Abstract: A laser imager for a printing system, comprising a plurality of independently addressable surface emitting lasers arranged in a linear array on a common substrate chip and including a common cathode and a dedicated control channel associated with an address trace line for each laser of the plurality of independently addressable surface emitting lasers, and optical elements arranged in a linear lens array configured to capture and focus light from the plurality of independently addressable surface emitting lasers onto a imaging member, wherein the plurality of independently addressable surface emitting lasers arranged in a linear array and the optical elements arranged in a linear lens array operate together to image the imaging member.

Abstract: A laser imager for a printing system, comprising a plurality of independently addressable surface emitting lasers arranged in a linear array on a common substrate chip and including a common cathode and a dedicated control channel associated with an address trace line for each laser of the plurality of independently addressable surface emitting lasers, and optical elements arranged in a linear lens array configured to capture and focus light from the plurality of independently addressable surface emitting lasers onto a imaging member, wherein the plurality of independently addressable surface emitting lasers arranged in a linear array and the optical elements arranged in a linear lens array operate together to image the imaging member.

Abstract: A computer adapted to convert images into raw data can provide the raw data to a control interface adapted to transmit the raw data with timing information to an electronic driver circuit. The electronic driver circuit can convert the raw data with the timing information provided by a control interface into regulated current signals provided to the semiconductor laser array at 300 dpi and higher. The semiconductor array can convert the current signals into light to illuminate an imaging member. The laser array can comprise vertical cavity surface emitting lasers providing imaging greater than 300 dpi. Each semiconductor laser can operate at 50 mW or greater.

Abstract: A method of transferring a semiconductor epi layer onto a metal host substrate is described. An epi layer of a semiconductor chip (e.g., semiconductor laser array) including a substrate can be mounted onto a planar handle wafer with an adhesive, wherein a backside of the substrate faces upward and away from the epi layer and the planar handle wafer. The backside of the substrate can be treated to substantially remove the substrate, while leaving the epi layer undamaged (e.g., by polishing to where no more than 20 micrometers of the substrate remains). Metal can be formed on the treated backside resulting in a metalized backside. The planar handle wafer can then be removed from the epi layer by dissolving the adhesive with a solvent, wherein a modified semiconductor chip remains. The semiconductor chip can be annealed to form a backside ohmic contact interface. The semiconductor chip can then be attached to a mechanical block by the ohmic contact interface.

Abstract: A semiconductor surface-emitting laser array can be provided with a group of independently addressable light-emitting pixels arranged in at least two rows and in a linear array on a common substrate chip and including a common cathode and a dedicated channel associated with an address trace line for each pixel. An aggregate linear pitch can be achieved between pixels of the at least two rows along the linear array in a cross process direction that is less than the size of a pixel. The semiconductor laser array can include more than one common substrate chip tiled and stitched together in a staggered arrangement to provide an at least 11-inch wide, 1200pdi imager with timing delays associated with each of the more than one common substrate chip in the staggered arrangement.

Abstract: A 3D package for semiconductor thermal management can include a 3D submount forming a mechanical block including at least one embedded channel formed within the mechanical block and configured to accept cooling liquid therethrough, a first tubular connection for providing cooling liquid to the at least one embedded channel, and a second tubular connection for removing cooling liquid from the at least one embedded channel. Integrated slots can be provided for accepting and mounting semiconductor components. Mounting holes can be formed in the mechanical block for securing optical elements. At least one semiconductor laser array die can be secured to the mechanical block at the integrated slots, wherein the at least one semiconductor laser array die is kept cool by the cooling liquid flowing through the at least one embedded channel.

Abstract: Light emitting devices having an enhanced degree of polarization, PD, and methods for fabricating such devices are described. A light emitting device may include a light emitting region that is configured to emit light having a central wavelength, ?, and a degree of polarization, PD, where PD>0.006??b for 200 nm???400 nm, wherein b?1.5.

Abstract: A method of electroplating includes forming a seed region to be electroplated on a first portion of a substrate, forming a ground plane on a second portion of a substrate, electrically isolating the ground plane from the seed region, electroplating the region, wherein electroplating includes causing the ground plane and the region to make electrical connection, and then removing the ground plane region on the second portion of the substrate, but not removing the electrical isolation. This creates a structure having a substrate, a passivation layer on the substrate, and at least one electroplated, metal region on the substrate such that there is contiguous contact between the metal region and the passivation layer. And, after an additional flip-chip assembly to a bond pad/heat sinking chip, results in a device having a bond pad chip having bond pads, solder beads formed on the bond pads, and a component connected to the bond pads by the solder beads.

Abstract: A printing plate has a substrate, an array of cells on the substrate, wherein each cell corresponds to an element of a print image, a deformable polymer material localized into the cells such that each cell is at least partially formed from the deformable polymer material, a reservoir corresponding to each cell to collect the deformable polymer material as needed when the deformable polymer material is one of either melted or softened, and a heater to cause the deformable polymer material to either melt or soften.

