Abstract: A portable radiation detector using a high-purity germanium crystal as the sensing device. The crystal is fabricated such that it exhibits a length to width ratio greater than 1:1 and is oriented within the detector to receive radiation along the width of said crystal. The crystal is located within a container pressurized with ultra-pure nitrogen, and the container is located within a cryostat under vacuum.

Abstract: A self-aligned process for fabricating a non-volatile memory cell having two isolated floating gates. The process includes forming a gate dielectric layer over a semiconductor substrate. A floating gate layer is then formed over the gate dielectric layer. A disposable layer is formed over the floating gate layer, and patterned to form a disposable mask having a minimum line width. Sidewall spacers are formed adjacent to the disposable mask, and source/drain regions are implanted in the substrate, using the disposable mask and the sidewall spacers as an implant mask. The disposable mask is then removed, and the floating gate layer is etched through the sidewall spacers, thereby forming a pair of floating gate regions. The sidewall spacers are removed, and an oxidation step is performed, thereby forming an oxide region that surrounds the floating gate regions. A control gate is then formed over the oxide region.

Abstract: A self-aligned process for fabricating a non-volatile memory cell having two isolated floating gates. The process includes forming a gate dielectric layer over a semiconductor substrate. A floating gate layer is then formed over the gate dielectric layer. A disposable layer is formed over the floating gate layer, and patterned to form a disposable mask having a minimum line width. Sidewall spacers are formed adjacent to the disposable mask, and source/drain regions are implanted in the substrate, using the disposable mask and the sidewall spacers as an implant mask. The disposable mask is then removed, and the floating gate layer is etched through the sidewall spacers, thereby forming a pair of floating gate regions. The sidewall spacers are removed, and an oxidation step is performed, thereby forming an oxide region that surrounds the floating gate regions. A control gate is then formed over the oxide region.