Abstract: An apparatus for receiving signals includes a low noise amplifier (LNA) configured to receive a radio frequency (RF) signal. An I/Q direct down converter is coupled to the LNA. The I/Q direct down converter is configured to split the RF signal into real and imaginary components and to down convert the real and imaginary components directly to baseband signals. A local oscillator (LO) is coupled to the I/Q direct down converter and is configured to drive the I/Q direct down converter. First and second filters are coupled to the I/Q direct down converter. The first and second filters are configured to filter the down converted real and imaginary components, respectively. First and second analog-to-digital converters (ADCs) are coupled to the first and second filters, respectively. The first and second ADCs are configured to convert the real and imaginary components into digital signals.

Abstract: A method and apparatus for fully integrating a Voltage Controlled Oscillator (VCO) on an integrated circuit. The VCO is implemented using a differential-mode circuit design. The differential-mode implementation of the VCO preferably comprises a differential mode LC-resonator circuit, a digital capacitor, a differential pair amplifier, and a current source. The LC-resonator circuit includes at least one tuning varactor and two high Q inductors. The tuning varactor preferably has a wide tuning capacitance range. The tuning varactor is only used to “fine-tune” the center output frequency f0 of the VCO. The center output frequency f0 is coarsely tuned by the digital capacitor. The VCO high Q inductors comprise high gain, high self-resonance, and low loss IC inductors. The IC VCO is fabricated on a high resistivity substrate material using a trench isolated guard ring.

Abstract: A method and apparatus for digitally controlling the capacitance of an integrated circuit device using MOS-FET devices. In accordance with one aspect of the present invention, a one-bit or “binary” varactor is presented wherein the gate-to-bulk capacitance of the MOS-FET device exhibits dependency to a D.C. voltage applied between its gate and well implant regions. The capacitance-voltage characteristic of the binary capacitor has three major regions: (1) a first relatively flat region having little or no voltage dependency and having a capacitance equal to a first low capacitance of C1; (2) a sloped region wherein a voltage dependency exists; and (3) a second relatively flat region where there is little or no voltage dependency and where the capacitance equals a second higher capacitance of C2. The capacitance of the binary capacitor can be changed from C1 to C2 simply by changing the polarity of the applied D.C. voltage from a positive to a negative value.