Abstract: A communication device includes a power amplifier that generates power signals according to one or more operating bands of communication data, with the amplitude being driven and generated in output stages of the power amplifier. The final stage can include an output passive network that suppresses suppress an amplitude modulation-to-phase modulation (AM-PM) distortion. During a back-off power mode a bias of a capacitive unit of the output power network component can be adjusted to minimize an overall capacitance variation. An output passive network can further generate a flat-phase response between dual resonances of operation.

Abstract: Various devices, systems, and/or methods perform wireless chip to chip high speed data transmission. Strategies for such transmission include use of improved microbump antennas, wireless chip to chip interconnects, precoding and decoding strategies, channel design to achieve spatial multiplexing gain in line of sight transmissions, open cavity chip design for improved transmission, and/or mixed signal channel equalization.

Abstract: A communication device includes a power amplifier that generates power signals according to one or more operating bands of communication data, with the amplitude being driven and generated in output stages of the power amplifier. The final stage can include an output passive network that suppresses suppress an amplitude modulation-to-phase modulation (AM-PM) distortion. During a back-off power mode a bias of a capacitive unit of the output power network component can be adjusted to minimize an overall capacitance variation. An output passive network can further generate a flat-phase response between dual resonances of operation.

Abstract: A communication device includes a power amplifier that generates power signals according to one or more operating bands of communication data, with the amplitude being driven and generated in output stages of the power amplifier. The final stage can include an output passive network that suppresses suppress an amplitude modulation-to-phase modulation (AM-PM) distortion. During a back-off power mode a bias of a capacitive unit of the output power network component can be adjusted to minimize an overall capacitance variation. A output passive network can further generate a flat-phase response between dual resonances of operation.

Abstract: Various aspects provide a transceiver and a communication device including the transceiver. In an example, the transceiver includes an amplifier circuit including an amplifier stage with an adjustable degeneration component, the amplifier stage configured to amplify a received input signal with an adjustable gain, an adjustable feedback component coupled to the amplifier stage; and a controller coupled to the amplifier stage and to the adjustable feedback component and configured to adjust the adjustable feedback component based on an adjustment of the adjustable degeneration component.

Abstract: Various aspects of this disclosure provide a receiver. The receiver may include a down-converter configured to down-convert a received communication signal at a predefined carrier frequency, with a reference signal received from a reference signal generator, and a processor configured to perform a signal quality detection to identify a signal quality metric of the received communication signal at the predefined carrier frequency, and to provide a frequency adjusting signal to the reference signal generator to change the frequency of the reference signal based on the performed signal quality detection to identify the signal quality metric of the received communication signal at the predefined carrier frequency.

Abstract: A communication device includes a power amplifier that generates power signals according to one or more operating bands of communication data, with the amplitude being driven and generated in output stages of the power amplifier. The final stage can include an output passive network that suppresses suppress an amplitude modulation-to-phase modulation (AM-PM) distortion. During a back-off power mode a bias of a capacitive unit of the output power network component can be adjusted to minimize an overall capacitance variation. A output passive network can further generate a flat-phase response between dual resonances of operation.

Abstract: A communication device includes a power amplifier that generates power signals according to one or more operating bands of communication data, with the amplitude being driven and generated in output stages of the power amplifier. The final stage can include an output passive network that suppresses suppress an amplitude modulation-to-phase modulation (AM-PM) distortion. During a back-off power mode a bias of a capacitive unit of the output power network component can be adjusted to minimize an overall capacitance variation. A output passive network can further generate a flat-phase response between dual resonances of operation.

Abstract: A communication device includes a power amplifier that generates power signals according to one or more operating bands of communication data, with the amplitude being driven and generated in output stages of the power amplifier. The final stage can include an output passive network that suppresses suppress an amplitude modulation-to-phase modulation (AM-PM) distortion. During a back-off power mode a bias of a capacitive unit of the output power network component can be adjusted to minimize an overall capacitance variation. A output passive network can further generate a flat-phase response between dual resonances of operation.

