Patents by Inventor Christopher Cowen

Christopher Cowen has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 9862329
    Abstract: Apparatus and methods according to various aspects of the present technology may comprise a housing connected to one or more articulating arms. The housing may have a receiving section, such as a holster, for receiving an item for storage. The articulating arms may position the housing in a concealed location and then on command reposition the housing in a more readily accessible location so that the item may be retrieved.
    Type: Grant
    Filed: February 23, 2017
    Date of Patent: January 9, 2018
    Assignee: Fesler Holdings, LLC
    Inventors: Christopher Fesler, Christopher Cowen
  • Publication number: 20170240117
    Abstract: Apparatus and methods according to various aspects of the present technology may comprise a housing connected to one or more articulating arms. The housing may have a receiving section, such as a holster, for receiving an item for storage. The articulating arms may position the housing in a concealed location and then on command reposition the housing in a more readily accessible location so that the item may be retrieved.
    Type: Application
    Filed: February 23, 2017
    Publication date: August 24, 2017
    Inventors: Christopher Fesler, Christopher Cowen
  • Patent number: 8317944
    Abstract: One or more embodiments relates to a high-temperature, titanium alloyed, 9 Cr-1 Mo steel exhibiting improved creep strength and oxidation resistance at service temperatures up to 650° C. The 9 Cr-1 Mo steel has a tempered martensite microstructure and is comprised of both large (0.5-3 ?m) primary titanium carbides and small (5-50 nm) secondary titanium carbides in a ratio of. from about 1:1.5 to about 1.5:1. The 9 Cr-1 Mo steel may be fabricated using exemplary austenizing, rapid cooling, and tempering steps without subsequent hot working requirements. The 9 Cr-1 Mo steel exhibits improvements in total mass gain, yield strength, and time-to-rupture over ASTM P91 and ASTM P92 at the temperature and time conditions examined.
    Type: Grant
    Filed: October 26, 2011
    Date of Patent: November 27, 2012
    Assignee: U.S. Department of Energy
    Inventors: Paul D. Jablonski, David Alman, Omer Dogan, Gordon Holcomb, Christopher Cowen
  • Patent number: 8246767
    Abstract: The invention relates to a composition and heat treatment for a high-temperature, titanium alloyed, 9 Cr-1 Mo steel exhibiting improved creep strength and oxidation resistance at service temperatures up to 650° C. The novel combination of composition and heat treatment produces a heat treated material containing both large primary titanium carbides and small secondary titanium carbides. The primary titanium carbides contribute to creep strength while the secondary titanium carbides act to maintain a higher level of chromium in the finished steel for increased oxidation resistance, and strengthen the steel by impeding the movement of dislocations through the crystal structure. The heat treated material provides improved performance at comparable cost to commonly used high-temperature steels such as ASTM P91 and ASTM P92, and requires heat treatment consisting solely of austenization, rapid cooling, tempering, and final cooling, avoiding the need for any hot-working in the austenite temperature range.
    Type: Grant
    Filed: September 12, 2008
    Date of Patent: August 21, 2012
    Assignee: The United States of America, as represented by the United States Department of Energy
    Inventors: Paul D. Jablonski, David Alman, Omer Dogan, Gordon Holcomb, Christopher Cowen
  • Publication number: 20070015373
    Abstract: A method of processing a semiconductor substrate is provided. The method includes depositing an amorphous hydrogenated carbon film on a semiconductor substrate using a low temperature plasma deposition process and performing at least one high temperature processing step on the semiconductor substrate. The SiC substrate is processed by ion implanting at least one dopant species into at least one selected region of the SiC substrate, depositing a amorphous hydrogenated carbon film on the SiC substrate using a plasma enhanced chemical vapor deposition (PECVD) process, performing at least one high temperature processing step on the SiC substrate and removing the amorphous hydrogenated carbon film after performing the high temperature processing step.
    Type: Application
    Filed: July 13, 2005
    Publication date: January 18, 2007
    Inventors: Christopher Cowen, Larry Rowland, Jesse Tucker, Jeffrey Fedison, Richard Saia, Kevin Durocher