Abstract: This invention relates to a method and apparatus for forming a film on the substrate. The method comprises supplying to the chamber in gaseous or vapor form a silicon containing organic compound and an oxidizing agent in the presence of a plasma to deposit a film on the substrate and setting the film such that carbon containing groups are retained therein. In particular embodiments the setting is achieved by exposing the film to H2 plasma.

Abstract: This invention relates to a method of heating an insulating layer, such as is found in semiconductor devices, in which a formation has been etched through a layer of resist comprising reactive etching the resist, inhibiting absorption of or removing water vapour and/or oxygen at the exposed surfaces of the etched formation and filling the formation with conductive metal in the absence of said water vapour and/or oxygen.

Abstract: This invention relates to a method of heating an insulating layer, such as is found in semiconductor devices, in which a formation has been etched through a layer of resist comprising reactive etching the resist, inhibiting absorption of or removing water vapour and/or oxygen at the exposed surfaces of the etched formation and filling the formation with conductive metal in the absence of said water vapour and/or oxygen.

Abstract: This invention relates to a method of heating an insulating layer, such as is found in semiconductor devices, in which a formation has been etched through a layer of resist comprising reactive etching the resist, inhibiting absorption of or removing water vapor and/or oxygen at the exposed surfaces of the etched formation and filling the formation with conductive metal in the absence of said water vapor and/or oxygen.

Abstract: The invention relates to a process for filling a multiplicity of recesses (3) formed in an exposed surface of a workpiece (1), wherein the mouths of the recesses (3) are closed by the deposition of a layer (10) and the layer is subjected to elevated temperature and pressure to force material from the layer down into the recesses. In the particular embodiments described, the elevated temperature is achieved by supplying very short thermal pulses, for example, from a light source such as a laser or a halogen light and preferably this thermal pulse is applied after the elevated pressure has been achieved.

Abstract: A semiconductor wafer is treated in a chamber by introducing into the chamber a silicon-containing gas or vapor and hydrogen peroxide in vapor form. The silicon-containing gas or vapor is reacted with the hydrogen peroxide to form a short chain, inorganic fluid polymer on the wafer, which thus forms a generally planar layer.

Abstract: To fill a hole or trench structure in an article, such as a semiconductor wafer, a layer is formed on the article. The layer extends over the structure so as to seal the mouth thereof. The layer may be deposited by sputtering, etc, or the layer may be deposited as a pre-formed foil. Then, the wafer and layer are subject to elevated pressure and elevated temperature such as to cause material of the layer to flow into the structure.

Abstract: This invention relates to methods of forming a barrier layer including depositing a layer of Titanium Nitride and subsequently nitriding the surface of that layer. In some embodiments the Titanium Nitride layer is exposed to Oxygen prior to the nitroding step.

Abstract: The invention consists in a method of filling recesses in a surface layer of a workpiece with conductive material including the steps of: forming a barrier layer on the surface; depositing a layer of conductive material on to the barrier layer; and forcing, flowing or drifting the conductive material into the recesses characterized in that the barrier layer includes Oxygen or is oxidized and oxidized material in the surface of the layer is nitrided prior to the deposition of the conductive material.

Abstract: A chamber includes a door which opens to introduce a workpiece into the chamber and which closes to enclose the workpiece within the chamber. A workpiece support is located within said chamber and supports the workpiece such that a coated surface of the workpiece faces in a given direction. A liquid supply mechanism floods the chamber with a liquid to immerse the workpiece support. A pressure pulse supply mechanism applies a pulse of pressure to the liquid such that the pulse of pressure is transmitted through the liquid in a direction opposite the given direction. The pulse of pressure is incident via the liquid on the coated surface of the workpiece supported by the workpiece support.

Abstract: A deposit layer is deposited on the exposed surface of a surface layer formed on a semiconductor wafer. The depositing of the deposit layer continues at least until the deposit layer extends over all the recesses to close completely the openings of all of the recesses to thereby form enclosed areas within the recesses which are devoid of a material of the deposit layer. After forming the enclosed areas within the recesses, the wafer and the deposit layer are then subjected to pressure and heat treatment sufficient to cause parts of the deposit layer to deform to fill the enclosed areas within the respective recesses.

Abstract: A wafer processing method relates to treating a semi-conductor wafer and in particular, but not exclusively, to planarization. The method consists of depositing a liquid short-chain polymer formed from a silicon containing gas or vapor. Subsequently water and OH are removed and the layer is stabilised.

Abstract: In a method of treating a semi-conductor wafer a short-chain polymer is deposited on the wafer to planarise surface features on the wafer and a diffusion layer is deposited on the surface of the polymer layer to allow moisture to be released from the polymer at a controlled rate.

Abstract: The invention relates to apparatus for use in a process in which a layer is formed on a surface of a workpiece and then forced into underlying voids. The apparatus for applying elevated pressure to the workpiece 1 comprises a chamber 103 (which includes a workpiece support 109a) means 108 for flooding the chamber 103 with liquid to immerse a workpiece 1 on the support 109a and means for applying a pulse of elevated pressure to the liquid and hence the workpiece. These means may include a liquid reservoir 102, which shares a common flexible wall 101 with the chamber 103, and electrodes 100 and 104 to which a high voltage pulse can be supplied to create a shock in the liquid of reservoir 102 which is transmitted to the liquid in 103 via the wall 101.