Abstract: A communication device includes a power amplifier that generates power signals according to one or more operating bands of communication data, with the amplitude being driven and generated in output stages of the power amplifier. The final stage can include an output passive network that suppresses suppress an amplitude modulation-to-phase modulation (AM-PM) distortion. During a back-off power mode a bias of a capacitive unit of the output power network component can be adjusted to minimize an overall capacitance variation. A output passive network can further generate a flat-phase response between dual resonances of operation.

Abstract: A communication device includes a power amplifier that generates power signals according to one or more operating bands of communication data, with the amplitude being driven and generated in output stages of the power amplifier. The final stage can include an output passive network that suppresses suppress an amplitude modulation-to-phase modulation (AM-PM) distortion. During a back-off power mode a bias of a capacitive unit of the output power network component can be adjusted to minimize an overall capacitance variation. A output passive network can further generate a flat-phase response between dual resonances of operation.

Abstract: A communication device includes a power amplifier that generates power signals according to one or more operating bands of communication data, with the amplitude being driven and generated in output stages of the power amplifier. The final stage can include an output passive network that suppresses an amplitude modulation-to-phase modulation (AM-PM) distortion. During a back-off power mode a bias of a capacitive unit of the output power network component can be adjusted to minimize an overall capacitance variation. The output passive network can further generate a flat-phase response between dual resonances of operation.

Abstract: A communication device includes a power amplifier that generates power signals according to one or more operating bands of communication data, with the amplitude being driven and generated in output stages of the power amplifier. The final stage can include an output passive network that suppresses suppress an amplitude modulation-to-phase modulation (AM-PM) distortion. During a back-off power mode a bias of a capacitive unit of the output power network component can be adjusted to minimize an overall capacitance variation. A output passive network can further generate a flat-phase response between dual resonances of operation.

Abstract: A novel trench isolated guard ring region for providing RF isolation is disclosed. The semiconductor integrated circuit (IC) device of the present invention comprises a substrate, an insulating layer formed on the substrate, a buried layer formed on the insulating layer, and an epitaxial layer of a first conductivity type formed on the buried layer. A first isolation trench is formed in the epitaxial layer and the buried layer that extends to the insulating layer and that surrounds a first selected surface area of the epitaxial layer. A second isolation trench is formed in the epitaxial layer and the buried layer that extends to the insulating layer and that surrounds the first isolation trench and defines a guard ring region between itself and the first isolation trench. A plurality of isolation chambers is formed within the first and second isolation trenches. A collector is implanted into the epitaxial layer in the guard ring region.

Abstract: An integrated circuit inductor structure that includes a shielding pattern that induces a plurality of small eddy currents to shield the magnetic energy generated by the inductor from the substrate of the IC. The IC inductor structure is formed on a Silicon on Insulator (SOI) substrate where the substrate of the SOI has high resistivity. The shielding pattern forms a checkerboard pattern that includes a plurality of conducting regions completely isolated from each other by oxide material. The inductor has a high quality factor and a high self-resonance frequency due to the effective shielding of electromagnetic energy from the substrate of the IC while not reducing the effective inductance of the inductor.

Abstract: Integrated circuit varactor structures that include either an P-gate/N-well or N-gate/P-well layer configuration formed on an SOI substrate. The varactor structure is completely electrically isolated from the substrate of the IC by an oxide layer of the SOI substrate and by oxide-filled trenches formed on both sides of the varactor structures. The isolation trenches preferably extend to the oxide layer of the SOI substrate. The P-gate/N-well varactor structure includes N+ implant regions formed in an N-well implant layer of the varactor. The N+ implant regions comprise the source and the drain of a varactor. A LOCOS layer may be formed over the N-well layer where the P-gate is formed over the LOCOS layer. The P-gate may be formed of polysilicon. The N-gate/P-well varactor structure includes P+ implant regions formed in a P-well implant layer of the varactor. The P+ implant regions comprise the source and the drain of a varactor.