Abstract: A method of electroplating includes forming a seed region to be electroplated on a first portion of a substrate, forming a ground plane on a second portion of a substrate, electrically isolating the ground plane from the seed region, electroplating the region, wherein electroplating includes causing the ground plane and the region to make electrical connection, and then removing the ground plane region on the second portion of the substrate, but not removing the electrical isolation. This creates a structure having a substrate, a passivation layer on the substrate, and at least one electroplated, metal region on the substrate such that there is contiguous contact between the metal region and the passivation layer. And, after an additional flip-chip assembly to a bond pad/heat sinking chip, results in a device having a bond pad chip having bond pads, solder beads formed on the bond pads, and a component connected to the bond pads by the solder beads.

Abstract: A method of electroplating includes forming a seed region to be electroplated on a first portion of a substrate, forming a ground plane on a second portion of a substrate, electrically isolating the ground plane from the seed region, electroplating the region, wherein electroplating includes causing the ground plane and the region to make electrical connection, and then removing the ground plane region on the second portion of the substrate, but not removing the electrical isolation. This creates a structure having a substrate, a passivation layer on the substrate, and at least one electroplated, metal region on the substrate such that there is contiguous contact between the metal region and the passivation layer. And, after an additional flip-chip assembly to a bond pad/heat sinking chip, results in a device having a bond pad chip having bond pads, solder beads formed on the bond pads, and a component connected to the bond pads by the solder beads.

Abstract: A method and structure for forming a spring structure that avoids undesirable kinks in the spring is described. The method converts a portion of a release layer such that the converted portion resists etching. The converted portion then serves as an anchor region for a spring structure deposited over the release layer. When the non-converted portions of the release layer are etched, the spring curls out of the plane of a plane.

Abstract: A Vertical Cavity Surface Emitting Laser (VCSEL) assembly including a VCSEL structure having a light-emitting region located on its surface, a relatively wettable region of a surface modifier coating formed over the light emitting region, and a microlens formed on the relatively wettable region. A relatively non-wettable region of the surface modifier coating is formed around the light-emitting region (e.g., on the electrode surrounding the light-emitting region). The surface modifier coating is formed, for example, from one or more organothiols that change the surface energies of the light-emitting region and/or the electrode to facilitate self-assembly and self-registration of the microlens material. The microlens material is printed, microjetted, or dip coated onto the VCSEL structure such that the microlens material wets to the relatively wettable region, thereby forming a liquid bead that is reliably positioned over the light-emitting region. The liquid bead is then cured to form the microlens.

Abstract: A structure has at least one structure component formed of a first material residing on a substrate, such that the structure is out of a plane of the substrate. A first coating of a second material then coats the structure. A second coating of a non-oxidizing material coats the structure at a thickness less than a thickness of the second material.

Abstract: A contact spring applicator is provided which includes an applicator substrate, a removable encapsulating layer and a plurality of contact springs embedded in the removable encapsulating layer. The contact springs are positioned such that a bond pad on each contact spring is adjacent to an upper surface of the removable encapsulating layer. The contact spring applicator may also include an applicator substrate, a release layer, a plurality of unreleased contact springs on the release layer and a bond pad at an anchor end of each contact spring. The contact spring applicators apply contact springs to an integrated circuit chip, die or package or to a probe card by aligning the bond pads with bond pad landings on the receiving device. The bond pads are adhered to the bond pad landings. The encapsulating or release layer is then removed to separate the contact springs from the contact spring applicator substrate.

Abstract: A method of avoiding device failure caused by facet heating is described. The method is particularly applicable to a semiconductor laser. In the method, a semiconductor laser facet including GaAsN is hydrogenated such that the bandgap within the facet is greater than the bandgap in the active region of the InGaAsN laser. The increased bandgap reduces absorption of light in the facet and the associated heating that results.

Abstract: A method and structure for integrating many optical devices on a single wafer is described. The method fabricates passive interconnect devices using hydrogenation techniques. Lateral optical confinement is achieved by hydrogenating regions laterally adjacent to the waveguide core. Vertical optical confinement is adjusted by careful control of the hydrogen content of the waveguide core itself.

Abstract: A method and structure for adjusting the wavelength output of a semiconductor device is described. In the method, the hydrogen concentration in an active region of the semiconductor device is adjusted either during fabrication or after the device has been fabricated. The adjustment provides a simple technique for fine tuning many device types including regular lasers and VCSEL structures. The adjustment also allows for mass production of lasers of many different frequencies on a single wafer substrate, a system particularly desirable for wavelength division multiplexing systems.

Abstract: A method and structure for laterally index guiding is described. In the method, lateral areas around the a semiconductor device active region are exposed to hydrogen. The hydrogen adjusts the index of refraction surrounding the laser active region helping to confine both the electrical carriers and the generated light to the laser active region.

Abstract: A method and structure for forming a spring structure that avoids undesirable kinks in the spring is described. The method converts a portion of a release layer such that the converted portion resists etching. The converted portion then serves as an anchor region for a spring structure deposited over the release layer. When the non-converted portions of the release layer are etched, the spring curls out of the plane of a plane.