Abstract: A battery cell stack assembly for a prismatic battery includes a plurality of monocells and two current collector bracket assemblies. Each monocell includes an anode electrode sheet having an outer perimeter and an anode cell tab and a cathode electrode sheet having a cathode cell tab. One of the current collector bracket assemblies electrically connect each of the anode cell tabs with one another and a remaining current collector bracket assembly electrically connects each of the cathode cell tabs with one another, and each current collect bracket assembly includes at least one arm that is positioned to electrically connect either two or more of the anode cell tabs or two or more of the cathode cell tabs to one another.

Abstract: A bridging member extending across a cavity in a semiconductor substrate (e.g. signal crystal silicon) has successive layers--a masking layer, an electrically conductive layer (e.g. polysilicon) and an insulating layer (e.g. SiO.sub.2). A first electrical contact (e.g. gold coated with ruthenium) extends on the insulating layer in a direction perpendicular to the extension of the bridging member across the cavity. A pair of bumps (e.g. gold) are on the insulating layer each between the contact and one of the cavity ends. Initially the bridging member and then the contact and the bumps are formed on the substrate and then the cavity is etched in the substrate through holes in the bridging member. A pair of second electrical contacts (e.g. gold coated with ruthenium) are on the surface of an insulating substrate (e.g. pyrex glass) adjacent the semiconductor substrate. The two substrates are bonded after the contacts are cleaned.

Abstract: A bridging member extending across a cavity in a semiconductor substrate (e.g. single crystal silicon) has successive layers--a masking layer, an electrically conductive layer (e.g. polysilicon) and an insulating layer (e.g. SiO.sub.2). A first electrical contact (e.g. gold coated with ruthenium) extends on the insulating layer in a direction perpendicular to the extension of the bridging member across the cavity. A pair of bumps (e.g. gold) are on the insulating layer each between the contact and one of the cavity ends. Initially the bridging member and then the contact and the bumps are formed on the substrate and then the cavity is etched in the substrate through holes in the bridging member. A pair of second electrical contacts (e.g. gold coated with ruthenium) are on the surface of an insulating substrate (e.g. pyrex glass) adjacent the semiconductor substrate. The two substrates are bonded after the contacts are cleaned.

Abstract: A bridging member extending across a cavity in a semiconductor substrate (e.g. single crystal silicon) has successive layers--a masking layer, an electrically conductive layer (e.g. polysilicon) and an insulating layer (e.g. SiO.sub.2). A first electrical contact (e.g. gold coated with ruthenium) extends on the insulating layer in a direction perpendicular to the extension of the bridging member across the cavity. A pair of bumps (e.g. gold) are on the insulating layer each between the contact and one of the cavity ends. Initially the bridging member and then the contact and the bumps are formed on the substrate and then the cavity is etched in the substrate through holes in the bridging member. A pair of second electrical contacts (e.g. gold coated with ruthenium) are on the surface of an insulating substrate (e.g. pyrex glass) adjacent the semiconductor substrate. The two substrates are bonded after the contacts are cleaned.

Abstract: An assembly of intercoupled integrated circuit die comprises: a substrate having a plurality of holes which extend through the substrate; each hole is of a size that is suitable to receive an integrated circuit die; a plurality of independent subassemblies are also provided; each subassembly includes an integrated circuit die and a heat sink which is attached to the back of the die and extends beyond it; each subassembly is aligned with a respective hole in the substrate such that the die lies in the hole and the heat sink extends beyond the hole and attaches to the substrate; subassemblies are interconnected by printed conductors on the substrate and discrete wires that are bonded from the front of the die to the conductors; and the die and heat sink have similar thermal expansion coefficients, while the substrate has a substantially different thermal expansion coefficient.