Patents by Inventor Christopher D. Cardon

Christopher D. Cardon has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 10608048
    Abstract: The present disclosure includes select devices and methods of using select device for memory cell applications. An example select device includes a first electrode having a particular geometry, a semiconductor material formed on the first electrode and a second electrode having the particular geometry with formed on the semiconductor material, wherein the select device is configured to snap between resistive states in response to signals that are applied to the select device.
    Type: Grant
    Filed: September 6, 2018
    Date of Patent: March 31, 2020
    Assignee: Micron Technology, Inc.
    Inventors: David H. Wells, Christopher D. Cardon, Caner Onal
  • Publication number: 20190006420
    Abstract: The present disclosure includes select devices and methods of using select device for memory cell applications. An example select device includes a first electrode having a particular geometry, a semiconductor material formed on the first electrode and a second electrode having the particular geometry with formed on the semiconductor material, wherein the select device is configured to snap between resistive states in response to signals that are applied to the select device.
    Type: Application
    Filed: September 6, 2018
    Publication date: January 3, 2019
    Inventors: David H. Wells, Christopher D. Cardon, Caner Onal
  • Patent number: 10109677
    Abstract: The present disclosure includes select devices and methods of using select device for memory cell applications. An example select device includes a first electrode having a particular geometry, a semiconductor material formed on the first electrode and a second electrode having the particular geometry with formed on the semiconductor material, wherein the select device is configured to snap between resistive states in response to signals that are applied to the select device.
    Type: Grant
    Filed: August 1, 2017
    Date of Patent: October 23, 2018
    Assignee: Micron Technology, Inc.
    Inventors: David H. Wells, Christopher D. Cardon, Caner Onal
  • Publication number: 20170358627
    Abstract: The present disclosure includes select devices and methods of using select device for memory cell applications. An example select device includes a first electrode having a particular geometry, a semiconductor material formed on the first electrode and a second electrode having the particular geometry with formed on the semiconductor material, wherein the select device is configured to snap between resistive states in response to signals that are applied to the select device.
    Type: Application
    Filed: August 1, 2017
    Publication date: December 14, 2017
    Inventors: David H. Wells, Christopher D. Cardon, Caner Onal
  • Patent number: 9735200
    Abstract: The present disclosure includes select devices and methods of using select device for memory cell applications. An example select device includes a first electrode having a particular geometry, a semiconductor material formed on the first electrode and a second electrode having the particular geometry with formed on the semiconductor material, wherein the select device is configured to snap between resistive states in response to signals that are applied to the select device.
    Type: Grant
    Filed: July 21, 2016
    Date of Patent: August 15, 2017
    Assignee: Micron Technology, Inc.
    Inventors: David H. Wells, Christopher D. Cardon, Caner Onal
  • Publication number: 20160329377
    Abstract: The present disclosure includes select devices and methods of using select device for memory cell applications. An example select device includes a first electrode having a particular geometry, a semiconductor material formed on the first electrode and a second electrode having the particular geometry with formed on the semiconductor material, wherein the select device is configured to snap between resistive states in response to signals that are applied to the select device.
    Type: Application
    Filed: July 21, 2016
    Publication date: November 10, 2016
    Inventors: David H. Wells, Christopher D. Cardon, Caner Onal
  • Patent number: 9425390
    Abstract: The present disclosure includes select devices and methods of using select device for memory cell applications. An example select device includes a first electrode having a particular geometry, a semiconductor material formed on the first electrode and a second electrode having the particular geometry with formed on the semiconductor material, wherein the select device is configured to snap between resistive states in response to signals that are applied to the select device.
    Type: Grant
    Filed: October 16, 2014
    Date of Patent: August 23, 2016
    Assignee: Micron Technology, Inc.
    Inventors: David H. Wells, Christopher D. Cardon, Caner Onal
  • Publication number: 20160111639
    Abstract: The present disclosure includes select devices and methods of using select device for memory cell applications. An example select device includes a first electrode having a particular geometry, a semiconductor material formed on the first electrode and a second electrode having the particular geometry with formed on the semiconductor material, wherein the select device is configured to snap between resistive states in response to signals that are applied to the select device.
    Type: Application
    Filed: October 16, 2014
    Publication date: April 21, 2016
    Inventors: David H. Wells, Christopher D. Cardon, Caner Onal