for at least part of its depth, the slot extending from a side of the front plate to join the exit aperture. The slot is slanted to occlude line of sight into the ion source when viewed from in front, yet provides an expansion gap.

Abstract: The present invention relates to ion sources (14) comprising a cathode (20) and a counter-cathode (44) that are suitable for ion implanters (10). Typically, the ion source is held under vacuum and produces ions using a plasma generated within an arc chamber (16). Plasma ions are extracted from the arc chamber and subsequently implanted in a semiconductor wafer (12). The ion source according to the present invention further comprises a cathode (40) arranged to emit electrons into the arc chamber; an electrode (44) positioned in the arc chamber such that electrons emitted by the cathode are incident thereon; one or more voltage potential sources (76) arranged to bias the electrode; and a voltage potential adjuster (82) operable to switch between the voltage potential source biasing the electrode positively thereby to act as an anode and the voltage potential source biasing the electrode negatively thereby to act as a counter-cathode.

Abstract: This invention relates to a method of producing B2H6 (diborane) in semiconductor wafer processing apparatus. In particular, although not exclusively, this invention relates to producing a dopant gas species containing a desired dopant element, and then producing dopant ions for implanting in semiconductor wafers using an ion implanter. The present invention provides such a method by passing a flow of a boron containing gas such as BF3 over a hydrogen containing solid such as NaH thereby forming an outflow of B2H6.

Abstract: The present invention relates to novel marker sequences that are differentially expressed in cancer cells or tissue of a subject with cancerous conditions. The present invention also relates to assays for diagnosis, prognosis, staging, monitoring, therapeutic treatment, and marker sequence related agents including probes, primers, antibodies, and therapeutic compositions.

Abstract: The present invention relates to a method of tuning an ion beam in an ion implanter such as may be used in the manufacture of semiconductor devices. There are many operational parameters associated with operation of the ion implanter that influence the ion beam that reaches the wafer. Controlling these parameters allows the ion beam to be tuned to provide an optimum ion beam current, energy, size and shape for a any particular implant. The present invention provides a method of tuning an ion beam comprising: retrieving a set of parameters at least some of which are stored in a dynamic database; configuring the ion implanter according to the retrieved set of parameters thereby to provide an ion beam; optimising the ion beam by varying one or more of the parameters; and updating the parameters stored in the dynamic database that changed during optimisation.

Abstract: The present invention relates to a front plate for an ion source that is suitable for an ion implanter. The front plate according to the invention comprises obverse and reverse sides, an exit aperture for allowing egress of ions from the ion source that extends substantially straight through the front plate between the obverse and reverse sides, and a slot penetrating through the front plate from obverse side to reverse side at a slant for at least part of its depth, the slot extending from a side of the front plate to join the exit aperture. The slot is slanted to occlude line of sight into the ion source when viewed from in front, yet provides an expansion gap.

Abstract: The present invention relates to novel marker sequences that are differentially expressed in cancer cells or tissue of a subject with cancerous conditions. The present invention also relates to assays for diagnosis, prognosis, staging, monitoring, therapeutic treatment, and marker sequence related agents including probes, primers, antibodies, and therapeutic compositions.

Abstract: This invention relates to novel nucleic acid sequences which are differentially expressed in cancer cells. The invention also relates to proteins and peptides encoded by the sequences, to diagnostic assays and therapeutic agents based on the sequences and proteins, and to probes, antisense constructs, and antibodies derived from the sequences and proteins or peptides. The subject nucleic acids have been found to be differentially expressed by tumor cells, particularly in colon cancer tissue.

Abstract: Provided is an ion implanter having a deceleration lens assembly comprising a plurality of electrodes in which one or more of the apertures of the deceleration electrodes are shaped in a manner which can improve performance of the ion implanter. In one embodiment, an electrode aperture is generally elliptical in shape and conforms generally to the shape of the beam passing through the aperture. In another aspect, an axis segment extends 40% of the length of the aperture from the aperture center to an intermediate point at the end of the segment. The average width of the aperture measured at each point from the center to the intermediate point is substantially less than the maximum width of the aperture.

Abstract: The present invention relates to nucleic acid sequences which are overexpressed in colorectal tumors which display a high level of microsatellite instability (MSI-H) vs. tumors displaying a low level of microsatellite instability (MSS), and can thus be used to identify MSI-H in a patient, and be used further to facilitate patient prognosis, monitor disease progression/regression, identify appropriate treatment regimes, and evaluate the efficacy of treatment.

Abstract: Provided is an ion implanter having a deceleration lens assembly comprising a plurality of electrodes in which one or more of the apertures of the deceleration electrodes are shaped in a manner which can improve performance of the ion implanter. In one embodiment, an electrode aperture is generally elliptical in shape and conforms generally to the shape of the beam passing through the aperture. In another aspect, an axis segment extends 40% of the length of the aperture from the aperture center to an intermediate point at the end of the segment. The average width of the aperture measured at each point from the center to the intermediate point is substantially less than the maximum width of the aperture.

Abstract: G2 electrode is mounted so as to be movable along the beam line and, optionally, perpendicular to it as well. G1 and G2 are curved with a constant gap between G1 and G2 in the radial direction (so that the two electrodes are concentric). This contrasts with the prior art where G1 and G2 were equidistantly spaced along the beam line direction instead. G1 is made re-entrant adjacent the slit so as to improve extraction efficiency from the plasma. Finally, a lens such as a quadrupole lens is formed downstream of G3.

Abstract: G2 electrode is mounted so as to be movable along the beam line and, optionally, perpendicular to it as well. G1 and G2 are curved with a constant gap between G1 and G2 in the radial direction (so that the two electrodes are concentric). This contrasts with the prior art where G1 and G2 were equidistantly spaced along the beam line direction instead. G1 is made re-entrant adjacent the slit so as to improve extraction efficiency from the plasma. Finally, a lens such as a quadrupole lens is formed downstream of G3.